Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy

A large planar tungsten carbide (WC) Schottky diode on p-type homoepitaxial diamond was mainly investigated on a microscopic level by atomic force microscopy (AFM) and conducting probe atomic force microscopy (CP-AFM), allowing simultaneous topographic and local electrical resistance imaging measurements. These techniques revealed the existence of a specific microstructure on the WC Schottky contact consisting of electrically insulating islands surrounded by conductive paths. The islands are found to be insulating in the whole range of explored bias [−5 V, +5 V], whereas the current flowing between the islands is 1000 times lower at a reverse bias of −5 V than at a forward bias of +5 V, in agreement with the rectifying ratio found from macroscopic current–voltage (I–V) measurements. CP-AFM provides a prospective imaging tool which is well suited for analyzing the local electrical properties and instabilities of Schottky junctions.     

Ultra-thin film growth of titanium dioxide on W(1 0 0)

We have employed low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy to follow the epitaxial growth of thin films of TiO₂ on W(1 0 0). The films were grown both by metal vapour deposition of titanium onto the substrate in UHV with subsequent annealing in a low partial pressure of oxygen, and by metal vapour deposition in a low partial pressure of oxygen. LEED patterns showed the characteristic patterns of (1 1 0) oriented rutile. A systematic spot splitting was observed and attributed to a stepped surface. The calculated step height was found to be in good agreement with that expected for rutile TiO₂(1 1 0), 3.3 Å. Titanium core level shifts were used to identify oxidation states as a function of film thickness allowing the interpretation in terms of a slightly sub-stoichiometric interface layer in contact with the substrate. In combination with the LEED patterns, the film structure is therefore determined to be (1 1 0) oriented rutile with a comparable level of stoichiometry to UHV prepared bulk crystals. The ordered step structure indicates considerable structural complexity of the surface.     

Growth and oxidation of Cr films on the W(1 0 0) surface

The growth and oxidation of Cr films on the W(1 0 0) surface have been studied with low energy electron microscopy (LEEM) and diffraction (LEED). Cr grows in a Stranski-Krastanov (SK) mode above about 550 K and in a kinetically limited layer-by-layer mode at lower temperature. Stress relief in the highly strained pseudomorphic (ps) Cr film appears to be achieved by the formation of (4 × 4) periodic inclusions during the growth of the third layer between 575 and 630 K and by growth morphological instabilities of the third layer at higher temperature. Kinetic or stress-induced roughening is observed at lower temperature. In the SK regime, three-dimensional (3D) Cr islands nucleate after the growth of three Cr layers. 3D island nucleation triggers dewetting of one layer from the surrounding Cr film. Thus, two ps Cr layers are thermodynamically stable. However, one and two layer ps Cr films are unstable during oxidation. 3D clusters, that produce complex diffraction features and are believed to be Cr₂O₃, are formed during oxidation of one Cr layer at elevated temperature, T ? 790 K. The single layer Cr film remains intact during oxidation at T ? 630 K. 3D bulk Cr clusters are formed predominantly during oxidation of two ps Cr layers.     

三山岛金矿控矿断层F1的力学性质及补强措施

作者以正在开采中的三山岛金矿采场为研究对象，分析矿区开采过程中的岩体结构特征及重力方向矿柱、护顶矿柱与控矿断层F1断层泥及其上覆岩体之间的关系和力学机制。通过试验研究了断层泥的物质成分和力学性质，总结了力学特性与断层泥厚度及含水量之间的关系。在此基础上提出锚固大于中倾角的结构面，提高结构面的抗滑阻力；增加含有高、陡倾角结构面矿柱的刚度等对矿柱的补强措施。对护顶矿柱提出预先锚固；分阶段开采的补强方法。在裂隙密集带设置排水设施，改善断层泥的赋存条件，提高它的力学性能。     

钨合金的冲击动力学性质及细微观结构的影响

简单介绍了钨合金(主要为W-Ni-Fe)的制备工艺和常用热处理方法,其后着重从动 态力学性能、剪切带的实验观察和研究、细微观结构对材料力学性能的影响等几方 面总结和评述了近年来针对钨合金取得的主要结果.并在文章的最后初步提出了有 前景的几个研究方向.     

微波消解-磷钼蓝分光光度法测定钨矿石中的磷含量

针对钨矿石中的微量元素磷,采用混合酸快速微波消解结合磷钼蓝分光光度法进行测定。经选择优化样品的微波消解和实验测定条件,结果表明:HCl+HNO3+HF的混合酸微波消解后的样品,在硫酸介质中,有钼酸铵存在时,用抗坏血酸将磷还原成磷钼蓝络合物,在825nm处比色测定。方法的加标回收率为98.9%~101.6%,结果准确可靠。硅在熔样过程中挥发除去不会干扰测定,砷会干扰实验,可在酸介质中加入碘化钾,使砷还原至低价而不干扰磷的测定。     

