Calculations on the hyperfine constants of the ground states for lithium-like system

In this paper a relativistic many-body perturbation calculation is performed to calculate the hyperfine constants of the ground states for lithium-like isoelectronic sequence. Zeroth-order hyperfine constants are calculated with Dirac--Fock wavefunctions, and the finite basis sets of the Dirac--Fock equations are constructed by B splines. With the finite basis sets, the core polarization and the correlation effect are evaluated.     

三能级光纤激光器速率方程组的阈值解析解

 在考虑了泵浦损耗及激光损耗的情况下,解析求解了阈值泵浦下的三能级光纤激光器速率方程组,获得了泵浦功率阈值的显函数解析表达式,泵浦功率沿光纤变化的隐函数表达式,以及用功率变化表示的各个能级的粒子数密度随位置变化的显函数表达式。并利用这些表达式对光纤激光器的阈值特性进行了研究,研究表明：泵浦功率阈值随泵浦损耗系数增大而增大;激光上能级粒子数密度随归一化位置呈下降趋势,而下能级粒子数密度的变化与此相反;泵浦功率阈值越大(光纤长度越长),净增益系数随归一位置下降就越快。所获得的结果适用于单包层和双包层光纤激光器。     

CO+分子离子彗尾带系在近红外区域的光谱研究

CO 分子离子是一种重要的瞬态自由基分子,许多研究者对该带系进行了大量的研究。文章采用光外差-磁旋转-速度调制光谱技术测量了12C16O 分子离子彗尾带系(A2Πi-X2Σ )在近红外区域的3个支带(0,3),(1,4)和(3,6)的振转吸收光谱。利用最小二乘法拟合,得到了上态A2Πi(ν′=0,1,3)的精确的分子常数。进一步验证了光外差-磁旋转-速度调制光谱技术在吸收光谱测量中的优越性。     

光学频率标准与光钟的实现

综述了时间频率标准的发展过程.对构成光学频率标准的四个要素,即激光冷却、激光稳频、离子捕陷和光学频率梳进行了系统的介绍.详细描述了光钟的原理与系统构成,并对光学频率标准与光钟的应用前景进行了展望.     

Characterization of electrical charge separation at the interface of two aqueous solutions in the presence of concentration gradients and cation/anion mobility ratio asymmetry

Physical consequences of ionic diffusion processes play a major role on the outcome of electrophysiology experiments due to both their contribution to the ionic transmembrane transport and phenomena taking place at the measuring instruments interface. As most of the time heterogenities in biological media with respect to ionic diffusion constants are disregarded, we intended to look upon the general case of ionic diffusion at the interface of two liquids on which gradients of these diffusion constants no longer can be neglected. We developed a theoretical model for the diffusion potential which emerges at an aqueous interface under gradients of concentration and diffusion constants. The experimental validation of our model was achieved through potential difference measurements of the diffusion potential between two solutions containing sodium chloride (NaCl) and glycerine solutions of various concentrations. Within the studied domain of the electrical charge mobility ratio, we noticed that experimental results are in agreement with the theoretically inferred diffusion potential values. This demonstrates that the resulting relationship for the diffusion potential inferred from our model could be applied for other cases, as well. When the ionic solutions contains an indefinite quantity of glycerine or an unknown substance able to modify diffusion constants of sodium and chloride, it was shown that through measurements of the diffusion potential one can infer the unknown concentration of glycerine and the modified ionic mobility ratio. This, in turn, builds up the foundation for a novel yet simple and efficient analitycal sensing device for quantitative determination in the field.     

Recent study of nanomaterials prepared by inert gas condensation using ultra high vacuum chamber

The ultra high vacuum chamber was developed in the Department of Nuclear Physics, University of Madras with the funding from DST, India. This UHV chamber is used to prepare nanocrystalline materials by inert gas condensation technique (IGCT). Nanocrystalline materials such as PbF₂, Mn²⁺-doped PbF₂, Sn-doped In₂O₃ (ITO), ZnO, Al₂O₃, Ag₂O, CdO, CuO, ZnSe:ZnO etc., were prepared by this technique and characterized. Results of some of these materials will be presented in this paper. In solid-state²⁰⁷Pb NMR on PbF₂ a separate signal due to the presence of grain boundary has been observed. The structural phase transition pressure during the phase transformation from the cubic phase to orthorhombic phase under high pressure shows an increase with the decrease in grain size. Presence of electronic centres in nanocrystalline PbF₂ is observed from Raman studies and the same has been confirmed by photoluminescence studies. Al₂O₃ was prepared and⁵⁶Fe ions were implanted. After implantation segregation of⁵⁶Fe ions was examined by SEM. The oxidation properties of ITO were studied by HRTEM. As against the expectation of oxide coating on individual nanograins of In-Sn alloy, ITO nanograins grew into faceted nanograins on heat treatment in air and O₂ atmosphere. The growth of ITO under O₂ atmosphere showed pentagon symmetry. The PMN was initially prepared by solid-state reaction. Further, this PMN relaxor material will be used to convert into nanocrystalline PMN by IGCT with sputtering and will be studied     

Large scale silver nanowires network fabricated by MeV hydrogen(H~+) ion beam irradiation

A random two-dimensional large scale nano-network of silver nanowires(Ag-NWs) is fabricated by MeV hydrogen(H~+) ion beam irradiation. Ag-NWs are irradiated under H~+ion beam at different ion fluences at room temperature. The Ag-NW network is fabricated by H~+ion beam-induced welding of Ag-NWs at intersecting positions. H~+ion beam induced welding is confirmed by transmission electron microscopy(TEM) and scanning electron microscopy(SEM). Moreover, the structure of Ag NWs remains stable under H~+ion beam, and networks are optically transparent. Morphology also remains stable under H~+ion beam irradiation. No slicings or cuttings of Ag-NWs are observed under MeV H~+ion beam irradiation.The results exhibit that the formation of Ag-NW network proceeds through three steps: ion beam induced thermal spikes lead to the local heating of Ag-NWs, the formation of simple junctions on small scale, and the formation of a large scale network. This observation is useful for using Ag-NWs based devices in upper space where protons are abandoned in an energy range from MeV to GeV. This high-quality Ag-NW network can also be used as a transparent electrode for optoelectronics devices.     

NⅡ离子2p4f—2p3d辐射跃迁概率的理论研究

在全相对论理论框架下，利用多组态Dirac-Fock(MCDF)方法，系统计算了NⅡ离子2p4f—2p3d的辐射跃迁概率，得到的结果与已有实验值符合很好.具体计算中，详细分析了相对论效应、电子关联、弛豫效应、Breit相互作用和量子电动力学(QED)效应对能级精细结构及辐射跃迁概率的影响.结果表明：相对论效应、电子关联和弛豫效应对NⅡ 2p4f-2p3d辐射跃迁概率有很重要的影响,考虑了这些效应后计算值得到明显改善.     

Highly stable amorphous indium‐zinc‐oxide thin‐film transistors with back‐channel wet‐etch process

The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H₂O₂)‐based etchants. Then, after etching the Mo layer, SF₆ plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, V_GS = ±30 V, V_DS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Anisotropic flow at RHIC

STAR’s measurement of directed flow for pions,kaons(K 0 S ),protons and anti-protons,for Au+Au collisions at 200 GeV obtained in Run7 are presented,as well as elliptic flow for identified particles measured in Au+Au(Run7) and Cu+Cu(Run5) collisions.It is found that the slope of proton v 1 (y) at midrapidity is extremely small.Elliptic flow results are compared to Hydro calculation and the discrepancy is discussed.