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61.
简要说明了三代像增强器的特点,分析了微通道板的离子反馈形成机理,给出有效抑制离子反馈对光阴极造成伤害的2种方法,即一种是减少和清除微通道板的吸附气体,另一种是阻止反馈离子反馈到光阴极上。介绍了国外最新的三代像增强器,以及使用优化改进的高性能微通道板显著减薄甚至彻底去除微通道板离子反馈膜的方法,该方法能维持砷化镓光阴极足够长的工作寿命,还介绍了最新发展的体导电微通道板和硅微通道板。指出高可靠性无膜选通砷化镓像增强器技术的实现,不仅需要微通道板在抑制离子反馈方面取得突破,还需要砷化镓光阴极在耐受离子反馈能力上进一步提高,同时还要结合和拓展选通电源的应用。 相似文献
62.
《Electroanalysis》2006,18(6):613-620
The interaction of malachite green (MG) with double‐stranded DNA (dsDNA) in pH 7.0 Britton–Robinson (B–R) buffer solution was investigated by electrochemical and spectrophotometric methods. Within the potential scan range of ?1.0 to +1.5 V (vs. SCE), MG has two oxidative peaks at 0.547 V and 0.833 V and one reductive peak at 0.362 V on cyclic voltammogram at the scan rate of 0.20 V/s. After the addition of dsDNA into the MG solution, the oxidative peak current at 0.547 V decreases obviously. The electrochemical parameters, such as the charge transfer coefficient (α), the surface reaction rate constant (ks) and the diffusion coefficient (D), were calculated and compared between in the absence and presence of dsDNA. The results show that these parameters of MG after adding dsDNA have greatly changed, which indicates that an electrochemical active complex was formed. The interaction mechanisms of MG with dsDNA are discussed in some details from the electrochemistry and UV‐vis spectrophotometry. The reduction of the peak current of MG after adding dsDNA was further used for the quantification of dsDNA by differential pulse voltammetry (DPV). The linear range for dsDNA is in the range of 10.0–100.0 μg/mL with the linear regression equation as Δip (μA)=0.065+0.0096 C (μg/mL) and the detection limit of 6.0 μg/mL (3σ). The influences of coexisting substances were investigated and artificial samples were determined with satisfactory results. 相似文献
63.
现场拉曼光谱研究乙腈在金电极上的解离吸附行为 总被引:2,自引:1,他引:1
利用共焦显微拉曼系统、结合合适的电极表面粗糙方法研究了非水体系 0 1mol/LLiClO4 /CH3CN溶液中 ,乙腈分子在金表面的吸附和解离行为。结果表明非水体系中乙腈可在金表面发生还原反应 ,产物CN- 离子与电极表面作用形成的表面配合物可在较宽的电位区间吸附于电极表面。溶液中的微量水、激光照射以及电极电位均对该反应有较大的影响。通过拉曼谱图的比较得出乙腈分子解离出的CN- 在金电极表面比在银电极表面有更强的吸附作用。 相似文献
64.
载能离子穿过固体界面引起界面原子迁移使界面原子混合和物质成分变化,从而导致界面发生材料相变。简要介绍了载能离子辐照引起金属/绝缘体界面混合效应及相变现象的主要实验研究进展、低能离子和高能离子辐照引起金属/绝缘体界面现象差异,并对离子辐照引起界面混合及相变的机制进行了初步探讨。When penetrating an interface between two kind of solids, energetic ions can induce atomic diffusion at both sides of the interface and then result in intermixing, atom re-distribution or composition change, as well as phase transformation. Main progress on the study of intermixing and phase change at metal/insulator interface induced by energetic ion irradiations, the difference of phenomena occurred at metal/insulator interfaces induced by high-and low-energy ions were briefly reviewed. Furthermore, the possible mechanisms related to intermixing and phase change at metal/insulator interface produced by energetic ion irradiations were also discussed in short words. 相似文献
65.
Based on scalar diffraction theory, 8-phase-level 256×256 elements diffractive microlens array with element dimension of 50×33 μm2 have been fabricated on the back-side of PtSi(3~5 μm) infrared CCD. The measurement results indicated that the ratio of the signal-to-noise of the infrared CCD with microlens was increased by a factor of 2.8. 相似文献
66.
Cluster ions have been recognized as a superb primary species in time of flight secondary ion mass spectroscopy (ToF-SIMS) compared with monatomic primary ions, as they significantly enhance the secondary ion yields from bulk samples. Self-assembled monolayers provide an important system for studying the fundamental mechanism involved in the yield enhancement.We used a gold cluster ion source to analyze a new type of self-assembled monolayer: a fluorocarbon-grafted polyethylene terephthalate. In addition to the structure details, which helped to understand the grafting mechanism, ToF-SIMS analysis revealed that fluorocarbon secondary ion yield enhancements by cluster ions were due to the enhanced sputter efficiency. A larger information depth may also be expected from the enhancement. Both mathematical definitions of damage cross-section and disappearance cross-section were revisited under a new context. Another cross-section parameter, sputter cross-section, was introduced to differentiate the beam induced sputter process from damage process. 相似文献
67.
利用离子速度影象技术研究了正一溴丁烷(n-C4H9Br)在231~267 nm波段的光解,得出了如下结论:正一溴丁烷(n-C4H9Br)在231~267 nm波段的吸收源于基态到三个最低激发态的跃迁,这三个激发态标识为1A″、2A′和3A′;发生在这三个排斥态的势能面(PES)上的光解最终导致C4H9 Br(2P3/2)或C4H9 Br*(2P1/2)的产生;2A′和3A′态之间存在避免交叉(Avoided crossing)会影响最终的光解产物;从基态1A′到激发态1A″的跃迁矩垂直于对称面,也就垂直于C-Br键;从基态1A′到激发态3A′的跃迁矩平行于对称面,同时平行于C-Br键;从基态1A′到激发态2A′的跃迁矩在对称面内,且与C-Br键成53.1°夹角.我们也讨论了正一溴丁烷(n-C4H9Br)在234 nm和267 nm附近光解时的避免交叉几率(Avoided crossingprobability),以及它对单通道相对产额(Relative fraction of the individual pathways)的影响. 相似文献
68.
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70.
M. Esmaeelpour 《Applied Surface Science》2006,252(18):6353-6359
This research investigates the effect of ion implantation dosage level and further thermal treatment on the physical characteristics of chromium coatings on Si(1 1 1) substrates. Chromium films had been exposed to nitrogen ion fluencies of 1 × 1017, 3 × 1017, 6 × 1017 and 10 × 1017 N+ cm−2 with a 15 keV energy level. Obtained samples had been heat treated at 450 °C at a pressure of 2 × 10−2 Torr in an argon atmosphere for 30 h. Atomic force microscopy (AFM) images showed significant increase in surface roughness as a result of nitrogen ion fluence increase. Secondary ion mass spectroscopy (SIMS) studies revealed a clear increased accumulation of Cr2N phase near the surface as a result of higher N+ fluence. XRD patterns showed preferred growth of [0 0 2] and [1 1 1] planes of Cr2N phase as a result of higher ion implantation fluence. These results had been explained based on the nucleation-growth of Cr2N phase and nitrogen atoms diffusion history during the thermal treatment process. 相似文献