Laser ablation lithography on thermoelectric semiconductor

In this paper, experimental results of the investigation of the periodic structure on thermoelectric semiconductor Cu₂Se are presented. Periodic structures were formed on surfaces of semiconductors due to multi-beam interaction of Q-switched Nd:YAG laser, which was operated in the lowest order of Gaussian mode and pulse duration 7 ns. Surface temperature evolution and transient reflectivity are studied during laser treatment. Creation of Cu islands in the maximal intensity of interference pattern was found.     

Continuous peeling extrusion of SEBS block copolymers

During continuous peeling, a central polymer rod free of visible defects was continuously extruded while being peeled at the die exit. Continuous peeling can occur at flow rates orders of magnitude higher than those at which initial surface cracking is observed. Thus, if continuous peeling can be controlled it may have potential industrial applications. The aim of this work was to study how different extrusion parameters (temperature, flow rate, die length and diameter) affect the presence of continuous peeling. The melt exiting the die has been filmed to link physical measurements and observations and to determine whether or not continuous peeling is present. Different criteria have been considered to represent the extrusion conditions under which continuous peeling may occur. Surface tension criteria can be used to try to predict the appearance and disappearance of continuous peeling. A correlation formula is also proposed for the rod diameter in terms of surface tension. Our results show that the ratio of the rod diameter to the die diameter is approximately 25% greater in the case of short-orifice dies (L/D ≈ 0) than for long capillaries (L/D ≈ 10). The correlations obtained allow analysis and discussion of flow regimes for possible applications.     

Validation of an optimization procedure to improve low frequency characteristics of rooms

A set of experiments was carried out to validate an optimization procedure based on finite element method (FEM). The idea of the procedure, fully presented in previous edition of this journal [Zhu X, Zhu Z, Cheng J. Using optimized surface modifications to improve low frequency response in a room. Appl Acoust 2004;65:841-60], is to produce an optimal geometry modification on the wall for improving low frequency sound uniformity in small rooms. Four experimental models were set up with a scale of 1:5. One was modified according to the optimized result and the others were treated with no optimization consideration. Measured frequency responses of four rooms were compared with numerical results calculated by FEM models. The transient responses in these rooms were also measured and analyzed. The agreements between calculation and measurement are satisfactory though the discrepancies due to the uncertainty of acoustic behavior of the room boundaries remain. The optimization procedure has been supported by the results that the optimized room produces the flattest frequency response and also the most smooth energy decay within the frequency range studied. The reductions of response fluctuation have reached 4.3 dB for prediction and 2.6 dB for measurement, respectively.     

Solved and unsolved problems in surface structure determination

The range of surface structural problems of interest in understanding the physics and chemistry of solid surfaces is reviewed with reference to the available methods and their strengths and limitations. Key challenges being addressed currently concern the achievable precision of measurements and their physical and chemical significance, and the complexity of the problems which may be solved. Past progress and future problems are illustrated with a series of examples ranging from the relaxation of simple clean metal surfaces through complex semiconductor reconstructions to large molecular adsorption and coadsorption systems and complex adsorbate-induced reconstructions. The strengths and limitations of scanning tunnelling microscopy as a complement to true quantitative structural methods are discussed, as is the role of chemical state specificity and elemental specificity in solving complex molecular adsorbate systems.     

Band bending at the Si(1 1 1)–SiO2 interface induced by low-energy ion bombardment

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO₂ interface after sub-keV Ar⁺ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO₂, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.     

Sulfur adsorption on Fe(1 1 0): a DFT study

The adsorption of atomic S on the Fe(1 1 0) surface is examined using density functional theory (DFT). Three different adsorption sites are considered, including the atop, hollow and bridge sites and the S is adsorbed at a quarter monolayer coverage in a p(2 × 2) arrangement. The hollow site is found to be the most stable, followed by the bridge and atop sites. At all three sites, S adsorption results in relatively minor surface reconstruction, with the most significant being that for the hollow site, with lateral displacements of 0.09 Å. Comparisons between S-adsorbed and pure Fe surfaces revealed reductions in the magnetic moments of surface-layer Fe atoms in the vicinity of the S. At the hollow site, the presence of S causes an increase in the surface Fe d-orbital density of states between 4 and 5 eV. However, S adsorption has no significant effect on the structure and magnetic properties of the lower substrate layers.     

Sn/Ge(1 1 1) α-phase: characterization of image resonances by specular electron reflection and selective electron scattering

Image potential resonances on the Sn/Ge(1 1 1) α-phase are investigated by two closely related methods: specular electron reflection and so-called selective electron scattering. Electrons from image resonances are detected on this surface at 120 and 300 K, i.e. below and above the phase transition at about 200 K. The dispersion of the image resonances reveals at these two temperatures equivalent effective electron masses, which are characteristic for this type of electronic surface states. The results of the two methods are consistent according to the similarity of the scattering processes. Changes in the loss peak intensity with the annealing temperature are assigned to the surface quality and are reflected by characteristic photoemission intensities.     

Surface roughness investigation of semi-conductor wafers

Conventionally, surface roughness is predominantly determined through the use of stylus instruments. However, there are certain limitations involved in the method, particularly when a test specimen, such as a silicon wafer, has a smooth mirror-like surface. Hence, it is necessary to explore alternative non-contact techniques. Light scattering has recently been gaining popularity as an optical technique to provide prompt and precise inspection of surface roughness. In this paper, the total integrated scattering (TIS) model is modified to retrieve parameters on surface micro-topography through light scattering. The applicability of the proposed modified TIS model is studied and compared with an atomic force microscope. Experimental results obtained show that the proposed technique is highly accurate for measuring surface roughness in the nanometer range.     

Surface plasmon polariton scattering by small ellipsoid particles

Scattering of surface plasmon polaritons (SPP’s) by small ellipsoid particles placed near a dielectric–metal interface is theoretically considered. Using the Green’s function formalism and the dipole approximation, we consider the differential and total scattering cross-sections associated with the SPP-to-SPP scattering as well as with the SPP scattering into waves propagating away from the interface, analyzing the influence of system parameters. As an example, scattering cross-sections of differently shaped gold spheroid particles placed near an air–gold interface are evaluated at the light wavelength of 800 nm. It is shown that the differential and total cross-sections depend strongly upon the particle-to-surface distance, the ratio between the major and minor axes and their orientation with respect to both the interface and the direction of SPP incidence. Implications of the obtained results to the design of SPP micro-optical components are also discussed.     

Behavior of zirconium in the ZrOW(100) system at high temperature, studied by ISS, AES and work-function measurements

The behavior of zirconium atoms at the W(100) surface associated with oxygen adsorption at different sample temperatures has been studied by Auger electron spectroscopy (AES), ion scattering spectroscopy (ISS), and the relative change of the work function (Δф) measured by the onset of the secondary electron energy distribution. The results have revealed: (i) adsorption of zirconium onto the W(100) surface followed by the elevation of the sample temperature up to 1710 K in an oxygen partial pressure of 2.7 × 10⁻⁴ induces complete diffusion of zirconium atoms into the W(100) substrate; (ii) further exposure of oxygen induces co-existence of oxygen and tungsten on the surface at 1710 K, resulting in a work function of 4.37 eV; (iii) keeping the sample temperature at 1710 K, simple evacuation of the system has resulted in surface segregation of zirconium atoms to the surface to form a zirconium atomic layer on the top-most surface, reducing the work function to 2.7 eV. The results have revealed that this specific behavior of zirconium atoms at high temperature assures, with very good reproducibility, the highly stable performance and long service life of Zr---O/W(100)-emitters in practical use, even in a low vacuum of 10⁻⁶ Pa.