Exchange‐coupled L10‐FePt/Fe composite patterns with perpendicular magnetization

L1₀‐FePt and exchange‐coupled L1₀‐FePt/Fe composite films are grown epitaxially on MgO(001) single crystal substrates and are subsequently large‐area patterned utilizing an electron beam lithography process with Ar⁺ ion etching. The patterning process of the continuous film system leads to a different demagnetization behavior resulting in an increase of the out‐of‐plane coercivity of the patterned samples. Due to exchange‐coupling between L1₀‐FePt and Fe the coercivity of the L1₀‐FePt/Fe composite patterns is reduced by 52% as compared to the coercivity of L1₀‐FePt patterns. From the analysis of the temperature dependence of the coercivity it follows that the dots include regions with reduced anisotropy. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

频率自适应最优权重阵列干涉条纹处理技术

考虑长基线水平阵列波束形成对声场模态呈现的滤波特征,建立了一种随频率改变滤波通带的阵列权矢量设计方法。基于简正波理论,结合声场波束形成特点,在分析了常规波束形成信号LOFAR谱图干涉条纹的清晰度和条纹结构不同于单水听器输出信号条纹现象基础上,采用线性等式约束的二次优化模型,给出了一种频率自适应的最优权重估计。数值仿真验证和试验数据分析表明,利用该方法设计的最优权重阵列波束处理,可以滤波出SRBR(Surface-Reflected Bottom-Reflected)或N-SRBR(Non-Surface-Reflected Bottom-Reflected)模态组成的波束形成信号,信号谱图干涉条纹斜率与理论分析基本一致。     

Entanglement dynamics and Bell violation of three-qubit states coupled to an XY spin chain with Dzyaloshinski–Moriya interaction

We investigate the entanglement dynamics and Bell violation of three-qubit quantum states under an environment consisting of an XY spin chain with Dzyaloshinski–Moriya (DM) interaction. From the results, we find that the entanglement dynamics depends not only on the DM interaction, the magnetic field, and the anisotropy parameter but also on the number of the freedom degrees of the environment. The decoherence-free subspaces of our model have been identified and the Bell violation of quantum states is also discussed.     

Exact decoherence dynamics of a single-mode optical field

We apply the influence-functional method of Feynman and Vernon to the study of a single-mode optical field that interacts with an environment at zero temperature. Using the coherent-state formalism of the path integral, we derive a generalized master equation for the single-mode optical field. Our analysis explicitly shows how non-Markovian effects manifest in the exact decoherence dynamics for different environmental correlation time scales. Remarkably, when these are equal to or greater than the time scale for significant change in the system, the interplay between the backaction-induced coherent oscillation and the dissipative effect of the environment causes the non-Markovian effect to have a significant impact not only on the short-time behavior but also on the long-time steady-state behavior of the system.     

On bifurcations in a chaotically stirred excitable medium

We study a one-dimensional filamental model of a chaotically stirred excitable medium. In a numerical simulation we systematically explore its rich bifurcation scenarios involving saddle-nodes, Hopf bifurcations and hysteresis loops. The bifurcations are described in terms of two parameters signifying the excitability of the reacting medium and the strength of the chaotic stirring, respectively. The solution behaviour, in particular at the bifurcation points, is analytically described by means of a nonperturbative variational method. Using this method we reduce the partial differential equations to either algebraic equations for stationary solutions and bifurcations, or to ordinary differential equations in the case of non-stationary solutions and bifurcations. We present numerical simulations corroborating our analytical results.     

