磁控溅射制备ZnO薄膜的受激发射特性的研究

用射频磁控反应溅射法在二氧化硅衬底上制备ZnO薄膜。得到了在不同温度下ZnO薄膜的吸收与光致发光。观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;室温 (30 0K)下 ,PL谱中仅有自由激子发光峰。这些结果证实了ZnO薄膜具有较高的质量。探讨了变温ZnO薄膜的发光特性。研究了ZnO薄膜的受激发射特性。     

单晶硅纳米薄膜面向导热MD研究的探讨

本文分析了经典分子动力学(Molecular Dynamics)技术在模拟厚度在纳米量级的单晶硅薄膜平行于薄膜平面方向的热导率时出现的用难,指出精确计算薄膜表面附近处的原子运动状态对于单晶硅纳米薄膜面向热导率的分子动力学模拟具有重要意义,并在此基础上提出采用基于分子动力学和预处理共轭梯度法(Preconditioned conjugate Gradients)的Ab Initio方案模拟面向热导率。     

Thin ORMOSIL Films with Different Organics

Structural, optical and electrical properties of silicate films modified by structure fragments containing different organic groups were studied. The ORMOSILs were produced by a cohydrolysis of tetraethoxysilane with different types of alkyl (aryl) substituted alkoxysilanes. Film structure and its evolution during heat treatment were studied by ellipsometry and IR spectroscopy. For methyl- and phenyl-modified silicate films the shrinkage is lower than for silicate ones in the range of annealing temperature from 200 to 500°C. The shrinkage of phenyl-modified silicate film is more than three times lower than of methyl- and trimethyl-modified ones. The presence of single or double C=C bonds in the organic chain leads to an increase in the film shrinkage due to the thermodestruction of the bond as it is confirmed by IR data. In the case of phenyl- and methyl-modified silicate films this process starts from 500°C and it is accompanied by abrupt film shrinkage. The dielectric constant and the loss tangent of methyl and phenyl groups decrease due to reduction of hydroxyl content and film density. Other groups are not effective due to their thermodestruction at lower temperatures.     

Strongly nonlinear luminescence in oxidized porous silicon films

Partially oxidized free-standing porous silicon films show a strongly superlinear increase in photoluminescence (PL) intensity above a threshold cw excitation intensity of 10 W/cm². The PL-intensity increase can be expressed by a power law with n9 as a function of the excitation intensity. The PL-peak wavelength of this emission is slightly redshifted from that at low-excitation levels. These changes are fully reversible and reproducible, but not observed in samples on substrate. We attribute this behavior to thermal reexcitation of carriers trapped at the dangling bond states in initially nonluminescent Si nanocrystallites.     

TiO2半导体薄膜的制备与特性

ＴｉＯ_２半导体薄膜的制备与特性徐明霞，徐廷献，刘宁（天津大学材料系天津３０００７２）关键词ＴｉＯ_２，半导体薄膜，制备ＴｉＯ２薄膜或涂层，作为优良的色材、氧敏传感器材料和湿式太阳电池的光电阳极材料具有广阔的应用前景［１～３］．传统制膜技术主要采用物理...     

Bi_4Ti_3O_(12)薄膜的结构与形貌分析

采用金属与金属氧化物复合靶的射频溅射法,在S_1,Au,Pt和Ti基片上沉积制备Bi_4Ti_3O_(12)(BTO)铁电薄膜,对不同基片沉积的BTO薄膜,以及不同退火温度下的薄膜的相结构、成分及形貌进行了分析。结果表明,BTO薄膜的结构与退火温度和沉积基片有关,不同基片上钙钛矿结构形成的温度按T_t相似文献   

金刚石膜合成条件下的鞘层与等离子体参数分布

本文报导了在用热阴极直流放电等离子体化学气相沉积（通常也称ＥＡＣＶＤ．即电子辅助化学气相沉积）方法合成金刚石的条件下的等离子体密度、电子温度、等离子体空间电位分布及基片附近等离子体鞘结构，并讨论其对成膜的影响．     

Photo-electrochemical properties of multi-layered thin films composed of chalcogenide and superionic conductor glasses

Multi-layered thin films, which consisted of metallic silver, GeSe₃ glass, and silver oxyhalide superionic conductor glass were prepared. Photo- and electrochemical reaction of metallic silver with the chalcogenide glass layer was studied by optical absorbance and cyclic-voltammetry. Photo-doping of silver through the superionic glass layer was observed using evaporated AgI---Ag₂MoO₄ film and it was partly undoped by electrochemical treatment. However, no photo-doping was observed for the cell consisting of a AgI---AgPO₃ dip-coated layer. The doped silver was dissolved into the GeSe₃ layer during the photo-doping process. However, it formed another intermediate compound layer (probably silver selenide) during the electrodoping process.     

一种新型叠层光敏全息记录软片

通过化学反应，在三醋酸纤维素睛基的正反两面同时生成具有感光活性的光敏层的方法，获得了一种具有叠层光敏性的全息记录软片：重铬酸盐－三醋酸纤维素酯。由该软片记录的叠层体积全息光栅，具有迄今为止，最高的一级实验衍射效率（５４％）。