On the role of a torsion‐like field in a scenario for the Spin Hall Effect

Starting from a field theory action that describes a Dirac fermion, we propose and analyze a model based on a low‐relativistic Pauli equation coupled to a torsion‐like term to study Spin Hall Effect (SHE). We point out a very particular connection between the modified Pauli equation and the (SHE), where what we refer to torsion as field playing an important role in the spin‐orbit (SO) coupling process. In this scenario, we present a proposal of a spin‐type current, considering the tiny contributions of torsion in connection with intrinsic anisotropy of the crystal electric field.     

含单负特异材料一维无序扰动周期结构中的光子局域特性研究

采用传输矩阵法研究了电磁波在由单负特异材料组成的一维无序扰动周期结构中的Anderson局域(Anderson Localization)行为,分别讨论了色散和非色散两种模型.结果发现,在对应周期结构的通带位置,无序的引入对局域长度的影响较大,而在带隙位置,影响较小,几乎可以忽略.该性质与我们曾讨论的随机结构有较明显不同.导致这种局域性质的主要原因应为,光在单负材料组成的系统中的传输主要依赖于两种单负材料间的界面.在无序扰动结构中,该界面数相对于周期结构并没有减少,因此对光的传输性质影响较小,而随机结构中     

Minimal switching voltage for magnetization reversals in asymmetric nanorings

Micromagnetic simulations based on the Landau–Lifshitz–Gilbert equation are presented to study spin-polarized current induced magnetization switching in asymmetric nanoring-shaped magnetic tunnel junctions. The results show that in a nanoring with an intermediate eccentric distance S, the critical switching voltage V_C reaches the minimum whose magnitude is less than half of the voltage for a symmetric nanoring. In addition to the spin-transfer torque, the current induced Ampère field is found to play a crucial part in the switching process. Analysis is given to explain the existence of such an energy valley that leads to the minimal voltage.     

The ground state energy of the Edwards-Anderson spin glass model with a parallel tempering Monte Carlo algorithm

We study the efficiency of parallel tempering Monte Carlo technique for calculating true ground states of the Edwards-Anderson spin glass model. Bimodal and Gaussian bond distributions were considered in two- and three-dimensional lattices. By a systematic analysis we find a simple formula to estimate the values of the parameters needed in the algorithm to find the GS with a fixed average probability. We also study the performance of the algorithm for single samples, quantifying the difference between samples where the GS is hard, or easy, to find. The GS energies we obtain are in good agreement with the values found in the literature. Our results show that the performance of the parallel tempering technique is comparable to more powerful heuristics developed to find the ground state of Ising spin glass systems.     

Spin and orbital magnetic moments and spin anisotropy energies of light rare earth atoms embedded in graphene: A first-principles study

The geometries, electronic structures, spin magnetic moments (SMMs), orbital magnetic moments (OMMs) and spin anisotropy energies (SAEs) of light rare earth atoms (La, Ce, Pr, Nd, Pm, Sm, Eu, and Gd) embedded in graphene were studied by using first-principles calculations based on Density Functional Theory (DFT). The spin-orbital coupling effect was taken into account and GGA+U method was adopted to describe the strongly localized and correlated 4f electrons. There is a significant deformation of the graphene plane after doping and optimization. The deformation of Gd doped graphene is the largest, while Eu the smallest. The results show that the valence is +3 for La, Ce, Pr, Nd, Pm, Sm and Gd, and +2 for Eu. Except Eu and Gd, there are obvious OMMs. When the spin is in the Z direction, the OMMs are −0.941 μ_B, −1.663 μ_B, −3.239 μ_B, −3.276 μ_B and −3.337 μ_B for Ce, Pr, Nd, Pm and Sm, respectively, and point the opposite direction of SMMs. All the doped systems except Gd show considerable SAEs. For Ce, Pr, Nd, Pm, Sm, and Eu, the SAEs are −0.928 meV, 20.941 meV, −8.848 meV, 7.855 meV, 75.070 meV and 0.810 meV, respectively. When the spin orientation is different, different orbital angular moments lead to apparent charge density difference of the 4f atoms, which can also explain the origin of SAEs.     

