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111.
The energies of combustion in fluorine of gallium nitride and indium nitride in wurzite crystalline structure have been measured in a two-compartment calorimetric bomb, and new standard molar enthalpies of formation have been calculated: ΔfHm0(GaN(cr) 298.15 K)= –(163.7±4.2) kJ mol–1 and ΔfHm0(InN(cr) 298.15 K)= –(146.5±4.6) kJ mol–1 . Comparison with the recommended values of the ΔfHm0 nitrides from the literature is also presented.  相似文献   
112.
Six new compounds in the A2LiMS4 (A=K, Rb, Cs; M=V, Nb, Ta) family, namely K2LiVS4, Rb2LiVS4, Cs2LiVS4, Rb2LiNbS4, Cs2LiNbS4, and Rb2LiTaS4, have been synthesized by the reactions of the elements in Li2S/S/A2S3 (A=K, Rb, Cs) fluxes at 773 K. The A and M atoms play a role in the coordination environment of the Li atoms, leading to different crystal structures. Coordination numbers of Li atoms are five in K2LiVS4, four in A2LiVS4 (A=Rb, Cs) and Cs2LiNbS4, and both four and five in Rb2LiMS4 (M=Nb, Ta). The A2LiVS4 (A=Rb, Cs) structure comprises one-dimensional chains of tetrahedra. The Rb2LiMS4 (M=Nb, Ta) structure is composed of two-dimensional layers. The Cs2LiNbS4 structure contains one-dimensional chains that are related to the Rb2LiMS4 layers. The K2LiVS4 structure contains a different kind of layer.  相似文献   
113.
The two hitherto unknown compounds Bi14P4O31 and Bi50V4O85 were prepared by the direct solid-state reaction of Bi2O3 and (NH4)H2PO4 or V2O5, respectively. Bi14P4O31 crystallizes in a C-centred monoclinic symmetry (C2/c space group) with the unit-cell parameters: , , and β=93.63(1)° (Z=16). The symmetry of Bi50V4O85 is also monoclinic (I2/m space group) with lattice parameters of , , and β=90.14(1)° (Z=2). Both structures correspond to a fluorite-type superstructure where the Bi and P or V atoms are ordered in the framework. An idealized structural model is proposed where the structures result of the stacking of mixed atomic layers of composition [Bi14M4O31] and [Bi18O27] respectively. This new family can be formulated Bi18−4mM4mO27+4m with M=P, V and where the parameter m (0?m?1) represents the ratio of the number of [Bi14M4O31] layers to the total number of layers in the sequence. Bi14P4O31 corresponds to m=1 when Bi50V8O85 corresponds to m=1/3. In this last case, the structural sequence is simply one [Bi14V4O31] layer to two [Bi18O27] layers. As predicted by the proposed structural building principle, Bi14P4O31 is not a good ionic conductor. The conductivity at 650 °C is 4 orders of magnitude lower from those found in Bi46M8O89 (M=P, V) (m=2/3) and Bi50V4O85 (m=1/3).  相似文献   
114.
测定了24例甲亢治疗前后及30例健康对照的头发锌、硒、钒、锂及锗的含量,发现未治疗的甲亢头发锌、硒、钒、锂及锗含量较对照组低,Zn、Se、Li、Ge,P<0.001,V,P<0.01.甲亢经6~12周抗甲亢药物治疗后.头发中5种元素均较治疗前上升(P<0.001),且头发钒和锂含量治疗后已达到对照组水平,V,P>0.2,Li,P>0.1,而头发锌、晒及锗含量治疗后仍低于对照组(P<0 .001).结论:甲亢头发锌、硒、钒、锂及锗含量降低.经6~12周抗甲亢治疗可使头发钒及锂含量恢复正常水平,而其余3种元素则可能需要更长时间的抗甲亢治疗才能恢复至正常水平。  相似文献   
115.
The geometries of the 2-aminoethyl cation and the isomeric protonated aziridine have been optimized using ab initio molecular orbital calculations employing the split-valence shell 4-31G basis set. The protonated aziridine is computed to be the more stable ion by 46.5 kcal/mole (4-31G level) and 44.9 kcal/mole (double-zeta basis set). The profile to interconversion is found to have a barrier of less than 15 kcal/mole (relative to the 2-aminoethyl cation) and this profile is compared with those computed for the similar ions XCH2CH 2 + where X=OH, F, SH and Cl.  相似文献   
116.
