利用PVDF传感器检测激光超声的实验研究

简要介绍了激光超声技术以及声表面波的基本特点、激光超声产生和接收的基本原理及激光超声技术的应用。概述了聚偏二氟乙烯（PVDF）压电薄膜材料的结构、性质和应用，以及薄膜压电性产生的机理。对PVDF换能器的设计思路和实验方法进行了简单讨论。具体实验采用脉冲激光器激发声表面波，利用PVDF传感器接收实验信号，调试实验信号，得出波形，并对实验现象作出初步分析。证实了该实验装置应用于激光超声无损检测的可行性与可靠性。     

ns激光辐照ZrO2薄膜剥落的理论研究

在ns激光辐照光学薄膜温度分布的基础上，利用最大剪应力理论建立了光学薄膜发生迎光剥落的理论模型，得到了发生损伤相应的应力分布和膜层剥落半径与入射激光能量关系．通过数值分析，验证了理论模型与实验结果基本保持一致，膜层临界损伤阈值与实验结论在数量级上保持一致；剥落半径与入射能量关系曲线与实验结果基本吻合．指出薄膜的损伤形态与其附着力强度有着密切关系，只有当附着力强度小于某一定值（～9．4×10^4N／cm^2）时，才会发生剥落．     

Preparation of co‐polymethyl(alkoxy)siloxanes by acid‐catalyzed controlled hydrolytic copolycondensation of methyl(trialkoxy)silane and tetraalkoxysilane

Polymethyl(alkoxy)siloxane copolymers, poly(MTES‐co‐TEOS), and poly(MTMS‐co‐TMOS), are prepared by acid‐catalyzed controlled hydrolytic co‐polycondensation of methyl(trialkoxy)silane MeSi(OR)₃ (R = Et (MTES) and Me (MTMS)) and tetra‐alkoxysilane Si(OR)₄ (R = Et (TEOS) and Me (TMOS)), respectively. The products are purified by fractional precipitation to provide polymethyl(alkoxy)siloxane copolymers with molecular weight 1000–10,000 (poly(MTES‐co‐TEOS)) or 1700–100,000 (poly(MTMS‐co‐TMOS)) that are stable to self‐condensation. These polymers are soluble in common organic solvents except for hexane, and form flexible and transparent free‐standing films with a tensile strength of 4.0–10.0 MPa. The structure of the polymethyl(alkoxy)siloxane copolymers is thought to be a random or a block co‐polymer. They are found to provide coating films with an adhesive strength up to 10, a refractive index of 1.36–1.40, and a dielectric constant of 3.5–3.6. The products also show better weathering stability than polyethoxysiloxane due to the hydrolytic polycondensation of TEOS. Field emission‐scanning electron micrography analysis reveals that coating films are composed of a micro‐phase separated structure. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2013 , 51, 4732–4741     

Polycrystalline silicon films prepared by metal-induced crystallisation using pre- and post-deposited aluminium on amorphous silicon

We report on the successful fabrication of polycrystalline silicon films by aluminium-induced crystallisation (AIC) of Radio frequency (rf) plasma-enhanced chemical vapour deposited (PECVD) a-Si films. The effects of annealing at different temperatures (300 and 400°C), below the eutectic temperature of the Si–Al binary system, on the crystallisation process have been studied. This work emphasises the important role of the position of the Al layer with respect to the Si layer on the crystallisation process. The properties of the crystallised films were characterised using X-ray diffraction, Raman spectroscopy, ellipsometry, field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). With an increase in the annealing temperature, it was found that the degree of crystallisation of annealed a-Si/Al and Al/a-Si films increased. The results showed that the arrangement where the Al was on top of the a-Si had a more prominent effect on crystallisation enhancement than when Al was below the a-Si. The interfacial layer between the Al and a-Si film is crucial because it influences the layer-exchange process during annealing. The oxide layer formed between the Al and the a-Si layers greatly retards the crystallisation process in the case of the Al/Si arrangement. Our investigations suggest that polycrystalline Si films formed by AIC can be used as a seed layer in solar cell fabrication.     

