Preparation of Nd-doped BiFeO3 films and their electrical properties

The Nd-doped BiFeO₃ thin films were prepared on SnO₂(FTO) substrates spin-coated by the sol–gel method using Nd(NO₃)₃·6H₂O, Fe(NO₃)₃·9H₂O and Bi(NO₃)₃·5H₂O as raw materials. The microstructure and electric properties of the BiFeO₃ thin films were characterized and tested. The results indicate that the diffraction peak of the Nd-doped BiFeO₃ films is shifted towards right as the doping amounts are increased. The structure is transformed from the rhombohedral to pseudotetragonal phase. The crystal grain is changed from an elliptical to irregular polyhedron. Structure transition occurring in the Bi_0.85Nd_0.15FeO₃ films gives rise to the largest Pr of 64 μC/cm². The leakage conductance of the Nd doped thin films is reduced. The dielectric constant and dielectric loss of Bi_0.85Nd_0.15FeO₃ thin film at 10 kHz are 190 and 0.017 respectively.     

Electroluminescence properties of In-doped Zn2SiO4 thin films prepared by sol–gel process

The effect of In doping on the electroluminescence (EL) properties of Zn₂SiO₄:In thin films was investigated. In-doped Zn₂SiO₄ thin films were deposited on BaTiO₃ substrates and their EL properties were characterized in this study. X-ray powder diffraction patterns of In-doped Zn₂SiO₄ powders revealed a single phase of Zn₂SiO₄ for In concentrations up to approximately 1.5 mol%, whereas a secondary phase of In₂O₃ was observed for In concentrations in the range of 2–10 mol%. The maximum luminance of thin film electroluminescent (TFEL) devices varied significantly with the amount of In doping. The highest luminance with blue emission was obtained when 2 mol% In was doped. The blue emission of In-doped Zn₂SiO₄ thin film may be related to the In substitution for Zn. The 2 mol% In-doped Zn₂SiO₄ thin film exhibited blue emission with CIE color coordinates of x=0.208 and y=0.086.     

膜系光谱系数对膜层参数的一阶和二阶偏导数的计算模型

为了寻找一种膜系深入分析与设计的有力辅助计算工具,从光学薄膜光谱系数的矩阵计算理论出发,基于对矩阵求迹运算的巧妙运用,从数学上建立了准确计算膜系光谱系数关于膜层几何厚度、实际折射率和消光系数等膜层参数的一阶和二阶偏导数的解析模型。这一偏导数计算模型物理上与矩阵理论具有一致的通用性和普适性,适用于任何各向同性的均匀膜系统。在数学上也严格成立,数值编程计算不存在差分近似,精度达到了计算机浮点运算的极限精度。而且算法运算费时少,计算速度快,取得了高度准确性和便于实时化的双重优越性能,非常有利于应用于膜系设计领域来提高膜层数较大时的设计速度和效率。同时,这一模型能非常便捷和准确地给出膜系许多实用的导数信息,对膜系分析、测量和膜厚监控等领域中的相关应用具有重要的参考意义。     

Synchronization in evolving snowdrift game model

The interaction between the evolution of the game and the underlying network structure with evolving snowdrift game model is investigated. The constructed network follows a power-law degree distribution typically showing scale-free feature. The topological features of average path length, clustering coefficient, degree-degree correlations and the dynamical feature of synchronizability are studied. The synchronizability of the constructed networks changes by the interaction. It will converge to a certain value when sufficient new nodes are added. It is found that initial payoffs of nodes greatly affect the synchronizability. When initial payoffs for players are equal, low common initial payoffs may lead to more heterogeneity of the network and good synchronizability. When initial payoffs follow certain distributions, better synchronizability is obtained compared to equal initial payoff. The result is also true for phase synchronization of nonidentical oscillators.     

A study of the evaporative deposition process: Pipes and truncated transport dynamics

We consider contact line deposition of an evaporating thin drop. Following Dupont’s proposal (unpublished), we focus on transport dynamics truncated by a maximal concentration as the single deposition mechanism. The truncated transport process, formalized as the “pipe model”, admits a characteristic shock front that has a robust functional form and depends only on local hydrodynamic properties. By applying the pipe model, we solve the density profile in different asymptotic regimes. In particular, we find that near the contact line the density profile follows a scaling law that is proportional to the square root of the concentration ratio defined as the initial solute volume concentration divided by the maximal concentration. The maximal deposit density occurs at about 2/3 of the total drying time for uniform evaporation and 1/2 for diffusion-controlled evaporation. Away from the contact line, areal density decays exponentially with the radial distance to the power of -3 for the uniform evaporation and -7 for the diffusion-controlled evaporation.     

