纳米晶聚合物复合薄膜PbTiO3-PEK-c的电光特性及其弛豫过程的研究

制备了掺杂型纳米晶聚合物钛酸铅聚醚醚酮 (PbTiO3 PEK c)复合薄膜 ,采用简单透射技术测量了该复合薄膜的线性电光系数 ,并研究了该复合薄膜的电光特性的弛豫过程     

Ellipsometric analysis and optical absorption characterization of gallium phosphide nanoparticulate thin film

Gallium phosphide (GaP) nanoparticulate thin films were easily fabricated by colloidal suspension deposition via GaP nanoparticles dispersed in N,N-dimethylformamide. The microstructure of the film was performed by x-ray diffraction, high resolution transmission electron microscopy and field emission scanning electron microscopy. The film was further investigated by spectroscopic ellipsometry. After the model GaP+void|SiO₂ was built and an effective medium approximation was adopted, the values of the refractive index n and the extinction coefficient k were calculated for the energy range of 0.75 eV-4.0 eV using the dispersion formula in DeltaPsi2 software. The absorption coefficient of the film was calculated from its k and its energy gaps were further estimated according to the Tauc equation, which were further verified by its fluorescence spectrum measurement. The structure and optical absorption properties of the nanoparticulate films are promising for their potential applications in hybrid solar cells.     

Laser‐Induced Self‐Assembled Nanostructures on Electron‐Transparent Substrates

Currently, one of the challenges in high‐resolution transmission electron microscopy (TEM) studies of nanomaterials is to make contamination‐free materials in a simple and time‐efficient way. Here, a method is demonstrated that combines nanosecond‐pulsed laser dewetting of thin films with a film float‐off technique to realize nanostructures (NSs) on electron‐transparent substrates in a robust and rapid manner. NSs of metal (Ag) and bimetals (AgCo, AuCo) ranging from 20 to 150 nm are synthesized on thin carbon film deposited on mica substrates. The NS/carbon system is subsequently transferred onto TEM grids by a float‐off process resulting from debonding of the carbon from mica due to their contrasting hydrophobic nature. This process enables the fabrication of different NSs on flexible and electron‐transparent substrates.     

Optical Thin-Film Sensors for the Determination of Aqueous Halide Ions

Fourteen thin-film optical sensors in which halide-sensitive fluorophores are immobilized in a thin copolymer film (50 m, dry) have been developed and characterized. The sensor films use rhodamine, 6-methoxyquinoline, and harmane dyes which have been functionalized and bound to a hydrophilic copolymer. The sensor films are reversibly capable of determining aqueous bromide and iodide with 4 and 2% accuracy, respectively, at concentrations of around 10^–3 mol dm^–3, and are more sensitive than previous plastic sensor fabrications. The 90% response time to molar iodide is 30–60 s. A combination of sensor films allows the simultaneous determination of both I^– and Br^– in a mixed-halide solution. The interference of several ions, including pseudo-halides, on the sensor films has been studied.     

磁场中液氦薄膜表面电子涟波子系统的性质

研究了磁场中液氦薄膜表面电子与涟波子强耦合和弱耦合的性质。采用线性组合算符方法导出磁场中液氦薄膜表面电子 涟波子系统的振动频率和基态能量。讨论磁场对表面电子 涟波子系统的振动频率和基态能量的影响。     

晶体偏光棱镜光强透射比研究

在菲涅耳公式、相位匹配条件和多光束干涉理论的基础上,将晶体偏光棱镜的各参量表示为合理的几何模型,得出了光强透射比随空间入射角的变化关系,并设计了验证光强透射比的实验,实验结果和理论推导相一致.结果表明：胶合层间的多光束干涉对棱镜光强透射比的影响不可忽略,对于空气隙型偏光棱镜,由于空气隙间多光束干涉的影响,光强透射比随任意角度变化较大,而用胶合介质胶合的棱镜,其透射比对空间入射角不是很敏感.     

Sb，In，P掺杂对SnO_2薄膜透明导电性能的影响(英文)

采用溶胶凝胶(Sol-Gel)技术制备了SnO2:(Sb,In)透明导电薄膜,优化了制备工艺参数,获得了最佳制备条件,研究表明,4%的铟掺杂有效地改善了薄膜的内部结构,使得紫外-可见光的透过率显著增加;7%的锑掺杂释放出了更多的载流子,使薄膜的方块电阻降低,2%的磷掺杂因准连续杂质能带的形成进一步提高了薄膜的电导率.Sb、In、P的掺入使得SnO2薄膜的紫外-可见光的透过率达83%,方块电阻达38Ω/□     

High‐mobility solution‐processed zinc oxide thin films on silicon nitride

A high effective electron mobility of 33 cm² V^–1 s^–1 was achieved in solution‐processed undoped zinc oxide (ZnO) thin films. The introduction of silicon nitride (Si₃N₄) as growth substrate resulted in a mobility improvement by a factor of 2.5 with respect to the commonly used silicon oxide (SiO₂). The solution‐processed ZnO thin films grown on Si₃N₄, prepared by low‐pressure chemical vapor deposition, revealed bigger grain sizes, lower strain and better crystalline quality in comparison to the films grown on thermal SiO₂. These results show that the nucleation and growth mechanisms of solution‐processed films are substrate dependent and affect the final film structure accordingly. The substantial difference in electron mobilities suggests that, in addition to the grain morphology and crystalline structure effects, defect chemistry is a contributing factor that also depends on the particular substrate. In this respect, interface trap densities measured in high‐κ HfO₂/ZnO MOSCAPs were about ten times lower in those fabricated on Si₃N₄ substrates. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

     

对薄层柱壳爆炸膨胀断裂过程的研究

 本文提出了一个用于描述动态破坏发展过程的损伤度函数。从这个损伤度函数出发,把材料特征性方程取为强化粘塑性本构方程形式,导出了薄层柱壳爆炸膨胀运动在两种近似下（恒定膨胀速度近似合恒定应变速率近似）断裂判据的解析表达式。结果分析表明,在上述条件下,存在着一个动态断裂“塑性峰”,在这个峰值条件的应变率下,柱壳出现贯穿断裂时刻的应变最大。以软钢为算例,本断裂判据可以比较好地解释Иванов和陈大年等给出的实验结果。这时,动态断裂“塑性峰”对应的应变率为4×10⁴ s^-1,相应的应变约为60%~80%。     

Bi-Sb-Te基热电薄膜温差电池离子束溅射制备与表征

本文采用离子束溅射Bi/Te和Sb/Te二元复合靶,直接制备n型Bi₂Te₃热电薄膜和p型Sb₂Te₃热电薄膜.在退火时间同为1 h的条件下,对所制备的Bi₂Te₃薄膜和Sb₂Te₃薄膜进行不同温度的退火处理,并对其热电性能进行表征.结果表明,在退火温度为150 ℃时,制备的n型Bi₂Te₃关键词： 薄膜温差电池 2Te₃薄膜')" href="#">Sb₂Te₃薄膜 2Te₃薄膜')" href="#">Bi₂Te₃薄膜 离子束溅射