Design of robust differential microphone arrays with the Jacobi–Anger expansion

Due to their small size, differential microphone arrays (DMAs) are very attractive. Moreover, they have been effective in combating noise and reverberation. Recently, a new class of DMAs of different orders have been developed with the MacLaurin’s series and the frequency-independent patterns. However, the MacLaurin’s series does not approximate well the exponential function, which appears in the general definition of the beampattern, when the intersensor spacing is not small enough. To circumvent this problem, we propose in this paper to approximate the exponential function with the Jacobi–Anger expansion. Based on this approximation and the frequency-independent Chebyshev patterns, we derive first-, second-, and third-order DMAs. Furthermore, in order to improve the robustness of DMAs against white noise amplification, we propose to use more microphones combined with minimum-norm filters. It is also shown that the Jacobi–Anger expansion is optimal from a mean-squared error perspective. Simulations are carried out to evaluate the performance of the proposed DMAs.     

FeCo基纳米晶合金高温交换耦合作用机理

研究了500和600℃真空退火后的纳米晶Fe_38.4Co₄₀Si₉B₉Nb_2.6Cu合金初始磁导率随温度的变化规律,发现较高温度(600℃)退火的FeCo基纳米晶合金,在非晶相居里温度以上较宽温度范围内磁导率没有明显的衰减,这是在双相纳米晶合金中观察到的一种新现象,其磁特性不同于Fe基纳米晶合金.为了探明这种现象的起源,估算了与剩余非晶相同成分的非晶合金的居里温度及纳米晶粒间发生交换耦合作用的参数 关键词： 交换耦合作用 非晶相居里温度 交换耦合穿透深度     

Annealing effects on the microwave permittivity and permeability properties of Fe79Si16B5 microwires and their micowave absorption performances

This paper reports that amorphous magnetic microwires(Fe79Si16B5) have been fabricated by a melt-extraction technique and have been annealed at 600°C and 750°C respectively.Differential scanning calorimeter measurements show that nanocrystalline magnetic phase(α-Fe) has been formed in the amorphous matrix when it was annealed at 600°C.Hard magnetic phase(Fe2B) was formed in the microwires annealed at 750°C,which increases the magnetic coercivity.Microwave permittivity and permeability are found to be dependent on the microstructures.The permittivity fitting results show that multi Lorentzian dispersion processes exist.For microwires annealed at 750°C,their resonance peaks due to the domain wall movements and natural resonance are found higher than those of microwires annealed at 600°C.The microwave absorption performance of microwires annealed at 600°C is found better than microwires annealed at 750°C.     

Field emission properties and surface structure of nickel containing amorphous carbon

Nickel containing amorphous carbon (a-C:Ni) films have been deposited by filtered cathodic vacuum arc (FCVA) technique by introducing pure nickel into the graphite target. The field electron emission property of a-C:Ni was improved when compared to that of pure tetrahedral amorphous carbon (ta-C) by FCVA. The emission threshold field of a-C:Ni film is about 5 V μm⁻¹, whilst the threshold field of the ta-C film is about 13 V μm⁻¹. Raman spectroscopy suggests that the sp² clusters in the carbon film increase both in size and number when Ni is introduced. However, the emission was found to degrade to threshold fields beyond 20 V μm⁻¹ after the a-C:Ni film was left in ambient for a week. This observation is attributed to surface absorption of oxygen on the a-C:Ni film, as determined by X-ray Photoelectron Spectroscopy.     