Electronic Properties of Passive Films Formed on G3 and G30 Nickel-based Alloys in Bicarbonate/Carbonate Buffer Solution

The electronic properties of passive films formed on G3 and G30 alloys in bicarbonate/carbonate buffer solution were comparatively studied by electrochemical impedance spectra(EIS) and Mott-Schottky analysis, the chemical composition of the passive film formed on G3 alloy was detected by X-ray photoelectron spectroscopy (XPS). The results show that passive film on G3 alloy had better protection than that on G30 alloy. The transfer resistance, film resistance and diffusion resistance of the passive films on ...     

A very promising piezoelectric property of Ta2O5 thin films. II: Birefringence and piezoelectricity

Birefringent and piezoelectric properties of Ta₂O₅ ceramic thin films of monoclinic and trigonal structures were analyzed. The birefringence, observed by reflected polarized light microscopy, yields information on thin film microstructures, crystal shapes and sizes and on crystallographic orientations of grains of trigonal structure. Such an information was considered for investigating piezoelectric properties by laser Doppler vibrometry and by piezoresponse force microscopy. The vibration velocity was measured by applying an oscillating electric field between electrodes on both sides of a Ta₂O₅ film deposited on a Si substrate which was pasted on an isolating mica sheet. In this case, it is shown that the vibration velocity results were not only from a converse piezoelectric effect, proportional to the voltage, but also from the Coulomb force, proportional to the square of the voltage. A huge piezoelectric strain effect, up to 7.6%, is found in the case of Ta₂O₅ of trigonal structure. From an estimation of the electrical field through the Ta₂O₅ thin film, this strain likely corresponds to a very high longitudinal coefficient d₃₃ of several thousand picometers. Results obtained by piezoresponse force microscopy show that trigonal grains exhibit a polarization at zero field, which is probably due to stress caused expansion in the transition monoclinic-trigonal, presented in a previous article (part I).     

High performance semiconducting polymers containing bis(bithiophenyl dithienothiophene)‐based repeating groups for organic thin film transistors

New dithienothiophene‐containing conjugated polymers, such as poly(2,6‐bis(2‐thiophenyl‐3‐dodecylthiophene‐2‐yl)dithieno[3,2‐b;2′,3′‐d]thiophene, 4 and poly(2,6‐bis (2‐thiophenyl‐4‐dodecylthiophene‐2‐yl)dithieno[3,2‐b;2′,3′‐d]thiophene, 8 have been successfully synthesized via Stille coupling reactions using dodecyl‐substituted thiophene‐based monomers, bistributyltin dithienothiophene, and bistributyltin bithiophene; these polymers have been fully characterized. The main difference between the two polymers is the substitution position of the dodecyl side chains in the repeating group. Grazing‐incidence X‐ray diffraction (GI‐XRD) gave clear evidence of edge‐on orientation of polycrystallites to the substrate. The semiconducting properties of the two polymers have been evaluated in organic thin film transistors (OTFTs). The two conjugated polymers 4 and 8 exhibit fairly high hole carrier mobilities as high as μ_ave = 0.05 cm²/Vs (I_ON/OFF = 3.42 × 10⁴) and μ_ave = 0.01 cm²/Vs, (I_ON/OFF = 1.3 × 10⁵), respectively, after thermal annealing process. The solvent annealed films underwent reorganization of the molecules to induce higher crystallinity. Well‐defined atomic force microscopy (AFM) topography supported a significant improvement in TFT device performance. The hole carrier mobilities of the solvent annealed films are comparable to those obtained for a thermally annealed sample, and were one‐order higher than those obtained with a pristine sample. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2010     

Syntheses and characterization of carbazole based new low‐band gap copolymers containing highly soluble benzimidazole derivatives for solar cell application

