35Cr25Ni12奥氏体耐热钢中碳化物的电子显微分析

应用扫描电镜（SEM）和透射电镜（TEM）研究了长期使用前后的35Cr25Ni12奥氏体耐热钢中的碳化物演变行为；该钢固溶时效后的组织由初晶奥氏体及M23C6共晶碳化物组成，奥氏体基体中析出了二次M23C6，二次碳化物总是与基体保持立方－立方取向关系；长期使用（3、5年）后，奥氏体中析出的二次碳化物量明显增加，部分M23C6已转变为M6C，M6C与奥氏体基体以及二次碳化物M23C6保持[001]M6C//[221]A//[221]M23C6孪晶取向关系。     

用于高数值孔径物镜的可调光瞳滤波器

根据矢量衍射理论，提出了一种用于提高高数值孔径显微物镜纵向分辨率的可调二元环形光瞳滤波器，通过改变滤波器的环半径获得不同的纵向分辨率，并利用共焦显微术点扩散函数的乘积性大大地降低了旁瓣相对主瓣的比值。模拟结果表明，这种新型滤波器不仅可以提高高数值孔径物镜的纵向分辨率，同时基本上不影响横向分辨率。     

A comparative study of the propagation of vectorial nonparaxial beams in the use of different approaches

Starting from the vectorial Rayleigh diffraction integral formula and using a simple expansion of the nucleus in the Rayleigh formula, an analytical propagation equation of vectorial nonparaxial Gaussian beams in free space is derived, which permits us to perform numerical calculations in comparison with the expression derived by Ciattoni et al. and with the direct numerical integration of the Rayleigh formula. It is found that as usual the use of expansion of vectorial Rayleigh diffraction integral is sufficient to provide satisfactory numerical results as compared with the direct integration of the Rayleigh formula. The above two analytical expressions are valid under certain conditions, however both are applicable in the far field.     

α-Fe2O3-In2O3 mixed oxide nanoparticles synthesized under hydrothermal supercritical conditions

α-Fe₂O₃-In₂O₃ mixed oxide nanoparticles system has been synthesized by hydrothermal supercritical and postannealing route, starting with (1−x)Fe(NO₃)₃·9H₂O·xIn(NO₃)₃·5H₂O aqueous solution (x=0-1). X-ray diffraction and Mössbauer spectroscopy have been used to study the phase structure and substitutions in the nanosized samples. The concentration regions for the existence of the solid solutions in the α-Fe₂O₃-In₂O₃ nanoparticle system together with the solubility limits of In³⁺ ions in the hematite lattice and of Fe³⁺ ions in the cubic In₂O₃ structure have been evidenced. In general, the substitution level is considerably lower than the nominal concentration x. A justification of the processes leading to the formation of iron and indium phases in the investigated supercritical hydrothermal system has been given.     

Application of the Volterra filter in experimental diffraction data processing

The effective signal in x-ray diffraction analysis of material properties often contains high frequency (noise) and low frequency (trend) components as additive parts. It is necessary to extract the effective signal from the noise to ensure high quality of signal processing. Digital filters of Volterra type are proposed for filtering purposes and a comparison of Volterra filtration implemented on x-ray diffraction data versus results from a set of other digital filters is given.     

Measurement of wire diameter by optical diffraction

A combined interference and diffraction pattern, in the form of equidistant interference fringes, resulting from illuminating a vertical metallic wire by a laser beam is analyzed to measure the diameter of four standard wires. The diameters range from 170 to 450 μm. It is found that the error in the diameter measurements increases for small metallic wires and for small distances between the wire and the screen due to scattering effects. The intensity of the incident laser beam was controlled by a pair of sheet polaroids to minimize the scattered radiation. The used technique is highly sensitive, but requires controlled environmental conditions and absence of vibration effects. The expanded uncertainty for k=2 is calculated and found to decrease from U(D)=±1.45 μm for the wire of nominal diameter 170 μm to ±0.57 μm for the diameter 450 μm.     

Solid state phase equilibria in the Gd-Si-B system at 1270 K

Solid state phase equilibria in the ternary Gd-Si-B phase diagram have been proposed at 1270 K using X-ray diffraction, scanning electron microscopy and electron probe microanalysis. Prior to this work, the binary systems Gd-B, Gd-Si and Si-B have also been reinvestigated. The main characteristic of the ternary diagram is the occurrence of two new ternary compounds Gd₅Si₂B₈ and Gd₅Si₃B_0.64. The former crystallizes in tetragonal symmetry, space group P4/mbm with unit cell parameters a=7.2665(3), c=8.2229(7) Å, the second one presents hexagonal symmetry, space group P6₃/mcm with unit cell parameters a=8.5080(4),c=6.4141(2) Å. The X-ray structures of the two structurally related phases Gd₅Si₃B_0.64 and host binary Gd₅Si₃ have been refined from three-dimensional single-crystal intensity data to the final R values of 0.036 (R_w=0.046) and 0.046 (R_w=0.055) for 457 and 401 reflections, respectively with [F>4σ(F)]. Both structures exhibit the Mn₅Si₃-type structure, with in addition for Gd₅Si₃B_0.64 a partial occupancy by boron of the normally vacant interstitial site at the center of the Gd₆ octahedron, which corresponds to the origin of the unit cell. Bonding between the interstitial boron atoms and the gadolinium ones forming the Gd₆B polyhedra is indicated by the decrease in the corresponding Gd-Gd distances and consequently in the unit cell volume. Finally, the Gd-Si-B phase diagram is compared with the previously reported Er-Si-B, at 1070 K.     

Structure–electrical property study of anisotropic polyaniline films

The relationships of the structure and electrical properties of anisotropic HCl‐doped polyaniline (PANI) films cast from N,N′‐dimethylpropylene urea (DMPU) solutions and stretched to different draw ratios were studied. The anisotropic structure of the stretched PANI films was examined by X‐ray diffraction, near‐infrared wave‐guide coupling, and polarized infrared measurements. The PANI emeraldine base (EB) films cast from DMPU solutions had a single‐phase noncrystalline structure, and stretching of the films did not cause crystallization to occur. The transition moment angles of two weakly absorbing infrared bands were determined, and the Hermans' orientation functions for the PANI EB films were calculated. The PANI films were then doped with HCl, and the electrical properties were determined by impedance spectroscopy. With a specially designed test fixture, the in‐plane and through‐plane impedance was obtained. The conductivity along the stretch direction increased with orientation. The in‐plane conductivity was significantly higher than the through‐plane conductivity. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 823–841, 2003     

CsBr高压X光研究

 采用同步辐射X光源和能散法，对CsBr粉末样品进行高压原位X光衍射实验。由金刚石对顶压砧高压装置（DAC）产生高压，用已知状态方程的Pt粉末作内标，由Pt的衍射数据确定样品压力，最高压力达64.4 GPa。实验结果表明：室温常压下原始CsBr样品是具有简单立方结构的晶体，其晶格常数α＝0.428 5 nm。高压下CsBr的结构有所变化，在51.3~58.4 GPa的压力范围内，(110)线和(211)线发生劈裂，从而形成了四方相。