钴的表面增强拉曼散射中的电磁增强因子计算

本文初步探讨了钴电极的表面增强拉曼散射机理。采用二维阵列理论模型在 0 .5～ 4.0eV的光子能量范围对钴纳米椭球阵列的表面增强拉曼散射 (SERS)现象进行了理论分析。有关计算表明 ,经过合适的表面粗糙化的钴金属电极能产生较弱的表面增强效应 (SERS增强因子约 1 0 2 ～ 1 0 4 ) ,制备出具有高纵横比的纳米粒子阵列是得到钴体系较大的SERS增强因子的关键     

Spatial and Temporal CM Equalization for Broadband Wireless Indoor Networks at Millimeter Waves

Based on a new multipath channel model, a spatial-temporal combined CM equalization approach is derived at millimeter waves. Computer simulations are presented to testify the theoretical analysis. It is shown that this method can compensate the signal degradation caused by indoor multipath propagation. The convergence behavior of the spatial-temporal CMA is also analyzed.     

Growth of high-crystallinity uniform GaAs nanowire arrays by molecular beam epitaxy

The self-catalyzed growth of Ga As nanowires(NWs) on silicon(Si) is an effective way to achieve integration between group III–V elements and Si. High-crystallinity uniform Ga As NW arrays were grown by solid-source molecular beam epitaxy(MBE). In this paper, we describe systematic experiments which indicate that the substrate treatment is crucial to the highly crystalline and uniform growth of one-dimensional nanomaterials. The influence of natural oxidation time on the crystallinity and uniformity of Ga As NW arrays was investigated and is discussed in detail. The Ga As NW crystallinity and uniformity are maximized after 20 days of natural oxidation time. This work provides a new solution for producing high-crystallinity uniform III–V nanowire arrays on wafer-scale Si substrates. The highly crystalline uniform NW arrays are expected to be useful for NW-based optical interconnects and Si platform optoelectronic devices.     

非晶合金条带的爆炸焊接

 报道了利用爆炸焊接技术对铁基、铁镍基非晶合金条带（厚度约25 μm）进行单层和多层爆炸焊接的结果。金相分析结果表明，条带间相互结合良好；X光衍射结果说明，焊接后的条带仍保持非晶态，即使采用表面已有部分晶化德条带进行焊接，焊接后仍转化为非晶态。这说明在焊接过程中条带表面已发生熔化，且冷却速度也可达10⁶ K/s量级。     

<Emphasis Type="Italic">In situ</Emphasis> X-ray diffraction study of structural evaluation in Fe<Subscript>73</Subscript>Cu<Subscript>1.5</Subscript>Nd<Subscript>3</Subscript>Si<Subscript>13.5</Subscript>B<Subscript>9</Subscript> amorphous alloy at high temperature

The thermodynamics structural relaxation of Fe₇₃Cu_1.5Nd₃Si_13.5B₉ amorphous alloy from room temperature to 400°C has been investigated by measuring the structure factor with in situ X-ray diffraction. The structural information of the atomic configuration such as radial distribution function (RDF) and neighbor atomic distance was gained by Fourier transformation. The research result shows that the amorphous structure remains stable in the temperature range of 30 to 400°C but exhibits distinct changes in local atomic configuration with the increase of temperature. The quantitative determination of the neighbor atomic distance suggests that the degree of short-range order changes by the temperature altering the second nearest neighbor local atomic configuration of the amorphous when structural relaxation occurs. Supported by the Natural Science Foundation of Hebei Province of China (Grant No. A2007000296), the National Natural Science Foundation of China (Grant No. 50731005), SKPBRC (Grant Nos. 2007CB616915 and 2006CB605201), and PCSIRT (Grant No. IRT0650)     

Fibre gratings and devices for sensors and lasers

Although mainstream grating writing, more often than not using single photon excitation of germanosilicate based defects with CW 244 nm light, remains the key technology for complex devices it is now being complemented by a whole host of processes which can enhance and tailor the properties of both conventional and not‐so‐conventional fibre Bragg gratings. Further, processes for writing of gratings in non‐germanosilicate fibres have also continued to develop and include multi‐photon excitation directly into the band edge of the glass. It is now possible to custom tailor a gratings property based on the application and the nature of production as well as custom tailor the grating writing process to suit the type of fibre and application. Examples and suggestions where these can benefit sensors and lasers are outlined.