Newly designed 2H‐benzimidazole derivatives which have solubility groups at 2‐position have been synthesized and incorporated into two highly soluble carbazole based alternating copolymers, poly[2,7‐(9‐(1′‐octylnonyl)‐9H‐carbazole)‐alt‐5,5‐(4′,7′‐di(thien‐2‐yl)‐2H‐benzimidazole‐2′‐spirocyclohexane)] (PCDTCHBI) and poly[2,7‐(9‐(1′‐octylnonyl)‐9H‐carbazole)‐alt‐5,5‐(4′,7′‐di(thien‐2‐yl)‐2H‐benzimidazole‐2′‐spiro‐4′′‐((2′′′‐ethylhexyl)oxy)‐cyclohexane)] (PCDTEHOCHBI) for photovoltaic application. These alternating copolymers show low‐band gap properties caused by internal charge transfer from an electron‐rich unit to an electron‐deficient moiety. HOMO and LUMO levels are –5.53 and –3.86 eV for PCDTCHBI, and –5.49 and –3.84 eV for PCDTEHOCHBI, respectively. Optical band gaps of PCDTCHBI and PCDTEHOCHBI are 1.67 and 1.65 eV, respectively. The new carbazole based the 2H‐benzimidazole polymers show 0.11–0.13 eV lower values of band gaps as compared to that of carbazole based benzothiadiazole polymer, poly[N‐9′‐heptadecanyl‐2,7‐carbazole‐alt‐5,5‐(4′,7′‐di‐2‐thienyl‐2′,1′,3′‐benzothiadiazole)] (PCDTBT), while keeping nearly the same deep HOMO levels. The power conversion efficiencies of PCDTCHBI and PCDTEHOCHBI blended with [6,6]phenyl‐C₇₁‐butyric acid methyl ester (PC₇₁BM) are 1.03 and 1.15%, respectively. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

Synthesis and characterization of thiazolothiazole‐based polymers and their applications in polymer solar cells

A novel series of thiazolothiazole (Tz)‐based copolymers, poly[9,9‐didecylfluorene‐2,7‐diyl‐alt‐2,5‐bis‐(3‐hexylthiophene‐2‐yl)thiazolo[5,4‐d]thiazole] (P1), poly[9,9‐dioctyldibenzosilole‐2,7‐diyl‐alt‐2,5‐bis‐(3‐hexylthiophene‐2‐yl)thiazolo[5,4‐d]thiazole] (P2), and poly[4,4′‐bis(2‐ethylhexyl)‐dithieno[3,2‐b:2′,3′‐d]silole‐alt‐2,5‐bis‐(3‐hexylthiophene‐2‐yl)thiazolo[5,4‐d]thiazole] (P3), were synthesized for the use as donor materials in polymer solar cells (PSCs). The field‐effect carrier mobilities and the optical, electrochemical, and photovoltaic properties of the copolymers were investigated. The results suggest that the donor units in the copolymers significantly influenced the band gap, electronic energy levels, carrier mobilities, and photovoltaic properties of the copolymers. The band gaps of the copolymers were in the range of 1.80–2.14 eV. Under optimized conditions, the Tz‐based polymers showed power conversion efficiencies (PCEs) for the PSCs in the range of 2.23–2.75% under AM 1.5 illumination (100 mW/cm²). Among the three copolymers, P1, which contained a fluorene donor unit, showed a PCE of 2.75% with a short‐circuit current of 8.12 mA/cm², open circuit voltage of 0.86 V, and a fill factor (FF) of 0.39, under AM 1.5 illumination (100 mW/cm²). © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

Solid‐state NMR as a tool to describe and quantify the morphology of photoactive layers used in plastic solar cells

The optimization and control of the nanomorphology of thin films used as active layer in bulk heterojunction (BHJ) plastic solar cells is of key importance for a better understanding of the photovoltaic mechanisms and for increasing the device performances. Hereto, solid‐state NMR relaxation experiments have been evaluated to describe the film morphology of one of the “work‐horse” systems poly(2‐methoxy‐5‐(3′,7′‐dimethyloctyloxy)‐1,4‐phenylene‐vinylene)/[6, 6]‐phenyl‐C₆₁butyric acid methyl ester (MDMO‐PPV/PCBM) in a quantitative way. Attention is focused on the influence of the processing solvent (toluene vs. chlorobenzene), the blend composition, and the casting technique, that is, spin coating versus doctor blading. It is demonstrated that independently of the solvent and casting technique, part of the PCBM becomes phase separated from the mixed phase. Whereas casting from toluene results in the development of well‐defined PCBM crystallites, casting from chlorobenzene leads to the formation of PCBM‐rich domains that contain substructures of weakly organized PCBM nanoclusters. The amount and physico‐chemical state of the phase separated PCBM is quantified by solid‐state NMR relaxation times experiments. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011