碱土金属掺杂纳米TiO2催化剂的制备与光催化活性的评价

The nanometer TiO₂ were prepared by the hydrolyze-gel method and fellowed by doping alkaline-earth metals (Mg, Ca, Sr, Ba). XRD, SEM, diffuse reflection spectra were used to investigate their characteristices. The result indicates that the average particles size of the TiO₂ is about 80 nm and keep uniformity in distributing. The product was mainly anatase in 300～400 ℃ calcinations, the einstein shift of absorption spectrum was observed after doping the alkaline-earth metals. The best mole percentages of Mg, Ca, Sr and Ba are 0.5%, 1.0%, 1.5%, 1.5% respectively. Under the same reaction conditions, it is more effective to the UV-catalyed degradation reaction that the catalysts containing Mg and Ca were calcined at 300 ℃ for 1h or containing Sr and Ba were calcined at 400 ℃ for 1 h. The photocatalystic activity is considerably depondent on pH and the concentration of the oxidant. Using the sunlight to do the degradation experimental, the result also show that the doping catalysts has higher degradation efficiency than that of pure TiO₂.     

富锂掺杂Li1.06Co0.05Cr0.1Mn1.85O4的合成及电化学性能研究

锂离子电池具有比能量高、功率大、使用寿命长、无记忆效应、性能价格比高等优点,从而成为可充式电源的主要选择对象.锰由于资源丰富、价廉、环境友好等优点,使锰酸锂(LiMn2O4)成为最有希望取代钴酸锂的正极材料.但锰酸锂的放电容量相对较低,结构欠稳定,容量衰减严重,作为正极材料还无法与钴酸锂相比,近年来做了大量的研究工作以改善它的电化学性能[1～6].最近Youngjoon Shin等研究发现[7]用少量的Li与Ni共同替代LiMn2O4中的Mn得到的LiMn2-2yLiyNiyO4的电化学性能要优于单元素替代的LiMn2-xMxO4(M=Li,Cr,Fe,Co,Ni)的电化学性能.     

La-Ce对PbTiO3陶瓷气相扩渗生成La2Ti6O15和CeTi21O38的陶瓷材料及其电性能

报道了采用气相法对PbTiO3陶瓷扩渗La-Ce混合稀土元素的研究. 在气相扩渗过程中, La, Ce与PbTiO3陶瓷组元发生了复杂反应,生成了稀土化合物La2Ti6O15和CeTi21O38, 制备出未见报道的La2Ti6O15-CeTi21O38-PbTiO3陶瓷材料, 经测试其导电性能发生了十分显著的变化. La2Ti6O15-CeTi21O38-PbTiO3陶瓷材料的室温电阻率从2.0 ×1010??@m下降为0.248 ?@m,而且随着温度的变化, 晶粒电阻呈现明显的PTCR效应,而晶界电阻随着温度的升高,呈急剧连续降低状态,总电阻的变化规律与晶界电阻的变化相一致, 试样总电阻的PTCR效应已不存在, 近趋导体. 经XPS测试分析, 进一步证实了La2Ti6O15-CeTi21O38-PbTiO3陶瓷材料中铅、钛等元素均有变价, 因而导致了La2Ti6O15-CeTi21O38-PbTiO3陶瓷材料电阻率的降低, 测试结果还首次给出了La2Ti6O15-CeTi21O38-PbTiO3陶瓷材料中各元素结合能位置的峰值. TG-DTA热分析表明La2Ti6O15-CeTi21O38-PbTiO3陶瓷材料具有较好的高温热稳定性.     

镓在裸Si系和SiO2/Si系掺杂效应

Based on the diffusion action of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO_2/Si system is first presented in this paper ,the gallium doping effect in the two systems is analyzed theoretically. Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .     

钽离子掺杂对LiFePO4 / C物理和电化学性能的影响

采用PAM(聚丙烯酰胺)模板-溶胶凝胶法在惰性气氛下合成钽掺杂的LiFePO₄/C复合正极材料，考察了钽对目标化合物的物理和电化学性能的影响。研究结果表明，0.33C的电流下充放电时，掺杂前后第2个循环的放电容量分别为138.6 mAh·g^-1和155.5 mAh·g^-1，循环20次后容量为141 mAh·g^-1和156 mAh·g^-1。电化学交流阻抗表明，掺杂后的材料阻抗R_ct从180 Ω减小到120 Ω。振实密度比掺杂前提高0.312 g·cm^-3。     

掺溴聚-4-甲基-1-戊烯的合成研究

 液溴与聚-4-甲基-1-戊烯（PMP）的四氯化碳溶液反应，在光照条件下得到溴代PMP，通过红外与元素分析确证了其结构。并通过热重分析对其性能进行了初步的研究。研究发现，在光照条件下溴原子很容易与PMP中叔丁基上的氢原子发生取代反应，得到化学掺杂溴原子的聚合物。该聚合物在150℃以下比较稳定，在150℃以上就会失去HBr。采用此种方法，可得到掺杂均匀的低密度材料。     

铁掺杂PMP泡沫制备工艺研究

 以聚-4-甲基-1-戊烯为泡沫骨架，二茂铁为掺杂材料，通过热诱导倒相技术制备出铁掺杂聚合物泡沫。掺杂泡沫的实际密度均高于理论密度，且沿轴向从上至下逐渐增大。在理论密度不变的情况下，掺杂泡沫实际密度随掺杂元素原子百分含量的升高而呈降低趋势。与PMP泡沫相比，掺杂泡沫的孔洞直径分布变宽且网络骨架尺寸有变大的趋势。     

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.     

Synthesis and Characterization of Titanium-doped Ordered Mesoporous Alumina

Titanium-doped ordered mesoporous alumina with specific structural properties has been prepared by the evaporation induced self-assembly sol-gel method. The results show that the doped titanium helps to stabilize the ordered mesoporous alumina material without influencing the ordered mesoporosity. The textural properties of the obtained sample are related to the amount of doped titanium. When the molar ratio of aluminum to titanium(n(Al)/n(Ti)) is controlled as 10.2, the titanium-doped ordered mesoporous alumina exhibits high surface area(up to 218 m2 g-1), large pore volume(0.42 cm3 g-1) and narrow pore diameter(6.1 nm) after treating at 900 ℃, showing high thermal stability. Moreover, the obtained sample calcined at 900 ℃ still maintains ordered mesoporous structure and exhibits high thermal stability.