Ultrasonically induced ZnO–biosilica nanocomposite for degradation of a textile dye in aqueous phase

In the present study, a porous clay-like support with unique characteristics was used for the synthesis and immobilization of ZnO nanostructures to be used as sonocatalyst for the sonocatalytic decolorization of methylene blue (MB) dye in the aqueous phase. As a result, the sonocatalytic activity of ZnO–biosilica nanocomposite (77.8%) was higher than that of pure ZnO nanostructures (53.6%). Increasing the initial pH from 3 to 10 led to increasing the color removal from 41.8% to 88.2%, respectively. Increasing the sonocatalyst dosage from 0.5 to 2.5 g/L resulted in increasing the color removal, while further increase up to 3 g/L caused an obvious drop in the color removal. The sonocatalysis of MB dye over ZnO–biosilica nanocomposite was temperature-dependent. The presence of methanol produced the most adverse effect on the sonocatalysis of MB dye. The addition of chloride and carbonate ions had a negligible effect on the sonocatalysis, while the addition of persulfate ion led to increasing the color removal from 77.8% to 99.4% during 90 min. The reusability test exhibited a 15% drop in the color removal (%) within three consecutive experimental runs. A mineralization efficiency of 63.2% was obtained within 4 h.     

Timing performance of ZnO:Ga nanopowder composite scintillators

The implementation of nanocrystal‐based composite scintillators as a new generation of ultrafast particle detectors is explored using ZnO:Ga nanopowder. Samples are characterized with a spectral‐time resolved photon counting system and pulsed X‐rays, followed by coincidence time resolution (CTR) measurements under 511 keV gamma excitation. Results are comparable to CTR values obtained using bulk inorganic scintillators. Bringing the ZnO:Ga nanocrystal's timing performance to radiation detectors could pave the research path towards sub‐20 ps time resolution as shown in this contribution. However, an efficiency boost when placing nanopowders in a transparent host constitutes the main challenge in order to benefit from sub‐nanosecond recombination times. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Highly flexible,transparent, conductive and antibacterial films made of spin-coated silver nanowires and a protective ZnO layer

We prepared highly flexible, transparent, conductive and antibacterial film by spin coating a silver nanowire suspension on a poly (ethylene terephthalate) (PET) substrate. The ZnO layer covered the conductive silver nanowire (AgNW) network to protect the metal nanowires from oxidization and enhance both wire-to-wire adhesion and wire-to-substrate adhesion. It is found that the number of AgNW coatings correlates with both the sheet resistance (R_s) and the transmittance of the AgNW/ZnO composite films. An excellent 92% optical transmittance in the visible range and a surface sheet resistance of only 9 Ω sq⁻¹ has been achieved, respectively. Even after bending 1000 times (5 mm bending radius), we found no significant change in the sheet resistance or optical transmittance. The real-time sheet resistance measured as a function of bending radius also remains stable even at the smallest measured bending radius (1 mm). The AgNW/ZnO composite films also show antibacterial effects which could be useful for the fabrication of wearable electronic devices.     

Fabrication of a solution-processed thin-film transistor using zinc oxide nanoparticles and zinc acetate

We have fabricated a solution-processed ZnO thin-film transistor without vacuum deposition. ZnO nanoparticles were prepared by the polyol method from zinc acetate, polyvinyl pyrrolidone, and diethyleneglycol. The solution-processable semiconductor ink was prepared by dispersing the synthesized ZnO in a solvent. Inverted stagger type thin-film transistors were fabricated by spin casting the ZnO ink on the heavily doped Si wafer with 200 nm thick SiO₂, followed by evaporation of Cr/Au source and drain electrodes. After the drying and heat treatment at 600 C, a relatively dense ZnO film was obtained. The film characteristics were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). In order to obtain the electrical properties of the solution-derived transistor, the on–off ratio, threshold voltage, and mobility were measured.     

Fabrication and characterization of n-ZnO on p-SiC heterojunction diodes on 4H-SiC substrates

We report on the growth and characterization of n-ZnO/p-4H-SiC heterojunction diodes. Our n-ZnO layers were grown with radical-source molecular beam epitaxy (RS-MBE) on p-4H-SiC epilayers, which was previously prepared in a horizontal hot-wall reactor by chemical vapour deposition (CVD) on the n-type 4H-SiC wafers. Details on the n-ZnO growth on 8-off 4H-SiC wafers, the quality of the layers and the nature of realized p–n structures are discussed. Mesa diode structures were fabricated. Al was sputtered through a circle mask with diameter 1 mm and annealed to form Ohmic contacts to p-SiC. Ohmic contacts to the n-ZnO were formed by 30 nm/300 nm Ti/Au sputtered by electron beam evaporation. Electrical properties of the structures obtained have been studied with Hall measurements, and current–voltage measurements (I–V). I–V measurements of the device showed good rectifying behavior, from which a turn-on voltage of about 2 V was obtained.     