氧化钛负载脱硝催化剂的碱中毒过程：氧化钒的保留和氧化钨的牺牲

V2O5-WO3/TiO2催化剂目前已广泛用于电厂和工业锅炉燃烧废气脱硝,但燃烧原料煤及石油中含有的杂质元素碱金属与碱土金属元素可吸附在催化剂上,不仅会减少催化剂酸性位的数量,还会与催化活性元素结合生成惰性物种,导致催化剂失活。因此,已有许多有关钒钨钛催化剂碱中毒的研究,从催化剂的氧化还原能力、酸性位损失及表面孔结构等方面进行了讨论。但这些研究大多集中在碱中毒对活性组分V2O5的影响及中毒催化剂的活性变化,很少涉及催化剂中WO3的作用,也缺乏有关不同活性元素与钾盐反应的实验证据。本文采用过量浸渍法制备了不同钒和钨含量的钒钨钛催化剂,研究了氯化钾对其氨法选择性催化还原(NH3-SCR)活性的失活效应。利用感应耦合等离子体、N2吸附、拉曼光谱、H2程序升温还原、NH3吸附红外光谱和NH3氧化活性等手段对新鲜和中毒催化剂的性质进行了表征,特别探讨了V2O5和WO3对催化剂抗碱中毒能力的贡献。
　　催化剂活性测试结果表明, V2O5含量越高,活性温度窗口越宽,而且含有WO3的三元催化剂活性高于V2O5/TiO2二元催化剂。催化剂的BET比表面积和孔结构取决于TiO2载体,随活性组分配比变化不大,说明催化剂物理结构性质并非影响活性的主要因素。原位红外光谱及H2程序升温还原测试结果表明,随V2O5含量提高,催化剂表面Br?nsted酸性位数量及氧化还原能力提高。作为反应的主要活性物种, V2O5在碱中毒处理后变成惰性的偏钒酸钾KVO3,使催化剂中Br?nsted酸性位减少,热稳定性下降,并削弱了催化剂的氧化还原能力,因此低钒含量的催化剂容易严重中毒失活。在高钒负载量(3%)时,部分V2O5在碱中毒后得以保留,从而使催化剂保持了一定的脱硝催化活性。
　　另外, WO3能给催化剂表面提供热稳定的酸性位,虽然WO3自身的氧化还原能力差,但其能改善V2O5的分散性,从而提高V2O5-WO3/TiO2催化剂的活性。除此之外, WO3在催化剂碱中毒过程中还能扮演牺牲剂,与钾反应生成钨酸钾(K2WO4),即在V2O5与钾离子结合形成KVO3的同时,部分WO3也会与钾反应形成K2WO4,可以使三元催化剂保留更多的活性V物种。因此,在所研究的催化剂中,高钒负载量的V2O5-WO3/TiO2催化剂表现出最好的抗碱中毒能力。
　　活性影响因素分析表明,对于新鲜催化剂,其表面吸附的NH3量足够多,催化剂活性与表面酸性相关度不大,脱硝效率主要取决于催化剂的氧化还原能力。但是,对于碱中毒处理后的催化剂,其表面吸附NH3的能力大大削弱,这时脱硝效率除了受催化剂氧化还原能力影响,在很大程度上也依赖于催化剂的表面酸性。     

气基磁化焙烧回收包头稀土尾矿中铁的研究

试验采用磁化焙烧-磁选的方法来回收包头稀土尾矿中的Fe。考察了还原球团的粒径、焙烧温度、还原气体的成分、还原气气体流量、焙烧时间对于磁化焙烧回收Fe的影响。在焙烧温度为580℃,CO与CO2的浓度比为40∶60,还原气体气流量为1.2 L·min-1,焙烧时间为60 min的条件下对球团进行磁化焙烧,并将焙烧后的球团进行磨矿,使得-200目的物料占物料总重量的95%。将磨矿后的物料置于磁场强度为233 k A·m-1的磁选管中进行磁选,可以得到品位为60%左右的铁精矿,其铁回收率达到70%左右。     

EDTA快速滴定法测定矿石中的氧化铝

介绍一种利用二乙基二硫代氨基甲酸钠分离后以EDTA滴定测定矿石中铝的新方法。锰矿样品用Na OH,Na_3PO_4和Na_2O_2混合熔剂熔融,消除Ca,Mg,Ti的干扰,用含无水乙醇的热水浸取,其中的Mn变为Mn O2沉淀析出,干过滤,定容。将滤液中和至弱酸性,加入二乙基二硫代氨基甲酸钠,一些金属阳离子形成难溶水的络合物而分离,再次过滤,一定量的滤液与过量的EDTA标准溶液反应,用锌标准溶液滴定剩余的EDTA,即得氧化铝的含量。该法采用二甲酚橙为指示剂,同时加入少量氯化十六烷基吡啶,滴定终点颜色突变明显,改善了测量精密度,操作易于掌握。样品测定结果的相对标准偏差为0.42%~1.08%(n=5),加标回收率为97.39%~99.94%。分析过程只需滴定一次,且不使用含铅、铜、氟溶液,方法便捷环保。