粗糙度与气体稀薄性对微尺度流动特性的影响

对氮气和氦气在粗糙微通道以及光滑微通道内流动进行了阻力特性实验研究。实验结果表明,即使在较小的相对粗糙度高度下,由于微通道中的粗糙度分布密集,会极大地增加流动阻力,这是导致文献中微通道流动阻力系数实验值相互偏差的主要原因之一;而对于滑移区的气体流动,气体稀薄性使流动阻力明显减小而导致流量增加。     

Thickness-dependent electrical and optical properties of Ge8Sb2Te11 thin films

The amorphous Ge₈Sb₂Te₁₁thin films with varying thickness are thermally deposited on well-cleaned glass substrate from its polycrystalline bulk. Absence of any sharp peak confirms the amorphous nature of deposited films. Thickness-dependent electrical and optical properties including dc-activation energy, sheet resistivity, optical band gap, band tailing parameter, etc. of Ge₈Sb₂Te₁₁thin films have been studied. The optical parameters have been calculated from transmission, reflection and absorbance data in the spectral range of 200–1100 nm. It has been found that optical band gap and band tailing parameter decreases with the increase in Ge₈Sb₂Te₁₁thin films thickness. The dc-activation energy and sheet resistivity decreases while the crystallization temperature of the amorphous Ge₈Sb₂Te₁₁ films increases with the increase in thickness of the films. The decrease of the sheet resistivity has been substantiated quantitatively using the classical size-effect theory. These results have been explained on the basis of rearrangements of defects and disorders in the amorphous chalcogenide system.     

A practical comparison of surface resistance test electrodes

Four surface resistance test electrodes are compared using a selection of materials under similar test conditions. The results vary considerably with some materials due to variation in surface resistivity. Using a relatively uniform material two concentric ring electrodes compliant with the same standard differed in results by a factor of 1.8. Silver stripe and copper tape electrodes gave results a factor 0.4 and 0.7 compared to the reference electrode. A 2-pin electrode gave results a factor 4.7 greater. The 2 pin probe cannot be expected to give similar results to the other electrodes for materials that have variable resistivity.     

边界元素法在集成电路CAD中的应用

本文采用边界元素法(BEM)计算任意多边形的二维电阻和复杂结构的二维电容。同一计算程序既能计算电阻又能计算电容,而只需作微小不同的后处理。对于边界元素法,由于仅需计算边界上的积分方程,其离散边界上的网格点数大大少于有限差分法及有限元素法所需的网格点数,使CPU执行时间显著减少,并简化了网格划分工作。此外,计算结果还指出边界元素法具有精度高和处理复杂边界能力强的优点。     

大功率半导体激光器阵列热串扰行为

以硬焊料传导制冷,30%填充因子半导体激光器阵列为例,建立了三维有限元模型,对阵列内部各发光单元之间的热串扰行为进行了分析研究。结果表明,当其连续波工作时间大于1.2 ms后,阵列内发光单元之间出现热串扰现象;当次热沉由CuW合金改为铜金刚石复合材料时,阵列内发光单元自热阻和相邻发光单元的串扰热阻降低,有效地降低了各发光单元之间的热串扰行为。保持阵列宽度、发光单元数目及发光单元周期不变,发现随阵列填充因子的增加,器件热阻以指数衰减趋势逐渐降低,而发光单元间的热串扰特性对此变化并不敏感;保持阵列单个发光单元输出功率,发光单元尺寸及阵列宽度不变,增加发光单元个数后,阵列内各发光单元之间热串扰加剧,填充因子越高阵列升温速率越快;但在最初约70 s内,包含不同数目发光单元的阵列最高温度差异仅约0.5 ℃,有利于多发光单元高填充因子器件高功率输出。     

The aΔg→XΣg magnetic dipole transition of S2

Emission spectra of the 0-0 band of the a¹Δ_g→X³Σ⁻_g magnetic dipole transition of S₂ have been observed in the near-infrared spectral region near 4400 cm⁻¹. The S₂ molecules were generated in a fast-flow system by passing S_x or S₂Cl₂ vapor in Ar carrier gas through a microwave discharge and were excited by electronic-to-electronic energy transfer from metastable singlet oxygen O₂(a¹Δ_g). Medium-resolution spectra of the b¹Σ⁺_g→X³Σ⁻_g and a¹Δ_g→X³Σ⁻_g transitions of S₂ were measured with a Fourier-transform spectrometer. By comparing the bandshape of the 0-0 band of the a→X system with a computer simulation calculated with literature data of the rotational constants of the X and a states, the origin of the 0-0 band was determined to be ν₀=4394.25±0.2 cm⁻¹.     

环式M(SO2)(M=Zn, Cd)分子及其阴离子的基质隔离红外光谱和密度泛函理论计算

激光溅射锌和镉原子与SO₂分子反应的低温基质隔离红外光谱实验表明,在氩和氖的惰性基质中,形成了环式M(SO₂)分子及其阴离子M(SO₂)^- (M=Zn, Cd)．相关同位素(³⁴SO₂和S¹⁸O₂)替代实验及密度泛函理论计算均证实了这一结果．此外,自然电荷布居分析表明电子从金属锌和镉的s轨道转移到了SO₂配体上形成了M⁺(SO₂)^-“离子对”复合物,且该分子中的Zn-O键以及Cd-O键均表现出强的极化共价性．而Hg原子在与SO₂反应中所表现出来的惰性可由其较强的相对论效应所致的6s价电子层收缩与高电离电位得以解     

金锡共晶互连对HP-LED光热性能的改善

随着功率型LED(HP-LED)对散热的要求越来越高,传统导电银胶越来越难以满足LED的高散热要求。虽然共晶互连工艺是微电子领域中的一种有效的散热互连方法,但是由于LED的特殊性,该工艺在LED互连封装中的性能改善研究还比较少。本文对金锡共晶互连、锡膏互连和银胶互连的3种LED器件分别进行了光学、热学以及剪切力等方面的测试分析研究,结果表明:底部与顶部同时加热的金锡共晶工艺互连的LED器件可以有效地改善仅底部加热共晶互连层中的空洞缺陷,在1 000 mA电流条件下,相对于锡膏、银胶互连的LED器件具有较低的热阻、较稳定的峰值波长偏移、较强的互连层剪切力等性能。金锡共晶互连工艺是一种可以有效改善大功率LED散热及互连强度的方法。     

受迫振动实验中几个问题的探讨

就受迫振动实验中振动系统半宽带、品质因素及稳定受迫振动强迫力与阻力做功进行研究和探讨。     

Microstructure and properties of Nb/Ta multilayer films irradiated by a high current pulse electron beam

Nb/Ta multilayer films deposited on Ti6Al4V substrate with Nb and Ta monolayer thicknesses of 30 nm, 120 nm, and 240 nm were irradiated by a high current pulse electron beam (HCPEB) to prepare Nb-Ta alloyed layers. The microstructure and the composition of the outmost surface of melted alloyed layers were investigated using a transmission electron microscope (TEM) equipped with an X-ray energy dispersive spectrometer (EDS) attachment. The Ta content of the alloyed surface layer prepared from the monolayer of thickness 30 nm, 120 nm, and 240 nm was ～ 27.7 at.%, 6.37 at.%, and 0 at.%, respectively. It was found that the Ta content in the alloyed layer plays a dominant role in the microstructure of the films. The hardness and the wear rate of the alloyed layers decrease with the increasing content of Ta in the surface layer.