Electrical characterisation of phosphorus-doped ZnO thin films grown by pulsed laser deposition

Phosphorus-doped ZnO films were grown by pulsed laser deposition using a ZnO:P₂O₅-doped target as the phosphorus source with the aim of producing p-type ZnO material. ZnO:P layers (with phosphorus concentrations of between 0.01 to 1 wt%) were grown on a pure ZnO buffer layer. The electrical properties of the films were characterised from temperature dependent Hall-effect measurements. The samples typically showed weak n-type conduction in the dark, with a resistivity of 70 Ω cm, a Hall mobility of μ_n0.5 cm² V ⁻¹ s⁻¹ and a carrier concentration of n3×10¹⁷ cm⁻³ at room temperature. After exposure to an incandescent light source, the samples underwent a change in conduction from n- to p-type, with an increase in mobility and decrease in concentration for temperatures below 300 K.     

纳米氧化锌的过饱和控制生长与大小分布控制.

"在非水介质中合成了纳米氧化锌,测定了纳米氧化锌的紫外吸收光谱,并用有效质量模型计算了粒子大小,开发并命名了一种称之为纳米粒子过饱和控制生长的技术,该技术涉及将小的纳米粒子悬浊液加入到大的粒子悬浊液中,结果因为不同大小粒子间的溶解度差异小的粒子将全部溶解,大的粒子将整体长大,大粒子悬浊液的粒子数将保持不变,大粒子的生长速度显著比Ostwald老化的高．该技术最显著的特征是只要最初两悬浊液粒子大小的差异足够大,分布不是太宽,则粒子大小的分布将会因为粒子如此长大而变窄．"     

Dependences of structural and electrical properties on thickness of polycrystalline Ga-doped ZnO thin films prepared by reactive plasma deposition

Polycrystalline Ga-doped (Ga content: 4 wt%) ZnO (GZO) thin films were deposited on glass substrates at 200 C by a reactive plasma deposition with DC arc discharge technique. The dependences of structural and electrical properties of GZO films on thickness, ranging from 30 to 560 nm, were investigated. Carrier concentration, n, and Hall mobility, μ, increases with increasing film thickness below 100 nm, and then the n remains nearly constant and the μ gradually increases until the thickness reaches 560 nm. The resistivity obtained of the order of 10⁻⁴ Ω cm for these films decreases with increasing film thickness: The highest resistivity achieved is 4.4×10⁻⁴ Ω cm with n of 7.6×10²⁰ cm⁻³ and μ of 18.5 cm²/V s for GZO films with a thickness of 30 nm and the lowest one is 1.8×10⁻⁴ Ω cm with n of 1.1×10²¹ cm⁻³ and μ of 31.7 cm²/V s for the GZO film with a thickness of 560 nm. X-ray diffraction pattern for all the films shows a hexagonal wurtzite structure with its strongly preferred orientation along the c-axis. Full width at half maximum of the (002) preferred orientation diffraction peak of the films decreases with increasing film thickness below 100 nm.     

Preconcentration of Trace Cu(II) in Water Samples with Nano-Sized ZnO and Determination by GFAASSCIEI北大核心CSCD

The content of copper in natural water is very low, and direct determination is difficult. Therefore, it is very meaningful for the combination of efficient separation-enrichment technology and highly sensitive detection. Based on the high adsorption capacity of Cu(II) onto nano-sized ZnO, a novel method by using nano-sized ZnO as adsorbent and graphite furnace atomic absorption spectrometry as determination means was in this work. The adsorption behaviors of Cu(II) on nano-sized ZnO was studied. Effects of acidity, adsorption equilibrium time, adsorbent dosage and coexisting ions on adsorption rates were investigated. The results showed that the adsorption efficiency was above 95% in a pH range from 3.0 to 7.0. Compared with other adsorbents for trace element enrichment such as activated carbon, nano-sized TiO2 powder, the most prominent advantage is nanosized ZnO precipitate with the concentrated element can directly dissolved in HCl solution without any filtration and desorption process can directly analyzed by graphite furnace atomic absorption spectrometry or inductively coupled plasma atomic emission spectrometry. Compared with colloid nano materials, nano-sized ZnO is the true solution after dissolving have small matrix effect and viscosity more suitable for graphite furnace atomic absorption spectrometry or inductively coupled plasma atomic emission spectrometry detection. The proposed method possesses low detection limit (0.13 mu g.L-1) and good precision (RSD=2.2%). The recoveries for the analysis of environmental samples were in a rang of 91.6%-92.6% and the analysis results of certified materials were compellent by using the proposed method.     

纳米金刚石掺混纳米氧化锌的场发射特性

利用水热法制备了菊花状的氧化锌纳米棒,并进行表征,将纳米氧化锌掺入纳米金刚石中配制成电泳液,超声分散后电泳沉积到钛衬底上,再经热处理后进行场发射特性的测试.结果表明:未掺混的金刚石阴极样品的开启电场为7.3V/μm,在20V/μm的电场下,场发射电流密度为81μA/cm2;掺混后阴极样品的场发射开启电场降低到4.7~6.0V/μm,在20V/μm电场下,场发射电流密度提高到140~158μA/cm2.原因是纳米ZnO掺入后,增强了涂层的电子输运能力、增加了有效发射体数目,提高了场增强因子β,而金刚石保证了热处理后涂层与衬底的良好键合,形成了欧姆接触,降低了场发射电流的热效应.场发射电流的稳定性随掺混ZnO量的增加而下降,要兼顾场发射电流密度及其稳定性,适量掺入ZnO可有效提高纳米金刚石的场发射性能.