The X-ray crystal structures of (NH4)2(15-crown-5)3[Cu(mnt)2] (1) and (NH4)2(benzo-15-crown-5)4- [Cu(mnt)2]·0.5H2O (2) were determined. Two single crystals are composed of distinct structures of ammonium-crown ether supramolecular cation and [Cu(mnt)2]2? anion. The triple-decker dication in complex 1 and a sandwich dimmer in complex 2 were observed. X-Band EPR studies on the single crystals of both complex 1 and complex 2 have been carried out at room temperature, which revealed that complex 2 showed a perfect hyperfine structure of Cu whereas that of complex 1 could not be observed. The principal values and direction cosines of the principal axes of the g and A tensors were computed by a least-squares fitting procedure. The spin density of Cu(II) was estimated according to the principal values of the A tensors and compared well with the results calculated based on DFT method.  相似文献   
117.
The electrochemistry of monoclinic and tetragonal vanadium-doped zirconias (VZrO2), prepared from gel precursors with vanadium loadings ranging from 0.5 to 15 mol%, has been studied using abrasive-conditioned graphite/polyester composite electrodes immersed in aqueous HCl and HClO4 solutions. Isolated vanadium centers form a solid solution in the zirconia lattice with a solubility limit close to 5 mol%. Above 5 mol%, finely dispersed V2O5 is formed. Vanadium centers located at the boundary sites of the zirconia lattice display successive one-electron transfer processes near to +0.25 and +0.10 V vs. SCE, whereas finely dispersed V2O5 yields three successive reduction processes at +0.46, +0.30, and +0.16 V vs. SCE. Electrochemical data indicate the presence of both V5+ and V4+ centers in the lattice of monoclinic and tetragonal zirconias, the V5+/V4+ ratio decreasing as the vanadium loading increases. Electronic Publication  相似文献   
118.
Reactions of tris(pentafluorophenyl)silanes RSi(C6F5)3 with salicylaldehyde and secondary amines were studied. The reactions afforded α-pentafluorophenyl-substituted amines. Silanes RSi(C6F5)3 (R = Me, Ph, C6F5, CH2CH=CH2, and CH=CH2) were found to be efficient reagents for transfer of the C6F5 group to the iminium cation generated from salicylaldehyde and amine. However, tris(pentafluorophenyl)phenylethynyl-and tris(pentafluorophenyl)silanes were not able to serve as a source of a fluorinated substituent because of competitive transfer of acetylenide fragment or hydride. Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 3, pp. 498–503, March, 2006.  相似文献   
119.
阳离子交换树脂的有机催化进展   总被引:13,自引:0,他引:13  
冯新亮  管传金  赵成学 《有机化学》2003,23(12):1348-1355
综述了聚苯乙烯型磺酸树脂、全氟磺酸树脂Nafion及崭新的Nafion/siO_2复 合催化剂在有机合成中应用的最新进展.  相似文献   
120.
Nitrogen ion implantation (24 keV, 4.6 × 1017 cm?2) into (100) a p‐type silicon wafer material and a subsequent electron beam annealing at 1100 °C for 15 s under high vacuum conditions leads to the formation of an uneven surface in the implanted region caused by nitrogen bubbles beneath the surface. Annealing at 1200 °C for 300 s results in surface cavities with a mean diameter of 350 nm and a surface coverage of 3–4% and an average depth of ~60 nm. Nuclear reaction analysis reveals that the nitrogen concentration in the as‐implanted state exceeds 57 at%, the value of stoichiometric Si3N4. Annealing at 1100 °C for 15 s slightly reduces the nitrogen peak concentration, whereas annealing at 1200 °C for 300 s induces a significant alteration to the shape of the nitrogen depth profile coupled with the lowering of the concentration close to the stoichiometry of Si3N4. The results present a new method of producing sub‐micrometre cavities embedded in a thin silicon nitride film on wafer silicon which may lead to novel micro‐electronic and biotechnology applications. Copyright © 2007 John Wiley & Sons, Ltd.  相似文献   
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