Cr掺杂对Nd0.7Sr0.3MnO3电磁性质的影响

我们对多晶样品Nd0.7Sr0.3Mn1-xCrxO3(x≤0.30)进行了X射线衍射谱、电阻温度关系和磁化强度测量.实验发现:随Cr掺杂量的增加,样品的电阻率变大,电阻峰温度和居里温度降低,这是由Cr的介入弱化了双交换作用所致;在x=0.10附近,电阻出现了双峰现象,在其M~T上没有发现与低温峰对应的磁性异常;在锰位磁矩与Cr含量的关系中发现,Cr掺杂对样品的磁性几乎无贡献;通过分析,我们用相分离的图象解释了有关的现象.     

液-固色谱流动相体积分数层次结构模型与保留值的关系

用液-固色谱流动相"假定"的体积分数层次结构模型,可得到质点团溶解溶质时的体积分数,进而得到共溶剂中溶质的溶解度、固定相上的溶质吸附量,从而推导出多元流动相组成与溶质保留值的关系.如三元流动相与溶质保留值的关联式为:lnk'=φB3lnk'B3 φB2lnk'B2 φB1lnk'B1 φB1(φB20.5 φB30.5)ln(q)(外Ⅱ) φB30.5φB21.0φB11.5ln(q)(外Ⅰ),经实验数据拟合,本式较其他关联式略胜一筹.     

液体电阻率测量装置的设计与制作

针对液体本身物理性质复杂、电阻率难以测量的问题,本文设计了一种新型液体电阻率测量装置.为有效采集被测对象的信息,对容器结构进行了巧妙设计,创新性地实现了石墨电极与容器一体化,提高了测量精度;利用传感技术采集电压、电流信号并将数据传入单片机,经单片机运算后通过液晶屏实时显示电阻率,具有快捷、准确测量的优点,在教学科研方面有一定实用价值.     

PTC特性的复合导电体系中炭粒子分布的逾渗模型与电阻率的计算

综述了炭黑填充型导电高分子复合体系的几种导电理论；讨论了导电载流子分布的各种假说及模型；比较了不同模型的理论预测与实验结果的差异性。     

Novel correlations between the critical constants of the noble gases

For any particular fluid, the set of three critical constants (CC) – pressure P_c, temperature T_c and molar volume V_c – has a central importance in defining the physical behaviour of the fluid in the gas and liquid states. However, little attention seems to have been paid in the past to the relations between the CC of different substances. In the present paper, some simple and apparently novel relations have been found between the three CC for the set of four noble gases: Ne, Ar, Kr, Xe. Defining the critical quotient Q_c ≡ RT_c/P_c (where R is the Gas Constant) the correlations may be summarised by the dual equation: (V_c/cm³ mol⁻¹) = 27 + 0.31 (T_c/K) = 3.3 + 0.280 (Q_c/cm³ mol⁻¹), which describes the CC data for the quartet Ne–Xe with an average uncertainty of 0.5%. Regarding the other two noble gases, the two isotopes of the lightest member, ³He and ⁴He, show the deviations from these relations that are expected from quantal effects and their low molar masses; while for the heaviest member, Rn, the correlations enable a value of 145(5) cm³ mol⁻¹ to be estimated for V_c that is not otherwise well defined in the literature. By contrast, and contrary to the general assumption, the second lightest member, Ne, apparently does not show appreciable quantal effects in the area, so that Ne–Xe may be considered together as a group. These correlations are compared with the behaviour of a selection of polyatomic fluids; in these comparisons, the NG dual correlation equation provides a reference line defining the presumed simplest behaviour. This and related areas show a “Residual Volume Effect”, in that extrapolating the equivalent temperature and energy parameters to zero for the state of zero-mass point particles, referred to here as the hypothetical element zeronium (Ze), the system in each case still has a finite intercept; this intercept amounts to essentially 34% of the average volume for the present quartet Ne–Xe, rather than the zero volume expected for this condition.     

