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排序方式: 共有677条查询结果,搜索用时 15 毫秒
1.
Zhengmao Zhu 《Applied Surface Science》2005,252(2):303-310
The reactivity of the surface of poly(ethylene terephthalate) (PET) film under 172 nm UV irradiation (xenon excimer lamp) towards nitrogen-borne 1-octene, n-nonane and heptafluorodecene vapor was investigated. Materials receiving from 0 to 24 J/cm2 of UV were examined by X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (ToF/SIMS), water and mineral oil contact angle measurement and atomic force microscopy (AFM). A uniform nanoscale layer developed on PET surface attributed to the grafting reaction between photolytically-produced polymer radicals and vapor phase molecules. 相似文献
2.
P. M. Larionov A. N. Malov M. M. Mandrik N. A. Maslov A. M. Orishich 《Journal of Applied Spectroscopy》2003,70(1):38-42
We investigated the laser-induced fluorescence spectra (LIF) of porcine cardiac tissues with different degrees of viability. The data obtained are compared with the results of routine histological investigations and also with the experiments performed with the use of fluorescent probes. It has been found with a high degree of reliability that the loss of the viability of the myocardium tissue leads to the alteration of its LIF spectra. This can be used for low-invasive rapid control of transplant viability in the process of its preparation and during surgery. 相似文献
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In photochemical vapor deposition of aluminum film on silicon using dimethylaluminum hydride, (CH3)2AlH, a surface reaction dominated below a (CH3)2AlH pressure of 0.3 m Torr at 200°C, which was induced only with the 160 nm band emitted from a deuterium lamp. A gas-phase reaction occurred above 0.3 mTorr at 200°C, which could be induced by both 160 nm and 240 nm emission bands from the lamp. To distinguish between surface ad gas-phase reactions, a thickness profile was used. At 240°C the surface reaction could be induced even by the 240 nm band, while the deposits formed under illumination of the two bands were thinner than those obtained with only the 240 nm band, indicating occurrence of vacuum ultraviolet (VUV)-enhanced desorption. The mechanism responsible for the observed wavelength dependence in unclear. The electrical resistivity of the films deposited at 200°C was 4.5 μΩ cm, which did not change with wavelength. 相似文献
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E. U. Franck 《Journal of solution chemistry》1973,2(2-3):339-356
A survey is given of recent experimental results obtained from high-temperature, high-pressure investigations with water, aqueous solutions, and ionic fluids. Data on the static dielectric constant of water to 550°C and 5 kbar are given and discussed with respect to their relation to water structure. Infrared and Raman spectra of HDO in pure water have been obtained to 400°C and 4 kbar, which give information on hydrogen bonding. Xe–H2O and CO2–H2O mixtures were investigated in the infrared. Ni(II) and Cu(II) complexes were investigated by absorption spectroscopy in aqueous solutions of high chloride content to 350°C and 2–6 kbar. The gas-liquid critical point of ammonium chloride was found at 880°C and 1635 bars. This fluid appears to be predominantly ionic even in the critical region. The possibility of converting pure polar fluids such as ammonia and water into concentrated ionic solutions by self-ionization at very high pressures is mentioned.This paper was presented at the symposium, The Physical Chemistry of Aqueous Systems, held at the University of Pittsburgh, Pittsburgh, Pennsylvania, June 12–14, 1972, in honor of the 70th birthday of Professor H. S. Frank. 相似文献
8.
YUAN Mengjia WANG Xia CHEN Long ZHANG Mingxing HE Linwei MA Fuyin LIU Wei WANG Shuao 《高等学校化学研究》2021,37(3):679-685
As a rising star among porous solid materials, covalent organic frameworks(COFs) with excellent properties including but not limit to facilely controllable structure, high porosity, and multi-chemical functionality represent significant potential for efficient 127Xe/85Kr capture and separation. In this study, through tuning the length of the organic ligands, two-dimensional(2D) COF mate-rials with identical connection group but different pore properties, denoted as ATFG-COF and TpPa-COF with AA-stacking model and TpBD-COF with AB-stacking model were synthesized and tested for Kr and Xe adsorption for the first time. Adsorption measurements indicate that the narrower pore apertures and higher porosity are conducive for COF materials to capture Xe and Kr. Furthermore, the Henry's constant, isosteric heat of adsorption(Qst), and ideal adsorbed solution theory(IAST) selectivity of ATFG-COF, the pore size of which is closest to the kinetic diameter of the Xe atom(0.41 nm) among 2D COF materials, were carried out based on the single component sorption isotherms. The results illustrate that the high isosteric heat values of Xe/Kr adsorption on ATFG-COF are 25 and 16 kJ/mol at room temperature, respectively. Henry's law predicts that the selectivity factor of Xe to Kr is 6.07, consistent with the adsorption selectivity(ca. 6) calculated based on the IAST. 相似文献
9.
A. G. Mirochnik B. V. Bukvetskii E. V. Gukhman V. E. Karasev 《Journal of fluorescence》2003,13(2):157-162
The comparative study of the crystal structures of benzoylacetonato- (1), p-toluylacetonato- (2) and p-ethylbenzoylacetonatoboron (3) difluoride was carried out. Correlation of the luminescence properties of the complexes 1–3 and their crystal structures was revealed. The excimer formation in these compounds occurred the most efficiently for the complexes 1 characterized by the formation of stacks of molecules, unlike the complex 3, where individual dimers behaved as excimer-forming centers. The maximal fluorescence intensity was observed for the complex 2, which had the highest structural ordering. 相似文献
10.
F. L. Vook 《辐射效应与固体损伤》2013,168(3-4):155-160
This paper was given as the opening address at the 1970 Albany International Conference on Radiation Effects in Semiconductors, and it attempts to establish a general overview of the field by concentrating on recent research developments and important unanswered questions. The continuing importance of impurity-defect interactions, of microscopic defect identification, and of the necessity for more theoretical calculations are emphasized. The rapid development of the field of ion implantation and its close relationship with radiation effects studies are pointed out. It is predicted that research in compound semiconductors will increase rapidly with close beneficial interaction with ion implantation studies. 相似文献