一种多通道超导测试系统的设计与实现

为了实现对超导带材和超导电力装置的电压、电流、温度等信号的快速精确测量,设计了一种超导测试系统的方案并进行了实验验证。该测试方案是根据超导电力实验特点,并基于系统开关、数字万用表和电源等现有仪器,在虚拟仪器环境下,实现了超导体多路测试量的实时采集与远程监控。实验结果表明,该测试系统可以快速准确探测电气信号,为超导体的交流损耗、稳定性裕度等测量提供可靠的前提条件。     

活性炭富集电感耦合等离子体原子发射光谱测定铋系超导粉中痕量铁

建立了电感耦合等离子体原子发射光谱(ICP-AES)测定超导粉中痕量铁的新方法。优化了仪器工作参数,对痕量铁测定时的基体干扰及消除干扰的方法进行了系统研究,结果表明:大量存在的基体元素产生一定基体效应,并使重现性变差,且由于铁含量甚微,仪器灵敏度不能满足测定的要求,需采用分离富集方法以提高测定结果的准确度和精密度。以三乙醇胺掩蔽基体元素铋和铜,在适宜的酸度条件下,铁与邻二氮菲生成配合物,以活性炭定量吸附,用1∶1硝酸解吸,并对分离富集条件进行了优化。对模拟标准样品进行测定,分析结果与理论值一致,相对标准偏差为2.4%,方法检出限为0.033μg.g-1。该方法已用于超导前驱粉样品中痕量铁的分析,结果令人满意,并进行了回收实验,回收率为95.6%～98.0%。     

冷绝缘超导电缆的结构及技术简介

超导电缆具有传输容量大、传输损耗低、占用通道小和环境友好等特性,备受电力行业的关注.随着超导电缆技术的不断进步,它将很有可能在未来电网的主干线路、城市电力负荷集中区、大型工矿厂区等电能传输密集的线路中得到广泛应用.冷绝缘是超导电缆的一种结构形式,在交流电传输上具有一定的优势.目前,冷绝缘超导电缆在国际上有多个已完成和进行中的示范性项目,是超导电缆技术发展的一个重要方向.本文介绍了冷绝缘超导电缆的基本结构,与热绝缘超导电缆的区别,并根据10kV/1500A单相冷绝缘超导电缆的研发实践,对其制作技术进行简要介绍.     

Mössbauer study of the (Ru1-xFex)Sr2GdCu2O8-δ system and two of its possible impurities: SrRuO3 and Gd2CuO4

Mössbauer spectra of a series of samples of the weak ferromagnetic $ {\left( {Ru_{{1 - x}} Fe_{x} } \right)}Sr_{2} GdCu_{2} O_{{8 - \delta }} M?ssbauer spectra of a series of samples of the weak ferromagnetic system reveal the existence of three dissimilar sites where the Fe atoms can go into the structure. The M?ssbauer parameters of the three observed quadrupole doublets, together with the relative population on each site, allow the following site assignment for the iron atoms: Fe³⁺ in four-fold planar coordination at Ru sites; Fe³⁺ in five-fold pyramidal coordination also at Ru sites and Fe²⁺ or Fe³⁺ in five-fold coordination at Cu sites. This assignment implies the formation of oxygen-vacancies at the charge reservoir (the RuO₂ planes) that affect the structure and the superconducting and magnetic properties of the undoped system. Moreover, a close correlation between the oxygen content, calculated through the M?ssbauer data, and the measured cell volume is established. We also report the M?ssbauer spectra of two compounds (SrRu_0.95Fe_0.05O₃ and Gd₂Cu_0.95Fe_0.05O₄) that could be formed as impurities during the synthesis of our samples.     

Preparation, crystal structure, and superconductive characteristics of new oxynitrides (Nb1−xMx)(N1−yOy) where M=Mg, Si, and x≈y

New niobium oxynitrides containing either magnesium or silicon were prepared at 1000 °C by ammonia nitridation of oxide precursors obtained via the citrate route. The products had rock-salt type crystal structures. Crystallinity was improved by annealing in 0.5 MPa N₂ and the final compositions were (Nb_0.95Mg_0.05)(N_0.92O_0.08) at 1500 °C and (Nb_0.87Si_0.09□_0.04)(N_0.87O_0.13) at 1200 °C. The magnesium and oxide ions partially co-substitute the niobium and nitride ions in the octahedral sites of the δ-NbN lattice, respectively. Silicon ions were also successfully doped together with oxide ions into the rock-salt type NbN lattice. The Si doped product exhibited relatively large displacement at the octahedral sites and was accompanied by a small amount of cation vacancies. Superconductivity was improved by annealing to obtain critical temperatures/volume fractions of T_c=17.6 K/100% for Mg- and T_c=16.2 K/95% for the Si-doped niobium oxynitrides.     