萘磺酸掺杂对纳米管结构聚苯胺低温电阻率的影响

通过研究用自组装法制备的萘磺酸掺杂的纳米管结构聚苯胺(苯胺与萘磺酸的摩尔比分别为1∶025,1∶05,1∶1,1∶2,1∶3)的电阻率温度依赖关系(测量温区为80—300K),仔细分析聚苯胺的结构形貌特征,提出了变程跳跃隧道穿透混合模型:认为在萘磺酸掺杂的纳米管结构聚苯胺样品中,跳跃和隧穿两种机制同时起作用,载流子沿纳米管传导是变程跳跃过程起主要作用,而载流子在纳米管之间的传导是隧穿过程起主要作用.实验结果表明,不同浓度的萘磺酸掺杂对样品的低温电阻率的影响很大,随着掺杂浓度增加,载流子传导所需克服的能垒C0迅速减小,当掺杂接近饱和时,C0不再减小.实验中还研究了不同形貌对电阻率的影响,结果表明样品中纳米管所占比例的增大有利于载流子传导 关键词： 聚苯胺 纳米管 低温电阻率     

矩形微槽道纳米流体饱和沸腾临界热流密度特性

针对纳米流体在微小尺度传热领域的应用,在常压下对微槽道中纳米流体的流动沸腾临界热流密度进行实验研究。分别以体积浓度为0.2%、0.5%的水基Al2O3纳米流体为工质进行试验,研究不同质量流速、槽道尺寸以及体积浓度等因素对沸腾CHF的影响。对比水为工质实验结果,表明:槽道尺寸、质量流速对于水-Al2O3纳米流体和纯水的CHF影响一致。其它参数一定的工况下,纳米流体CHF比纯水大,且随着纳米流体体积浓度增大,出口壁面过热度会增大。最后介绍一个微槽道沸腾CHF的预测模型,在评价其不足的基础上提出一个关于CHF的预测公式,与实验数据进行对比,验证该公式的适用性。     

高温无铅BaTiO_3-(Bi_(1/2)Na_(1/2))TiO_3正温度系数电阻陶瓷阻抗和介电谱分析

采用固相反应法制备了Y2O3施主掺杂的92 mol%BaTiO3-8 mol%(Bi1/2Na1/2)TiO3(BBNT8)高温无铅正温度系数电阻(positive temperature coe?cient resistivity,PTCR)陶瓷.利用透射电镜观察材料的显微结构,发现陶瓷的显微结构主要包括晶粒和晶界两部分,观察不到明显的壳层结构.进一步利用交流阻抗谱研究了陶瓷的宏观电学性能,发现陶瓷的总电阻是晶粒和晶界两部分的贡献,而晶粒电阻很小,在居里温度以上变化不大,材料的PTCR效应主要是晶界部分的贡献.当温度高于居里温度时,随着温度的升高,晶界介电常数逐渐减小,导致势垒增加,晶界电阻增大,从而产生正温度系数效应.最后,通过测试材料的介电频谱特性,研究计算了陶瓷的室温电阻率.     

黏滞等离子体中双撕裂模不稳定性的数值模拟研究

本文采用磁流体力学模型,数值研究了平板位形下双撕裂模线性增长率关于等离子体电阻η和黏滞v的定标关系.结果表明,对于有理面间距较大的情况,线性增长率关于电阻和黏滞的指数定标率随着黏滞的增加逐渐由γ∝ η3/5v0的定标变化到γ∝η5/6v-1/6的定标;而对于有理面间距较小的情况,其指数定标率随着黏性的增加从γ∝η 1/3 v0的定标逐渐变化到γ∝η2/3v-1/3的定标.本文还给出了初始阶段对称的双撕裂模的非线性演化,发现在非线性阶段对称的双撕裂模将转化为反对称的双撕裂模,并解释了相应的物理机理.     

Recovery of low temperature electron irradiation-induced damage in n-type gaas

Undoped n-type GaAa was irradiated near 5 and 77 °K with electrons having incident energies between 0.46 and 1.30 MeV. The recovery of the electrical resistivity and the Hall coefficient upon annealing from 4 to 520 °K was monitored. Changes which occurred upon annealing below 200 °K could be reversed by ionizing radiation. A small amount of irreversible ionization-induced recovery was observed after irradiation near 5 °K. Major irreversible recovery stages were centered near 235 (stage I), 280 (stage II) and 520 °K (stage III). Recovery in stage I and II obeyed first order kinetics. The activation energies of stages I and II were determined as 0.72 and 0.83 eV, respectively. The carrier concentration changes per unit irradiation dose corresponding to the three recovery stages differed in their energy dependence indicating that the defects which are removed in stage III have the lowest threshold energy. The carrier concentration changes per unit irradiation dose corresponding to stages I and III were higher for irradiation near 5 °K than for irradiation near 77 °K.