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31.
使用结构简单的单温炉设备,通过三步升温热解二茂铁、三聚氰氨混合物方法,在二氧化硅、多晶陶瓷基底上分别合成了碳纳米管阵列、碳纳米管捆束.使用扫描电子显微镜、透射电子显微镜、电子能量损失谱和x射线光电子能谱对合成样品进行了结构和成分分析.结果显示:两种基底上合成的纳米管均为多壁纯碳管;生长于光滑二氧化硅表面的碳纳米管具有高度取向性和一致的外径,长度为10—40μm.碳纳米管采取催化剂顶端生长模式并展示出类杯状形貌;生长于粗糙多晶陶瓷表面的碳纳米管捆束随机取向,碳纳米管直径为15—80nm,长度在几百微米,展示 关键词: 碳纳米管 热解法 三步升温工艺  相似文献   
32.
利用场发射显微镜和四极质谱计研究了充入高纯O2的四极质谱和O2对单壁碳纳米管场发射的影响.单壁碳纳米管经过约1000℃的热处理得到清洁态场发射像后,充入O2,分别测量了O2吸附和脱附后场发射的I V特性.实验观测到在单壁碳纳米管上O2的吸附使场发射电流减小,说明逸出功增加.在10-4Pa的O2压强下对单壁碳纳米管进行约1000℃的热处理,可以产生氧化刻蚀作用,观测到场发射像的变化,并测量了氧化刻蚀产生的I V特性变化. 关键词: 单壁碳纳米管 场发射显微镜 场发射 四极质谱  相似文献   
33.
The Mannich-type reaction of imines with (1-methoxy-2-methylpropenyloxy)trimethylsilane and aza-Diels-Alder reaction of imines with Danishefsky's diene can be carried out in scCO2 in the presence of lithium heptadecafluorooctanesulfonate which offer a way to synthesize β-amino carbonyl compounds and nitrogen-containing six-membered ring compounds under environmentally benign conditions.  相似文献   
34.
The reversible nonlinear conduction (RNC) in of high‐density polyethylene/acetylene carbon black composites with different degrees of crosslinking was studied above room temperature and below the melting point of high‐density polyethylene (HDPE). The experimental current density‐electric field strength curves can be overlapped onto a master curve, suggesting that the microscopic mechanisms for the appearance of RNC exist regardless of the ambient temperature and the crosslinking degree of the HDPE matrix. The relationship between the crossover current density and the linear conductivity can be explained in the framework of the dynamic random‐resistor‐network model. According to these results, two electron‐tunneling models are suggested to interpret the microscopic conduction behavior. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 1212–1217, 2004  相似文献   
35.
Fixed‐site–carrier membranes were prepared for the facilitated transport of CO2 by casting polyvinylamine (PVAm) on various supports, such as poly(ether sulfone) (PES), polyacrylonitrile (PAN), cellulose acetate (CA), and polysulfone (PSO). The cast PVAm on the support was crosslinked by various methods with glutaraldehyde, hydrochloric acid, sulfuric acid, and ammonium fluoride. Among the membranes tested, the PVAm cast on polysulfone and crosslinked by ammonium fluoride showed the highest selectivity of CO2 over CH4 (>1000). The permeance of CO2 was then measured to be 0.014 m3 (STP)/(m2 bar h) for a 20 μm thick membrane. The effect of the molecular weight of PVAm and feed pressure on the permeance was also investigated. The selectivity increased remarkably with increasing molecular weight and decreased slightly with increased pressure in the range of 1 to 4 bar. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 4326–4336, 2004  相似文献   
36.
研究了多壁碳纳米管(MWNTs)薄膜的湿敏特性,实验所用的多壁碳纳米管是用热灯丝化学气相沉积法(CVD)合成的.分别对未修饰和修饰的多壁碳纳米管膜温度和湿度特性进行研究后发现,修饰的多壁碳纳米管对温度和湿度非常敏感,且对湿度的响应时间和恢复时间短,重复性好.而未修饰的多壁碳纳米管对温度和湿度不太敏感.对修饰多壁碳纳米管的湿敏特性进行了理论分析,给出了其理论表示式. 关键词: 多壁碳纳米管 化学修饰 湿敏特性 物理吸附  相似文献   
37.