The flipped longitudinal polarization sequence

By flipping the longitudinal magnetization with a chain of 180° pulses it is possible to effectively restore the effects of relaxation so that the same longitudinal magnetization is periodically recovered. The pulse sequence for achieving this, called Flipped LOngitudinal Polarization (FLOP), can be incorporated into any pulse sequence whenever it is desired to stop the attenuation in longitudinal magnetization caused by relaxation. We illustrate its use for fast, single-shot measurements of the longitudinal relaxation time and for three-dimensional T₁ mapping.     

Solutions of the Equation of a Spinorial Yamabe-type Problem on Manifolds of Bounded Geometry

We consider a spinorial Yamabe-type problem on open manifolds of bounded geometry. The aim is to study the existence of solutions to the associated Euler–Lagrange-equation. We show that under suitable assumptions such a solution exists. As an application, we prove that existence of a solution implies the conformal Hijazi inequality for the underlying spin manifold.     

Spin transistor and quantum spin Hall-effects in CdBxF2−x–p-CdF2–CdBxF2−x sandwich nanostructures

Planar CdB_xF_2−x–p-CdF₂–CdB_xF_2−x sandwich nanostructures prepared on the surface of the n-type CdF₂ bulk crystal are studied to register the spin transistor and quantum spin Hall-effects. The current–voltage characteristics of the ultra-shallow p⁺–n junctions verify the CdF₂ gap, 7.8 eV, and the quantum subbands of the 2D holes in the p-type CdF₂ quantum well confined by the CdB_xF_2−xδ-barriers. The temperature and magnetic field dependencies of the resistance, specific heat and magnetic susceptibility demonstrate the high temperature superconductor properties for the CdB_xF_2−xδ-barriers. The value of the superconductor energy gap, 2Δ = 102.06 meV, determined by the tunneling spectroscopy method appears to be in a good agreement with the relationship between the zero-resistance supercurrent in superconductor state and the conductance in normal state, πΔ/e, at the energies of the 2D hole subbands. The results obtained are evidence of the important role of the multiple Andreev reflections in the creation of the high spin polarization of the 2D holes in the edged channels of the sandwich device. The high spin hole polarization in the edged channels is shown to identify the mechanism of the spin transistor and quantum spin Hall-effects induced by varying the top gate voltage, which is revealed by the first observation of the Hall quantum conductance staircase.     

Spin-dependent electron transport in a nonmagnetic nanostructure with both Dresselhaus and Rashba spin-orbit terms

The spin-dependent electron transport is numerically studied in a nonmagnetic nanostructure in the presence of both Dresselhaus and Rashba spin-orbit interactions. It is shown that the large spin polarization can be achieved in such a structure mainly due to the Rashba spin-orbit term induced splitting of the resonant level. It is also shown that the spin polarization strongly depends on the well width and the thickness of the middle barrier as well as the height of the middle barrier.     

Continuous spin models on annealed generalized random graphs

We study Gibbs distributions of spins taking values in a general compact Polish space, interacting via a pair potential along the edges of a generalized random graph with a given asymptotic weight distribution $P$, obtained by annealing over the random graph distribution.First we prove a variational formula for the corresponding annealed pressure and provide criteria for absence of phase transitions in the general case.We furthermore study classes of models with second order phase transitions which include rotation-invariant models on spheres and models on intervals, and classify their critical exponents. We find critical exponents which are modified relative to the corresponding mean-field values when $P$ becomes too heavy-tailed, in which case they move continuously with the tail-exponent of $P$. For large classes of models they are the same as for the Ising model treated in Dommers et al. (2016). On the other hand, we provide conditions under which the model is in a different universality class, and construct an explicit example of such a model on the interval.