Structural characterization of β-V2O5 films prepared by DC reactive magnetron sputtering

β-V₂O₅ films were successfully prepared on silicon substrates by direct current (DC) reactive magnetron sputtering. X-ray diffraction (XRD), Raman spectra and field emission scan electron spectroscopy (SEM) were used to characterize the samples. Results revealed that the deposition temperature significantly influenced on the crystal structure of V₂O₅ films in the growth process. When the deposition temperature was below 500 °C, the sputtered film exhibited the α-V₂O₅ structure. However, β-V₂O₅ film was successfully obtained at 550 °C. High deposition temperature might provide V and O ions high mobility and energy in the reactive sputtering process, which induced the metastable β-V₂O₅ phase formed. The thermal stability of β-V₂O₅ film was studied by micro-Raman spectroscopy. The structure of sputtered β-V₂O₅ film was unstable under high temperature conditions (beyond 500 °C).     

Room-temperature deposition of transparent conducting Al-doped ZnO films by RF magnetron sputtering method

Transparent conductive Al-doped zinc oxide (AZO) films with highly (0 0 2)-preferred orientation were deposited on quartz substrates at room temperature by RF magnetron sputtering. Optimization of deposition parameters was based on RF power, Ar pressure in the vacuum chamber, and distance between the target and substrate. The structural, electrical, and optical properties of the AZO thin films were investigated by X-ray diffraction, Hall measurement, and optical transmission spectroscopy. The 250 nm thickness AZO films with an electrical resistivity as low as 4.62 × 10⁻⁴ Ω cm and an average optical transmission of 93.7% in the visible range were obtained at RF power of 300 W, Ar flow rate of 30 sccm, and target distance of 7 cm. The optical bandgap depends on the deposition condition, and was in the range of 3.75-3.86 eV. These results make the possibility for light emitting diodes (LEDs) and solar cells with AZO films as transparent electrodes, especially using lift-off process to achieve the transparent electrode pattern transfer.     

Stress induced preferred orientation and phase transition for ternary WCxNy thin films

We deposit ternary WC_xN_y thin films on Si (1 0 0) substrates at 500 °C using direct current (DC) reactive magnetron sputtering in a mixture of CH₄/N₂/Ar discharge, and explore the effects of substrate bias (V_b) on the intrinsic stress, preferred orientation and phase transition for the obtained films by virtue of X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and selective area electron diffraction (SAED). We find that with increasing the absolute value of V_b up to 200 V the carbon (x) and nitrogen (y) atom concentrations of WC_xN_y films keep almost constant with the values of 0.75 and 0.25, respectively. The XPS and SAED results, combined with the density-functional theory (DFT) calculations on the electronic structure of WC_0.75N_0.25, show our obtained WC_xN_y films are single-phase of carbonitrides. Furthermore, we find that the compressive stress sharply increases with increasing the absolute value of V_b, which leads to a pronounced change in the preferred orientation and phase structure for the film, in which a phase transition from cubic β-WC_xN_y to hexagonal α-WC_xN_y occurs as V_b is in the range of −40 to −120 V. In order to reveal the relationship between the stress and phase transition as well as preferred orientation, the DFT calculations are used to obtain the elastic constants for β-WC_xN_y and α-WC_xN_y. The calculated results show that the preferred orientation is dependent on the competition between strain energy and surface energy, and the phase transition can be attributed to a decrease in the strain energy.     

A model for phase separation in systems with orbital ordering

The possibility of phase separation in the substances with orbital ordering is analyzed. The additional charge carriers introduced due to doping favor the formation of nanosize inhomogeneities with the orbital structure different from that in the undoped material. The shapes and sizes of such inhomogeneities are determined.     

Concept of the field-driven domain wall motion memory

In this paper, the concept of field-driven domain wall motion memory is presented. It is confirmed that a domain is shifted with a carefully designed non-uniform field by micromagnetic simulations. The shift of a domain—a bit—can be established by the motion of two domain walls to the same direction and the same distance. In order to get a better understanding of the domain wall motion under the non-uniform transverse magnetic field, we investigate the motion of the transverse Néel-type domain wall by micromagnetic simulations and the collective coordinate approach. The validity of the equation of motion for the domain wall is confirmed by the micromagnetic simulations as functions of the gradient of the non-uniform field, the saturation magnetization, and the Gilbert damping parameter α.