Nanoscale formation mechanism of conducting filaments in NiO thin films

We have studied the nanoscale electrical properties of NiO thin films by using conducting atomic force microscopy (CAFM) to understand the mechanism of resistance change of the NiO thin films as we changed the applied voltage. We observed that inhomogeneous conducting filaments were generated by external voltage bias; in addition, some of the inhomogeneous conducting filaments were durable while some of them were not, and they disappeared. We deduced that the resistance change of the NiO thin films was related to inhomogeneous filamentary conducting paths generated by both Ni ions in thermodynamically unstable NiO and the existence of conducting filament segments generated by high voltage bias.     

Structural and physical properties of ZnO:Al films grown on glass by direct current magnetron sputtering with the oblique target

ZnO:Al films were deposited on glass substrates at 300 K and 673 K by direct current magnetron sputtering with the oblique target. The Ar pressure was adjusted to 0.4 Pa and 1.2 Pa, respectively. All the films have a wurtzite structure and grow with a c-axis orientation in the film growth direction. The films grow mainly with columnar grains perpendicular to the substrate and some granular grains also exist in the films. The film deposited at 673 K and 0.4 Pa has the largest grains whereas that prepared at 300 K and 0.4 Pa consists of the smallest grains and is porous. The films exhibit an n-type semiconducting behavior at room temperature. The ZnO:Al film deposited at 673 K and 0.4 Pa has the lowest resistivity (3.40 × 10⁻³ Ω cm), the highest free electron concentration (4.63 × 10²⁰ cm⁻³) and a moderate Hall mobility (4.0 cm² V⁻¹ s⁻¹). The film deposited at 300 K and 0.4 Pa has the highest resistivity and the lowest free electron concentration and Hall mobility. A temperature dependence of the resistivity reveals that the carrier transport mechanism is Mott’s variable range hopping in the temperature region below 100 K and thermally activated band conduction above 215 K. The activation energy for the film deposited at 300 K and 0.4 Pa is 41 meV and that for the other films is about 35 meV. All the films have an average optical transmittance of over 85% in the visible wavelength range. The absorption edge of the film deposited at 300 K and 0.4 Pa shifts to the longer wavelength (redshift) relative to the films prepared under the other conditions.     

Fabrication of 2D–3D photonic crystal heterostructures by glancing angle deposition

We fabricate 2D–3D photonic crystal heterostructures based on the silicon [001]-diamond:1 square spiral geometry using glancing angle deposition. We compare the normal incidence reflection properties of the fabricated 2D–3D heterostructures to simulated spectra generated using finite-difference time-domain calculations. Reflection peaks are observed, resulting from the presence of a photonic band gap, and defect modes are created by the 2D layer. Deterioration of the reflectance peaks with increased number of vertical spiral periods is observed. A series of square spiral structures are fabricated with a varying number of vertical periods to quantify the degradation of reflection peaks. At normal light incidence, a maximum reflection peak is observed from the film with three vertical periods. Beyond three spiral rotations, deterioration of the substrate-plane periodicity causes scattering losses.     

柔性基底红外波段左手材料制备及光学特性

采用平板电极化学电沉积的方法,通过调节实验参量,在柔性ITO导电薄膜基底上制备了尺度与红外波长匹配、结构单元大小不等、排列无序的银树枝状结构.通过调节聚乙二醇-20000浓度可以很好地调控银树枝状结构单元的形貌和尺寸,研究发现,在一定范围内增加电解液中的聚乙二醇-20000浓度,可在基底上形成分布较密、分枝较细、分枝级数较高的银树枝状结构单元.通过在银树枝状结构表面涂覆一定厚度的聚乙烯醇作为绝缘层,组装成了柔性三明治结构复合材料,测试得到样品在红外波段的多通带透射谱,平板聚焦实验进一步验证了样品的左手效应.     

多功能抗激光损伤高反射膜

为了能同时满足半导体激光器和YAG激光器对薄膜的特殊要求,在分析高反射膜理论的基础上,选取TiO2和SiO2为高、低折射率材料镀制了周期性多层介质高反射膜。研究了材料的光学及机械特性,重点解决了薄膜的消偏振和抗激光损伤问题。实验采用电子束真空镀膜并加以考夫曼离子源辅助沉积,利用TFC软件进行膜系设计,通过调整镀膜工艺参数和监控方法,在10mm×1．8mm的K9基底上镀制了符合要求的高反射膜,结果表明,当激光以45°入射时,薄膜在900～1100nm的P光与s光的反射率均大于99．95％。所制备的高反射膜性能稳定,抗激光损伤阈值高,能同时满足两种激光器的使用要求。