Determination of trace amounts of cadmium and copper by atomic absorption spectrometry after simultaneous extraction and preconcentration using a new water-soluble polyacrylic acid/alumina sorbent

An analytical method using alumina modified with water-soluble polyacrylic acid polymer for the simultaneous separation and preconcentration of trace Cu and Cd in a column system, and their determination by flame atomic absorption spectrometry was developed. The conditions for coating Al₂O₃ with polyacrylic acid were optimized, then the column was packed with 50 mg of this sorbent. Cd and Cu solution was passed through a glass column at pH 4.5, and elution was carried out with 5 mL of 0.05 M HCl at a flow rate of 1 mL min⁻¹. A sorption capacity of 10 mg Cu and 12 mg Cd was obtained for 1 g sorbent. The detection limit was calculated as 4.5 μg L⁻¹ for Cu and 1.54 μg L⁻¹ for Cd in the final solution. Enrichment factors of 300 for Cd and 400 for Cu were obtained.     

Hydrogen-induced metal-oxide interaction studied on noble metal model catalysts

Summary The effect of hydrogen reduction on the structure and catalytic properties of “thin film”and “inverse”model systems for supported metal catalysts is discussed. Thin film model catalysts were obtained by epitaxial growth of Pt and Rh nanoparticles on NaCl(001), which were coated with amorphous or crystalline supports of alumina, silica, titania, ceria and vanadia. Structural and morphological changes upon hydrogen reduction between 473 and 973 K were examined by high resolution electron microscopy. Metal-oxide interaction sets in at a specific reduction temperature and is characterized by an initial “wetting”stage, followed by alloy formation at increasing temperature, in the order VO_x< TiO_x< SiO₂< CeO_x< Al₂O₃. “Inverse”model systems were prepared by deposition of oxides on a metal substrate, e.g. VO_x/Rh and VO_x/Pd. Reduction of inverse systems at elevated temperature induces subsurface alloy formation. In contrast to common bimetallic surfaces, the stable subsurface alloys of V/Rh and V/Pd have a purely noble metal-terminated surface, with V positioned in near-surface layers. The uniform composition of the metallic surface layer excludes catalytic ensemble effects in favor of ligand effects. Activity and selectivity, e.g. for CO and CO₂methanation and for partial oxidation of ethene, are mainly controlled by the temperature of annealing or reduction. Reduction above 573 K turned out to be beneficial for the catalytic activity of the subsurface alloys, but not for the corresponding thin film systems which tend to deactivate viaparticle encapsulation.</o:p>     

能动抛光磨盘的变形实验研究

 能动抛光磨盘实时产生不同的表面变形，在对大口径非球面光学元件进行精磨和抛光时实现与工件表面良好的大尺寸吻合，可以消除传统光学加工采用小尺寸磨头时带来的高频残余误差并提高加工效率。以加工直径1.3m左右，F/2的抛物面光学元件为例，对能动磨盘在不同离轴度时能够产生的变形进行了计算和实验。结果表明，能动磨盘能够以较高精度产生旋转对称或非对称的抛物面形状。对能动磨盘产生变形后的残余误差进行了分析。     

LBO晶体超光滑表面抛光机理

胶体SiO2抛光LBO晶体获得无损伤的超光滑表面,结合前人对抛光机理的认识,探讨了超光滑表面抛光的材料去除机理,分析了化学机械抛光中的原子级材料去除机理.在此基础上,对胶体SiO2抛光LBO晶体表面材料去除机理和超光滑表面的形成进行了详细的描述,研究抛光液的pH值与材料去除率和表面粗糙度的关系.LBO晶体超光滑表面抛光的材料去除机理是抛光液与晶体表面的活泼原子层发生化学反应形成过渡的软质层,软质层在磨料和抛光盘的作用下很容易被无损伤的去除.酸性条件下,随抛光液pH值的减小抛光材料的去除率增大;抛光液pH值为4时,获得最好的表面粗糙度.     

6H-SiC衬底片的表面处理

相比于蓝宝石,6H-SiC是制作GaN高功率器件更有前途的衬底.本文研究了表面处理如研磨、化学机械抛光对6H-SiC衬底表面特性的影响.用显微镜、原子力显微镜、拉曼光谱、卢瑟福背散射谱表征了衬底表面.结果表明经过两步化学机械抛光后提高了表面质量.经第二步化学机械抛光后的衬底具有优异的表面形貌、高透射率和极小的损伤层,其表面粗糙度RMS是0.12nm.在该衬底上用MOCVD方法长出了高质量的GaN外延膜.     

低温制备≥99.5%多晶氧化铝陶瓷

本文通过引入稀土氧化物Y2O3、Tm2O3为烧结助剂低温制备了氧化铝含量大于99.5;的多晶氧化铝陶瓷.实验表明:稀土氧化物的加入能够明显降低99.5;多晶氧化铝陶瓷的烧结温度,提高致密度.Y2O3、Tm2O3混合烧结助剂与单一稀土氧化物的烧结助剂相比能够明显抑制晶粒的生长,促进晶粒的均匀发育.当Y2O3+Tm2O3的含量为0.3;质量分数时,99.5;多晶氧化铝陶瓷的相对密度可达99.2;理论密度,抗弯强度为533MPa,显微硬度为17.2GPa.陶瓷断裂主要以穿晶断裂为主.     

微波烧结Al_2O_3陶瓷的研究

简要介绍了微波烧结的特点,对 Ａｌ２ Ｏ３ 陶瓷的微波烧结过程进行了介绍和分析,并同常规烧结进行了对比实验,在此基础上得出了一些结论,为陶瓷微波烧结提供了实验依据     

超光滑加工的后置处理算法研究

为了精确控制超光滑加工过程中磨头的运动轨迹,从而实现光学元件材料去除的均匀稳定,研究了超光滑加工的后置处理算法。分析了超光滑加工工艺的特点和相应的超光滑机床的机械结构,建立了机床的坐标系统,构造了机床的运动学模型。对于光学元件母线为任意平面曲线的情况,研究了磨头运动轨迹的等误差直线逼近算法。在曲率半径为290mm,相对口径为1∶2.9的凹球面上进行了超光滑加工实验。结果表明,利用所述算法可以精确地控制磨头的运动轨迹,从而保证材料去除的稳定性。     

极坐标系统下进行直角坐标扫描的离子束抛光

在离子束抛光设备研制过程中,离子源扫描运动方式的选择是很关键的,一般分为直角坐标方式扫描和极坐标方式扫描两种。根据两种扫描方式的特点,在极坐标系统下进行直角坐标扫描方式加工。该种方法采用直角坐标扫描方式下的驻留时间计算,算法相对简单。该种方法在极坐标系统下进行加工,同等情况下可加工圆形镜面的口径比直角坐标系统下更大些;而且离子源的可移动区域是一条直线,其余地方可以摆放其他设备,空间利用率较高。对这种新思路进行仿真分析,证实了其具有可行性。     

高精度中小11径非球面修抛技术研究

为实现高精度中小口径非球面的加工，介绍了一种非球面修抛技术。基于Preston假设，将抛光过程描述成一个线性方程，计算得到材料的去除量与抛光时间、抛光压力和零件转速之间的函数关系。设计了整体修抛法和环带修抛法两种方法，在数控抛光的基础上，对口径为Ф117mm的凹抛物面和口径为Ф17mm凸双曲面进行修抛，修抛后非球面的面形精度PV值为0．184μm，RMS均小于0．032μm，达到了工程化应用要求，实现了中小口径非球面的高精度加工。