北京谱仪Ds物理研究新进展

简要介绍了北京谱仪Ｄｓ物理研究的背景,北京谱仪和北京正负电子地撞机已取得的几项物理结果的内容,及其对国际粒子物理研究的贡献。     

有机聚合物量子阱结构及其应用

讨论了有机聚合物量子阱结构的生长方法,特性及其在改善发光器件性能和发展电泵有机激光中的应用。     

瓦布贝母中一瓦布碱的2D NMR研究

从四川产家种贝母新种——瓦布贝母(Bulbus Fritillaria Wabuensis S.Y.Tang et S.C.Yueh)鳞茎中分离出一生物碱.经采用DEPT、¹H-¹HCOSY、¹³C-¹HCOSY MMR等多种技术对化学结构及构型进行了研究,确证该生物碱为西贝素-β-氮氧化物(imperialine-β-N-Oxide).     

三萜皂甙Tanguticoside A的NMR碳氢化学位移全指定

应用2D NMR技术如:DQF-COSY、HMQC、HMBC、ROESY,特别是HMQC-TOCSY技术,对三萜皂甙Tanguticoside A的¹H和¹³CNMR信号进行了全归属.     

应用2D NMR技术研究原七叶树皂甙甙元的结构

原七叶树皂甙甙元是七叶树皂甙经温和酸水解得到的皂甙甙元,系多羟基齐墩果烷三萜类化合物.应用2D NMR技术:¹H-¹H COSY、HMQC、HMBC和NOESY全归属原七叶树皂甙甙元碳和氢质子信号,为该类型化合物的结构签定提供光谱学依据.     

基于空间二进制编码的3 D形貌测量方法

介绍了一种基于空间二进制编码的非接触３ Ｄ 形貌测量方法。它用一台ＬＣＤ 投影仪对被测物体表面进行空间编码,再用一台ＣＣＤ 摄像机获取物体编码信息,最后用三角法原理从摄像机图像中获取三维形貌数据。提出了基于三角法的空间二进制码的重要特性,描述了高效编码的构造方法。用这个构造方法构造出一个完全数字化的７ 位字长的二进制编码。基于这种编码的３ Ｄ 形貌测量方法在被测物体表面非常不连续和非构造的环境下取得了良好的测量结果。     

三硼酸铯和硼酸铯锂晶体的晶格振动光谱研究

本文对新型非线性光学晶体三硼酸铯（ＣｓＢ３Ｏ５∶ＣＢＯ）和硼酸铯锂（ＣｓＬｉＢ６Ｏ１０∶ＣＬＢＯ）进行了晶格振动光谱研究。首先对两种晶体的基本晶格振动模进行了对称性分类,记录了两种晶体低温下的拉曼光谱和室温下的红外反射光谱,对晶体的晶格振动模进行了认定,将振动模归属于平面六元环（Ｂ３Ｏ６）和四面体（ＢＯ４）。然后比较了ＣＢＯ,ＣＬＢＯ和ＬＢＯ（ＬｉＢ３Ｏ５）三种晶体的晶格振动光谱,讨论了阳离子对振动光谱的影响。另外,还讨论了硼酸盐晶体晶格振动模ＬＯ ＴＯ分裂的大小与晶体非线性光学系数之间的关系。     

Electron mobility in poly(3-hexylthiophene) enhanced by gamma-ray irradiation

Gamma-ray irradiation effects on the photoresponsive thin-film devices based on the regioregular poly(3-hexylthiophene) (RR-P3HT) conjugated polymer have been studied by means of atomic force microscopy, UV–vis absorption, photoluminescence (PL), and time-of-flight measurements. As a result, increased light absorption in the red region and PL quenching induced by the irradiation were observed. Besides, enhancement of the electron/hole mobilities, attributable to improved ordering or increased nanodomain size of the P3HT thin films, was revealed.     

Mobility as controlled by the transverse component of phonon wave vector in quantum layers at low temperatures

Without resorting to either the Kawaji’s simplified model of interaction with only two-dimensional phonons or to the equipartition approximation for the phonon distribution, the characteristics of the momentum relaxation time of the conduction electrons in a quantized surface layer for interaction with intravalley acoustic phonons have been analysed under the condition of low temperature. The scattering and the mobility characteristics thus obtained for an n-channel (1 0 0)-oriented Si inversion layer are apparently quite different from what follows in the traditional framework.     

Characterization and organic electric-double-layer-capacitor application of KOH activated coal-tar-pitch-based carbons: Effect of carbonization temperature

The present study reports the influence of pre-carbonization on the properties of KOH-activated coal tar pitch (CTP). The change of crystallinity and pore structure of pre-carbonized CTPs as well as their activated carbons (ACs) as function of pre-carbonization temperature are investigated. The crystallinity of pre-carbonized CTPs increases with increasing the carbonization temperature up to 600 °C, but a disorder occurs during the carbonization around 700 °C and an order happens gradually with increasing the carbonization temperatures in range of 800–1000 °C. The CTPs pre-carbonized at high temperatures are more difficult to be activated with KOH than those pre-carbonized at low temperatures due to the increase of micro-crystalline size and the decrease of surface functional groups. The micro-pores and meso-pores are well developed at around 1.0 nm and 2.4 nm, respectively, as the ACs are pre-carbonized at temperatures of 500–600 °C, exhibiting high specific capacitances as electrode materials for electric double layer capacitor (EDLC). Although the specific surface area (SSA) and pore volume of ACs pre-carbonized at temperatures of 900–1000 °C are extraordinary low (non-porous) as compared to those of AC pre-carbonized at 600 °C, their specific capacitances are comparable to each other. The large specific capacitances with low SSA ACs can be attributed to the structural change resulting from the electrochemical activation during the 1st charge above 2.0 V.