Si doped Cu0.5Tl0.5Ba2Ca2Cu3O10−δ superconductors

The Si doped (Cu_0.5Tl_0.5)Ba₂Ca₂Cu_3−ySi_yO_10−δ (y=0, 0.25, 0.5, 0.75, 1.0, 1.25) superconductor samples have been synthesized to investigate the effect of mobile carriers on the critical temperature and magnitude of diamagnetism of this family of cuprates. The Si doped samples have tetragonal structure as observed from the X-ray diffraction spectra. The c-axis length of the unit cell of (Cu_0.5Tl_0.5)Ba₂Ca₂Cu_3−ySi_yO_10−δ was increased after the increase of Si concentration, whereas the critical temperature and the magnitude of diamagnetism have been decreased. The decrease in T_c(0) and magnitude of diamagnetism is possibly due to the deficiency of carriers in CuO₂/SiO₂ planes caused by the +4 state of Si atoms. However, the post-annealing of these samples in oxygen atmosphere has increased the critical temperature and the magnitude of diamagnetism. The FTIR absorption measurements of (Cu_0.5Tl_0.5)Ba₂Ca₂Cu_3−ySi_yO_10−δ samples have shown a softening of the apical oxygen mode of the type Cu(1)O_ACu(2) and TlO_ACu(2) with increased concentration of Si in the unit cell; the softening of this mode is directly linked with the increase in the c-axis lattice parameter of the (Cu_0.5Tl_0.5)Ba₂Ca₂Cu_3−ySi_yO_10−δ superconductor.     

Large upper critical field in non-centrosymmetric superconductor Y2C3

We determine the upper critical field μ₀H_c2(T_c) of non-centrosymmetric superconductor Y₂C₃ using two distinct methods: the bulk magnetization M(T) and the tunnel-diode oscillator (TDO) based impedance measurements. It is found that the upper critical field reaches a value of 30 T at zero temperature which is above the weak-coupling Pauli paramagnetic limit. We argue that the observation of such a large μ₀H_c2(0) in Y₂C₃ could be attributed to the admixture of spin-singlet and spin-triplet pairing states as a result of broken inversion symmetry.     

The observation of sonic range velocities of normal zone propagation in high current density superconductor

The sonic range velocities of normal zone propagation in high current density superconductor were observed. The experimental results were obtained on samples of 0.16–0.11 mm thickness of a monofilamentary NbTi wire with critical current density J_c about 10⁶ A/cm². The s→n change of the sample sections was recorded after the normal zone stimulation by the magnetic field impulse. The voltage increasing speed reached 1.5×10⁷ V/s, and the normal zone propagation velocity exceeded 5±1 km/s. This high velocity can be caused by the detonation-like propagation of normal phase in superconductor with high current density.     

MgB2超导体的正电子湮没研究

本文利用正电子湮没技术（PAT）对不同密度的MgB2样品分别进行了测定，结果发现正电子在MgB2中自由态的湮没时间（本征寿命τ1）和在捕获态的湮没时间（缺陷寿命τ2）比其他高温超导体都明显要高，这反映了MgB2的体电子浓度相对于其它超导体要低，可能归因于MgB2超导材料本身的晶体结构和化学组成，MgB2超导材料的正电子寿命不仅与晶体的结构缺陷，而且与样品的密度或孔隙度有关．     

Parallel upper critical field of niobium/graphite bilayers

The influence of the superconducting proximity effect to the upper critical field (H_C) in niobium/graphite bilayers was studied and related to the ratio : and are the transition temperature of Nb/KG film and that of Nb film respectively. The thickness of niobium (Nb) film was controlled about 40 nm, and that of graphite (kish graphite: KG) film ranged from 120 nm to 140 nm. For making a specimen, Nb was deposited on a KG film and a quartz glass substrate simultaneously, and magnetic field was applied parallel to the Nb/KG interface. H_C of Nb/KG film () lowered from that of Nb film () at all temperatures within this work, and the value of ΔH_C defined as showed different temperature dependence among samples, depending on whether < or 1.00. This behavior of H_C suggests the additional existence of the interference of electrons in the clean KG film.