射流注入角对平板气膜冷却特性影响的实验研究

本文对不同射流注入角的典型单排孔冷却结构的平板气膜冷却特性进行了实验研究,研究对象为轴线与主流来流方向分别成30°、60°、90°的射流孔板,对它们在吹风比为0.5、1.0、1.5条件下的射流孔下游的绝热气膜冷却效率分布特性进行了分析.在吹风比M=0.5时,三个射流注入角条件下近孔区域都能形成较好的冷气覆盖效果;M=1.0时,三者的下游横向平均冷却效率基本相同;M=1.5时,注入角60°的条件下冷却效果最好.     

Structural evolution at the initial growth stage of perylene on Au(1 1 1)

We report on the structural evolution at the initial growth stage of perylene thin films on Au(1 1 1) surface. Scanning tunneling microscopy and spectroscopy have been employed to investigate the structural and electronic properties at 78 K. Rapid molecular diffusion was observed at low submonolayer coverage. Molecules form an ordered structure at monolayer coverage. For the second layer, impinging molecules nucleate into molecular islands with an ordered intermediate structure.     

Kinetic stabilization of Fe film on GaAs(1 0 0): An in situ X-ray reflectivity study

We study the growth of Fe films on GaAs(1 0 0) at a low temperature, 140 K, by in situ X-ray reflectivity (XRR) using synchrotron radiation. The XRR curves are well modeled by a single Fe layer on GaAs both at the growth temperature and after annealed at the room temperature. We found that the surface became progressively rougher during the growth with the growth exponent, β_S = 0.43 ± 0.14. The observed β_S is attributed to the restricted interlayer diffusion at the low growth temperature. The change of the interface width during growth was minimal. When the Fe film was annealed to room temperature, the surface smoothed, keeping the interface width almost unchanged. The confinement of the interface derives from that the diffusion of Ga and As proceeds via the inefficient bulk diffusion, and the overlying Fe film is kinetically stabilized.     

Optimization of thin-film design for multi-layer dielectric grating

Thin-film design used to fabricate multi-layer dielectric (MLD) gratings should provide high transmittance during holography exposure, high reflectance at use wavelength and sufficient manufacturing latitude of the grating design making the MLD grating achieve both high diffraction efficiency and low electric field enhancement. Based on a (HLL)⁹H design comprising of quarter-waves of high-index material and half-waves of low-index material, we obtain an optimum MLD coating meeting these requirements by inserting a matching layer being half a quarter-wave of Al₂O₃ between the initial design and an optimized HfO₂ top layer. The optimized MLD coatings exhibits a low reflectance of 0.017% under photoresist at the exposure angle of 17.8° for 413 nm light and a high reflectance of 99.61% under air at the use angle of 51.2° for 1053 nm light. Numerical calculation of intensity distribution in the photoresist coated on the MLD film during exposure shows that standing-wave patterns are greatly minimized and thus simulation profile of photoresist gratings after development demonstrates smoother shapes with lower roughness. Furthermore, a MLD gratings with grooves etched into the top layer of this MLD coating provides a high diffraction efficiency of 99.5% and a low electric field enhancement ratio of 1.53. This thin-film design shows perfect performances and can be easily fabricated by e-beam evaporation.     

Growth and surface characterization of sputter-deposited molybdenum oxide thin films

Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of an argon-oxygen gas mixture under varying conditions of substrate temperature (T_s) and oxygen partial pressure (pO₂). The effect of T_s and pO₂ on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy-dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of T_s and pO₂ on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 °C under 62.3% O₂ pressure were stoichiometric and polycrystalline MoO₃. Films grown at lower pO₂ were non-stoichiometric MoO_x films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO₃ films.     

First nucleation steps during deposition of SiO2 thin films by plasma enhanced chemical vapour deposition

The initial nucleation stages during deposition of SiO₂ by remote plasma enhanced chemical vapour deposition (PECVD) have been monitored by XPS inelastic peak shape analysis. Experiments have been carried out on two substrates, a flat ZrO₂ thin film and a silicon wafer with a native silicon oxide layer on its surface. For the two substrates it is found that PECVD SiO₂ grows in the form of islands. When the SiO₂ particles reach heights close to 10 nm they coalesce and cover completely the substrate surface. The particle formation mechanism has been confirmed by TEM observation of the particles grown on silicon substrates. The kinetic Monte Carlo simulation of the nucleation and growth of the SiO₂ particles has shown that formation of islands is favoured under PECVD conditions because the plasma species may reach the substrate surface according to off-perpendicular directions. The average energy of these species is the main parameter used to describe their angular distribution function, while the reactivity of the surface is another key parameter used in the simulations.     

