Transition between layered and filamentary types of anisotropy in layered superconducting structures

A model of layered superconducting structure consisting of alternating anisotropic superconducting layers S₁ and S₂ with different transition temperatures is considered. It is shown that due to competition between two origins of anisotropy - effective-mass anisotropy of individual layers and proximity-induced anisotropy the effective anisotropy of the whole system signficiantly varies temperature. The components of the effective-mass tensor m_c (along the anisotropy axis) and m_a (perpendicular to the anisotropy axis) strongly depend upon temperature. This may lead to transition between layered (m_c > m_a) and quasi one-dimensional (m_c < m_a) types of anisotropy as well as to biaxial-type anisotropy which is also temperature dependent. The field distribution in a tilted vortex in a biaxial superconductor is calculated. The change in the properties of the vortex lattice with temperature in such systems is also investigated. The properties of YBa₂Cu₃O_x/PrBa₂Cu₃O_y multilayers are discussed in this connection.     

InAs/GaSb/AlSb resonant tunneling spin device concepts

We discuss device concepts for creating spin-polarized current sources without external magnetic fields, using non-magnetic 6.1 Å semiconductor resonant tunneling structures. Spin filters, spin pumps, and spin transistors that exploit structural and bulk inversion asymmetries will be examined.     

承受拉-扭组合载荷的薄壁圆筒屈服时产生塑性流动的条件

提出了在无外力作功的情况下，具有Bauschinger效应的弹塑性材料处于屈服状态产生自发的塑性流动时应满足的条件．这个条件不仅与材料的力学性能有关，而且还处决于材料的具体的载荷边界条件和变形．举例说明了承受拉一扭组合的薄壁圆筒中，采用组合强化模型时，产生塑性流动的具体条件．     

四能级原子系统中量子相干增强的Kerr非线性效应的研究

应用密度矩阵方程计算了四能级原子系统中三阶非线性极化率随信号光和探针光频率失谐的变化关系。结果表明，由于量子干涉对信号光强度的敏感性，使四能级原子介质的交叉Kerr非线性作用大大增强，与三能级系统相比，四能级原子介质的Kerr非线性系数可增强两个数量级。     

Scaling impacted structures

Summary The problem of non-scalability of structures under impact loads caused by strain-rate effects is solved in this article by properly correcting the impact velocity. The technique relies on the use of an alternative dimensionless basis, together with a mathematical model which allows the calculation of a correction factor for the impact velocity. This new velocity, when applied to the model, makes it to assure the satisfaction of the scaling laws. The indirect similitude method detailed here is applied to two strain-rate sensitive structures, a double plate under in-plane impact and a beam subjected to a blast load. The results show a very good agreement so that the model and a prototype made from strain rate sensitive materials behave the same.accepted for publication 3 March 2004     

Aharonov–Bohm oscillations observed in nanoscale open-dot structures fabricated in an InAs surface inversion layer

We fabricated nanoscale open-dot structures in an InAs surface inversion layer using an atomic-force-microscope oxidation process. Due to its superior nanofabrication capability, small open-dot structures with the feature size ranging between 100 and 300 nm were successfully fabricated. The magnetoresistance signal measured at 4.2 K showed reproducible fluctuations and a periodic oscillation component that varies in both amplitude and periodicity depending on the dot size. We show that the period of the oscillations corresponds to that of the Aharonov–Bohm effect and propose that the possible mechanism for the oscillations is due to the formation of a one-dimensional electron channel enclosing the open-dot structure as a result of the electron transfer from the InAs oxide to InAs.     

Quantum Hall effect in back-gated InAs/GaSb heterostructures under a tilted magnetic field

We investigate the quantum Hall effect (QHE) in the InAs/GaSb hybridized electron–hole system grown on a conductive InAs substrate which act as a back-gate. In these samples, the electron density is constant and the hole density is controlled by the gate-voltage. Under a magnetic field perpendicular to the sample plane, the QHE appears along integer Landau-level (LL) filling factors of the net-carriers, where the net-carrier density is the difference between the electron and hole densities. In addition, longitudinal resistance maxima corresponding to the crossing of the extended states of the original electron and hole LLs make the QHE regions along integer-ν_net discontinuous. Under tilted magnetic fields, these R_xx maxima disappear in the high magnetic field region. The results show that the in-plane magnetic field component enhances the electron–hole hybridization and the formation of minigaps at LL crossings.     

Rashba polarization in HgCdTe inversion layers at large depletion charges

The Rashba effect in metal–insulator–semiconductor (MIS) structures based on zero-gap HgCdTe is investigated experimentally and theoretically over a wide doping range N_A–N_D=3×10¹⁵–3×10¹⁸ cm⁻³. Increase of doping enlarges the magnitude of the effect at the same 2D concentration and strengthens a gate-voltage dependence of the Rashba splitting. The results demonstrate values of Rashba polarization as high as P_R0.5 and a capability to control the Rashba effect strength at constant electron concentration.     

Anomalies in the Absorption and Reflection of a High-Power Ultrashort Laser Pulse by a Plasma with a Solid-State Density

The patterns of absorption and reflection of an ultrashort laser pulse by a plasma with a solid-state density, which are realized in the mode of the normal skin effect, are studied. It is shown that a decrease in low-power pulse duration shorter than the period corresponding to the fundamental frequency of radiation leads to an increase in the absorption coefficient. If the pulse power is so high as to provide electron heating during a time shorter than the reciprocal fundamental frequency, nonlinear suppression of absorption takes place and the spectrum of the reflected radiation contains odd harmonics of the fundamental frequency.