p-Type thermoelectric properties of the oxygen-deficient perovskite Ca2Fe2O5 in the brownmillerite structure

Brownmillerite calcium ferrite was synthesized in air at 1573 K and thermoelectric properties (direct current electrical conductivity σ, Seebeck coefficient α, thermal conductivity κ, thermal expansion α_L) were measured from 373 to 1050 K in air. Seebeck coefficient was positive over all temperatures indicating conduction by holes, and electrical properties were continuous through the Pnma-Imma phase transition. Based on the thermopower and conductivity activation energies as well as estimated mobility, polaron hopping conduction was found to dominate charge transport. The low electrical conductivity, <1 S/cm, limits the power factor (α²σ), and thus the figure of merit for thermoelectric applications. The thermal conductivity values of ∼2 W/mK and their similarity to Ruddlesden-Popper phase implies the potential of the alternating tetrahedral and octahedral layers to limit phonon propagation through brownmillerite structures. Bulk linear coefficient of thermal expansion (∼14×10⁻⁶ K⁻¹) was calculated from volume data based on high-temperature in situ X-ray powder diffraction, and shows the greatest expansion perpendicular to the alternating layers.     

Luminescent properties of cobalt-doped α-ZnAl2S4 spinel type single crystals

The absorption and luminescent properties of α-ZnAl₂S₄:Co spinel type crystals grown by chemical transport reactions method are investigated. The spectra are assigned to the electronic transitions of Co²⁺ ions located in tetrahedral sites. It is shown, that the revealed four radiative spectral components are caused by the ²A(²G)→⁴T₁(⁴F), ⁴T₁(⁴P)→⁴T₂(⁴F), ²E(²G)→ ⁴T₂(⁴F) and ²E(²G)→⁴T₁(⁴F) transitions.     

Microstructure and magnetic properties of CoFe_2O_4 thin films deposited on Si substrates with an Fe_3O_4 under-layer

The microstructure and magnetic properties of cobalt ferrite thin films deposited by the sputtering method on an Fe3O4 under-layer were investigated at different post-annealing temperatures.Results show that the Fe3O4 under-layer can accelerate the grain growth of cobalt ferrite films due to the phase transformation of the Fe3O4 under-layer at about 400°C-500°C.By introducing the Fe3O4 under-layer,cobalt ferrite nanocrystalline thin films with high coercivity can be obtained at lower post-annealing temperat...     

Radiative properties of α-ZnAl2S4:V spinel type single crystals

The absorption and luminescent properties of α-ZnAI₂S₄:V spinel type crystals in the temperature range 10-300 K are investigated. The spectra are assigned to the electronic transitions of trivalent vanadium ions located in octahedral sites. It is shown that at low temperatures the three main components of the revealed IR luminescence spectra are caused by the ¹A_1g(¹G)→¹E_g(¹D), ¹T_2g(¹D), ³T_2g(³F)→³T_1g(³F), and ¹E_g(¹D)→³T_1g(³F) transitions. The observed dependencies of the emission components intensities on temperature are explained assuming that there is a phonon assisted tunnelling between ³T_2g(³F) and ¹E_g(¹D) states. On temperature rise, the ³T_2g(³F)→³T_1g(³F) vibronic transitions suppress other emission channels, which leads to the enhancement of the integral luminescence intensity and to the broadening of the spectrum centred at λ=1.4 μm.     

Effect of substitution of K ions on the structural and electrical properties of nanocrystalline MgAl2O4 spinel oxide

Potassium substituted nanosized magnesium aluminates having a nominal composition Mg_1−xK_xAl₂O₄ where x=0.0, 0.25, 0.5, 0.75, 1.0 have been synthesized by the chemical co-precipitation method. The samples have been characterized by means of X-ray diffraction (XRD), scanning electron microscope (SEM), and dc electrical resistivity measurements. The XRD results reveal that the samples are spinel single phase cubic close packed crystalline materials. The calculated crystallite size ranges between 6 and 8 nm. The behaviour of the lattice constant seems to deviate from the Vegard's law. While X-ray density clearly increases, the bulk density and consequently, the percentage porosity do not exhibit a significant change on increasing the K⁺ content. The SEM micrographs suggest homogeneous distribution of the nanocrystallites in the samples. The dc electrical resistivity exhibits a typical semiconducting behaviour. Substitution of a Mg²⁺ ion by a K⁺ ion provides an extra hole to the system, which forms small polaron. Thermally activated hopping of these small polarons is believed to be the conduction mechanism in the Mg_1−xK_xAl₂O₄. The activation energy of hopping of small polarons has been calculated and found K⁺ ions content dependent.     

