ZnSe/SiO2半导体量子点玻璃的光谱特性

对采用溶胶凝胶法制备的ZnSe/SiO2半导体量子点玻璃的光谱性质进行了测试分析.UV-Vis透射光谱中观察到光吸收边相对于体相半导体有明显蓝移.稳态发射光谱(PL)中观察到ZnSe纳米晶体的位于蓝区的基本呈高斯分布的弱的最低激子发射峰、强而宽的表面态发光带以及对应杂质能级的三个锐峰发光.时间分辨荧光光谱(TRPL)中观察到发光效率高的最低激子发射峰,并测量其荧光衰减寿命,经尾部拟合为28.5 ps.同时,结合有效质量近似(EMA)模型,估计ZnSe纳米晶体的平均粒径介于2.45~3.60 nm之间,尺寸分布基本呈高斯型.     

飞秒时间分辨光抽运探测技术及进展

文章简要介绍了飞秒时间分辨光抽运探测技术以及作者所在实验室的最新研究进展．灵敏度和信噪比是实验中的重要参数，文章着重介绍了作者在这两方面的改进，从而可检测到更微弱信号，并降低了使用的激光功率．配合具有光学窗口的液氦低温系统，还可对更多领域的材料进行研究，其中包括高温超导、生物化学样品和纳米材料等，并可给出物质内部结构等方面的重要信息．     

Thin graphite overlayers: Graphene and alkali metal intercalation

Using LEED and angle resolved photoemission for characterisation we have prepared graphite overlayers with down to monolayer thickness by heating SiC crystals and monitored alkali metal intercalation for the multilayer films. The valence band structure of the monolayer is similar to that calculated for graphene though downshifted by around 0.8 eV and with a small gap at the zone corner. The shift suggests that the transport properties, which are of much present interest, are similar to that of a biased graphene sample. Upon alkali metal deposition the 3D character of the π states is lost and the resulting band structure becomes graphene like. A comparison with data obtained for ex situ prepared intercalation compounds indicates that the graphite film has converted to the stage 1 compounds C₈K or C₈Rb. Advantages with the present preparation method is that the graphite film can be recovered by desorbing small amounts of alkali metal and that the progress of compound formation can be monitored. The energy shifts measured after different deposits indicate that saturation is reached in three steps. Our interpretation is that in the first the alkali atoms are dispersed while the final steps are characterized by the formation of first one and then a second (2 × 2) ordered alkali metal layer adjacent to the uppermost carbon layer.     

ARPES and STS investigation of noble metal Shockley states: Confinement in vicinal Au(1 1 1) surfaces and self-organized nanostructures

Spectroscopic effects associated with the superperiodic surface structure have been observed in Au(1 1 1) vicinal surfaces and nanostructured systems. In the vicinal Au(23 23 21) surface, high resolution angle resolved photoemission spectroscopy shows the opening of several gaps in the surface band structure, whereas scanning tunneling spectroscopy reveals the energy dependence of the electronic density. These combined spectroscopic data allow to determine the reconstruction potential by deducing their first Fourier components. We also demonstrate that due to the peculiar growth on this Au vicinal surface, we can obtain a self-assembled superlattice of triangular Ag islands. The high ordering of the nanostructures leads to homogenous electronic properties.     

Side-hole to anti-hole conversion in time-resolved spectral hole burning of ruby: Long-lived spectral holes due to ground state level population storage

We report time-resolved transient spectral hole burning of Verneuil-grown 20 ppm and ca. 0.6 ppm ruby (Al₂O₃:Cr³⁺) in zero field and low magnetic fields B∥c at 4 K. The hole-burning spectroscopy of the 20 ppm sample implies relatively rapid cross relaxation in the ⁴A₂ ground state on the ∼1 ms timescale both in zero field and in low magnetic fields, B∥c, up to 0.2 T. In the 0.6 ppm sample, side-hole to anti-hole conversion is observed both in zero field and in low magnetic fields. This conversion is caused by population storage in ⁴A₂ ground state levels. Spin-lattice relaxation, on the 200 ms timescale, is directly observed from the time dependence of the resonant hole and anti holes in B∥c, consistent with a very low cross-relaxation rate. However, in zero field cross relaxation in the ⁴A₂ ground state is still a significant relaxation mechanism for the 0.6 ppm sample resulting in hole decay in ∼50 ms.     

Anisotropy of the angle resolved electron attenuation at crystal surfaces

Photoemission multiple scattering theory is used to describe the electron transport in the surface region of a crystal. Intensities of photoemission from core levels of atoms situated in subsurface atomic layers are calculated as a function of the emitter distance from the surface. The electron angle resolved attenuation length (ARAL) is extracted from the exponential fitting of the intensity decays of photoemission into different directions. Substantial anisotropy of the electron ARAL is found for the Cu(1 1 1) surface in Mg Kα photoexcitation of Cu 2p_3/2 levels and correlated with the orientation of highly packed atomic rows. Enhanced photoemission contributions from specific subsurface layers, caused by electron forward focusing effects, are reported.