Ab-initio calculations and STM observations on tetrapyridyl and Fe(II)-tetrapyridyl-porphyrin molecules on Ag(1 1 1)

We modelled the adsorption of tetra-pyridyl-porphyrin (TPyP) and Fe(II)-tetra-pyridyl- porphyrin (Fe-TPyP) molecules on Ag(1 1 1). TPyP adsorbs in a flat geometry at a distance of 5.6 Å from the surface. The dihedral angle of the pyridyl rings is found to be 70°. The molecular structure remains largely unaffected by the adsorption. The structure of the molecular adlayer should thus be determined mainly by lateral intermolecular interactions. These conclusions are confirmed by scanning tunnelling microscopy observations. Upon metalation spin-polarized states with strong Fe d-character appear in Fe-TPyP near the centre of the gap between the highest occupied and the lowest unoccupied states of a TPyP molecule. We find also that the gap is widened in the presence of Fe. This implies a shift of 0.3 eV of unoccupied states as identified by scanning tunnelling spectroscopy simulations and confirmed by experimental data.     

Investigation of metal nanoparticles produced by laser ablation and their catalytic activity

Polydiphenylsilylenemethylene (PDPhSM) thin films, which are difficult to fabricate by conventional methods because of their insolubility and high melting point, have been synthesized by using laser-ablated metal nanoparticles for the thermal ring-opening polymerization of 1,1,3,3-tetraphenyl-1,3-disilacyclobutane (TPDC) in this paper. TPDC was first evaporated on silicon substrates and then exposed to metal (Pt, Cu and Ag) nanoparticles deposition by laser ablation prior to heat treatment. The catalytic activity of Pt, Cu and Ag nanoparticles has been studied. The results showed that the mean diameter of Pt nanoparticles was the smallest, Cu nanoparticles the moderate and Ag nanoparticles the biggest, while the polymerization efficiency for Pt nanoparticles was the highest, Cu nanoparticles the moderate and Ag nanoparticles the lowest. In addition, the penetration behaviours of Pt, Cu and Ag nanoparticles into the TPDC monomer films during laser ablation were different due to the particle size or the chemical interaction between metal nanoparticles and TPDC molecules.     

Thin film stress measurement by instrumented optical fibre displacement sensor

Residual stress can adversely affect the mechanical, electronic, optical and magnetic properties of thin films. This work describes a simple stress measurement instrument based on the bending beam method together with a sensitive non-contact fibre optical displacement sensor. The fibre optical displacement sensor is interfaced to a computer and a Labview programme enables film stress to be determined from changes in the radius of curvature of the film-substrate system. The stress measurement instrument was tested for two different kinds of thin film, hard amorphous carbon nitride (CN) and soft copper (Cu) films on silicon substrates deposited by RF magnetron sputtering. Residual stress developed in 500 nm thick CN thin films deposited at substrate temperatures in the range 50-550 °C was examined and it was found that stress in CN films decreased from 0.83 to 0.44 GPa compressive with increase of substrate temperature. Residual stress was found to be tensile (121 MPa) for Cu films of thickness 1500 nm deposited at room temperature.     

Pyroelectric nano-rods grown inside alumina nano-pores

This paper reports the formation and properties of nano-composite pyroelectric thin films. They consist of pyroelectric triglycine sulfate (TGS) single-crystal nano-rods grown inside a highly dense array of alumina pores (about 65 nm diameter and density of 1011 cm⁻²). The nucleation and growth of the TGS single crystals are obtained by precipitation from a supersaturated aqueous solution. Nucleation is preferred only at the bottom of the pores due to a tight control of temperature, composition and pore diameter. Growth of single crystals with preferred crystallographic orientation is obtained with the aid of an applied electric field. Various crystallographic orientations (1 0 0) (−1 1 0) (−1 2 0) are obtained separately as a single preferred orientation by changing the amplitude of the electric field during crystal growth. The films exhibit ferroelectric behavior.