多功能磁光子晶体太赫兹可调偏振控制器件

通过对磁场控制下的二维磁光子晶体太赫兹波偏振传输特性的研究,利用铁氧体磁光材料的磁导率随外磁场改变而变化的特点,设计了具有可控起偏、偏振分束和可调谐波片功能的光子晶体太赫兹偏振控制器件.利用平面波展开法和严格耦合波分析分别计算了光子晶体带隙位置和透过率随外磁场强度变化的关系,用时域有限差分法计算了场分布和相位.结果表明,该结构可以实现高偏振消光比的偏振起偏器和分束器,以及在1 THz附近-π-π相位范围的连续可调谐波片. 关键词： 太赫兹 光子晶体 铁氧体 偏振控制     

High-temperature electrical properties of magnesiowustite Mg1 − xFexO and spinel Fe3 − x − yMgxCryO4 ceramics

Phase relationships, thermal expansion and electrical properties of Mg_1 − xFe_xO (x = 0.1-0.45) cubic solid solutions and Fe_{3 − x − y}Mg_xCr_yO_4 ± δ (x = 0.7-0.95; y = 0 or 0.5) spinels were studied at 300-1770 K in the oxygen partial pressure range from 10 Pa to 21 kPa. Increasing iron content enlarges the spinel phase stability domain at reduced oxygen pressures and elevated temperatures. The total conductivity of the spinel ceramics is predominantly n-type electronic and is essentially p(O₂)-independent within the stability domain. The computer simulations using molecular dynamics technique confirmed that overall level of ion diffusion remains low even at high temperatures close to the melting point. Temperature dependencies of the total conductivity in air exhibit a complex behavior associated with changing the dominant defect-chemistry mechanism from prevailing formation of the interstitial cations above 1370-1470 K to the generation of cation vacancies at lower temperatures, and with kinetically frozen cation redistribution in spinel lattice below 700-800 K. The average thermal expansion coefficients of the spinel ceramics calculated from dilatometric data in air vary in the range (9.6-10.0) × 10^− 6 K^− 1 at 300-500 K and (13.2-16.1) × 10^− 6 K^− 1 at 1050-1370 K. Mg_1 − xFe_xO solid solutions undergo partial decomposition on heating under oxidizing and mildly reducing conditions, resulting in the segregation of spinel phase and conductivity decrease.     

Effect of ultrasonic irradiation on structure and electrochemical properties of LiMn2O4 thin films cathode material for Li-ion micro-batteries

Two kinds of spinel LiMn₂O₄ thin film for lithium ion micro-batteries were successfully prepared on polycrystal Pt substrates by spin coating methods, which were carried out under ultrasonic irradiation (USG) and magnetic stirring (MSG), respectively. The microstructures and electrochemical performance of LiMn₂O₄ thin films were characterized by thermogravimetry analysis (TGA), X-ray diffraction (XRD), scanning electron microscopy (SEM), and galvanostatic charge-discharge measurements. It was found that the crystalline structure of USG samples grew better than that of the MSG samples. At the same time, higher discharge capacity and better cycle stability were obtained for the LiMn₂O₄ thin films of USG at the current density of 50 μAh/cm² between 3.0 and 4.3 V. The 1st discharge capacity was 57.8 μAh/cm²-μm for USG thin films and 51.7 μAh/cm²-μm for MSG thin films. After 50 cycles, 91.4% and 69% of discharge capacity could be retained respectively, indicating that ultrasonic irradiation condition during spin coating was more suitable for preparing spinel LiMn₂O₄ thin films with better electrode performance for lithium ion micro-batteries.     

The characterization of Cr secondary oxide phases in ZnO films studied by X-ray spectroscopy and photoemission spectroscopy

X-ray absorption near-edge structure (XANES), X-ray emission spectroscopy (XES), and X-ray photoemission spectroscopy (XPS) were used to characterize the Cr secondary oxide phases in ZnO films that had been prepared using a co-sputtering method. Analysis of the Cr L_3,2-edge XANES spectra reveals that the intensity of white-line features decreases subtly as the sputtering power increases, indicating that the occupation of Cr 3d orbitals increases with Cr concentration in (Zn, Cr)O films. The O K-edge spectra show that the intensity of XANES features of (Zn, Cr)O films is lower than those of ZnO film, suggesting enhanced occupation of O 2p-derived states through O 2p-Cr 3d hybridization. The XES and XPS spectra indicate that the line shapes in the valence band of (Zn, Cr)O films are quite different from those of ZnO and that the Cr₂O₃ phase dominates the spinel structure of (Zn, Cr)O films increasingly as the Cr sputtering power is increased. Over all results suggest that the non-ferromagnetic behavior of (Zn, Cr)O films can be attributed to the dominant presence of Cr₂O₃, whereas the bulk comprise phase segregations of Cr₂O₃ and/or ZnCr₂O₄, which results them the most stable TM-doped ZnO material against etching.     

The role of matching thickness on the wideband electromagnetic wave suppresser using single layer doped barium ferrite

The effect of Mg²⁺, Co²⁺and Ti⁴⁺ substitution on microwave absorption has been studied for BaMg_0.5Co_0.5Ti_1.0Fe₁₀O₁₉ ferrite-acrylic resin composite in frequency range from 13 to 20 GHz. X-ray diffraction (XRD), scanning electron microscopy (SEM), vector network analysis and vibrating sample magnetometry (VSM) were employed to analyze structure, electromagnetic and microwave absorption properties of prepared ferrite. The obtained results of reflectivity demonstrate that by varying matching thickness along with weight percentage of ferrite to acrylic resin, the bandwidth coupled with reflection loss values of prepared composites can be easily tuned. Based on microwave measurement on reflectivity, it is found that BaMg_0.5Co_0.5Ti_1.0Fe₁₀O₁₉ is a good candidate for wideband electromagnetic compatibility and other practical applications at high frequency.