The covalent functionalization of few-layered MoTe2 thin films with iodonium salts

Covalent functionalization of 2D materials provides a tailored approach towards tuning of their chemical, optical, and electronic properties making the search for new ways to graft small molecules important. Herein, the reaction with (3,5-bis(trifluoromethyl)phenyl)iodonium salt is revealed as an effective strategy for functionalization of MoTe₂ thin films. Upon decomposition of the salt, the generated radicals graft covalently as aryl-(CF₃)₂ groups at the surface of both metallic (1T’) and semiconducting (2H) polymorphs of MoTe₂. Remarkably, the reactivity of the salt is governed by the electronic structure of the given polymorph. While the functionalization of the metallic MoTe₂ occurs spontaneously, the semiconducting MoTe₂ requires activation by light. The reaction proceeds with the elimination of oxide from the original films yielding the functionalized products that remain protected in ambient conditions, presenting a viable solution to the ageing of MoTe₂ in air.     

Recommended sublimation pressure and enthalpy of benzene

Recommended vapor pressures of solid benzene (CAS Registry Number: 71-43-2) which are consistent with thermodynamically related crystalline and ideal-gas heat capacities as well as with properties of the liquid phase at the triple point temperature (vapor pressure, enthalpy of vaporization) were established. The recommended data were developed by a multi-property simultaneous correlation of vapor pressures and related thermal data. Vapor pressures measured in this work using the static method in the temperature range from 233 K to 260 K, covering pressure range from 99 Pa to 1230 Pa, were included in the simultaneous correlation. The enthalpy of sublimation was established with uncertainty significantly lower than the previously recommended values.     

Study of Ge epitaxial growth on Si substrates by cluster beam deposition

Ge epitaxial layers with reasonable quality were grown on Si (1 1 1) substrates by cluster beam deposition (CBD) process. Molecular dynamics study of the low energy Ge clusters deposition process utilizing the Stillinger–Weber two- and three-body interaction potentials was carried out to compare the experimental results. Both experimental and simulation results prove that the substrate temperature plays a dominant role in the epitaxial growth of Ge films in CBD process. The influence mechanisms of temperature are discussed.     

An algorithm based on resolvent operators for solving variational inequalities in Hilbert spaces

In this paper, a new monotonicity, M$M$-monotonicity, is introduced, and the resolvent operator of an M$M$-monotone operator is proved to be single valued and Lipschitz continuous. With the help of the resolvent operator, an equivalence between the variational inequality VI(C,F+G)$(C,F+G)$ and the fixed point problem of a nonexpansive mapping is established. A proximal point algorithm is constructed to solve the fixed point problem, which is proved to have a global convergence under the condition that F$F$ in the VI problem is strongly monotone and Lipschitz continuous. Furthermore, a convergent path Newton method, which is based on the assumption that the projection mapping _∏C(⋅)${\prod }_C(\cdot )$ is semismooth, is given for calculating ε$\epsilon$-solutions to the sequence of fixed point problems, enabling the proximal point algorithm to be implementable.     

Gradient estimates in Orlicz spaces for quasilinear elliptic equation

In this paper we generalize classical L^q$L^q$, q≥p$q\ge p$, estimates of the gradient to the Orlicz space for weak solutions of quasilinear elliptic equations of p-Laplacian type.