 用射频等离子体方法在玻璃基底上制备的类金刚石(DLC)薄膜,采用离子注入法掺氮,并对掺氮DLC薄膜紫外(UV)辐照前后的性能变化进行了研究。研究结果表明:随氮离子注入剂量及UV辐照时间的增加,位于2 930cm-1附近的SP 3C-H吸收峰明显变小,而位于1 580cm-1附近的SP2C-H吸收峰则明显增强,薄膜的电阻率明显呈下降趋势;随UV辐照时间的增加,位于1 078cm-1附近的Si-O-Si键数量及位于786cm-1附近的Si-C键数量明显增加。即氮离子注入和UV辐照明显改变了DLC薄膜的结构与特性。  相似文献   
38.
Radioactive tracer studies confirm the earlier electrochemical results that carbon monoxide can virtually completely displace iodine adatoms. For the first time, it is found that iodine adatoms are not displaced by carbon monoxide when iodide anions are adsorbed in the presence of an upd silver monolayer. The possible reasons for the effect observed are discussed.  相似文献   
39.
Fe2(CO)6(μ-S2) was used as a single source precursor in attempt to produce FeS film via MOCVD. Pyrolysis of Fe2(CO)6(μ-S2) at temperature below 500℃ produced Fe1-xS or Fe7S8 powder as indicated by its powder X-ray spectra. At 750 ℃, polycrystalline FeS powder was obtained. In film deposition, polycrystalline Fe1-xS or Fe7Ss films were obtained on Si(100) and Ag/Si(100) substrates below 500 ℃. SEM micrographs showed the film on Si(100) substrate containing whisker like grains. However, pillar like grains were obtained on Ag/Si(100) substrate.Deposition rates are also different for different substrates as evaluated by the thickness of the films, which were obtained by SEM micrographs of the cross section of the films. At 750℃, similar polycrystalline Fe1-xS or Fe7S8 film was obtained.  相似文献   
40.
STM, STS, LEED and XPS data for crystalline θ-Al2O3 and non-crystalline Al2O3 ultra-thin films grown on NiAl(0 0 1) at 1025 K and exposed to water vapour at low pressure (1 × 10−7-1 × 10−5 mbar) and room temperature are reported. Water dissociation is observed at low pressure. This reactivity is assigned to the presence of a high density of coordinatively unsaturated cationic sites at the surface of the oxide film. The hydroxyl/hydroxide groups cannot be directly identify by their XPS binding energy, which is interpreted as resulting from the high BE positions of the oxide anions (O1s signal at 532.5-532.8 eV). However the XPS intensities give evidence of an uptake of oxygen accompanied by an increase of the surface coverage by Al3+ cations, and a decrease of the concentration in metallic Al at the alloy interface. A value of ∼2 for the oxygen to aluminium ions surface concentration ratio indicates the formation of an oxy-hydroxide (AlOxOHy with x + y ∼ 2) hydroxylation product. STM and LEED show the amorphisation and roughening of the oxide film. At P(H2O) = 1 × 10−7 mbar, only the surface of the oxide film is modified, with formation of nodules of ∼2 nm lateral size covering homogeneously the surface. STS shows that essentially the valence band is modified with an increase of the density of states at the band edge. With increasing pressure, hydroxylation is amplified, leading to an increased coverage of the alloy by oxy-hydroxide products and to the formation of larger nodules (∼7 nm) of amorphous oxy-hydroxide. Roughening and loss of the nanostructure indicate a propagation of the reaction that modifies the bulk structure of the oxide film. Amorphisation can be reverted to crystallization by annealing under UHV at 1025 K when the surface of the oxide film has been modified, but not when the bulk structure has been modified.  相似文献   
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