Photocatalytic Reduction of NO with C2H6 on a Hollandite-Type Catalyst

The photocatalytic reduction of nitrogen monoxide (NO) with ethane on the hollandite type catalyst (K₂Ga₂Sn₆O₁₆KGSO) was investigated. Using a closed-gas circulating system equipped with a Q-MASS detector and in-situ diffuse reflectance FT-IR spectroscopy. The reactant gases of NO and ¹³C₂H₆ decreased with the increasing irradiation time. In contrast, the N₂ yield increased proportionally to the conversion of ¹³C₂H₆. Nitrogen oxides such as N₂O did not reach their detectable levels. The NO adsorbed on KGSO was found to change to its activated species by UV irradiation. The oxidized products of C₂H₆ such as CH₃CHO increased in proportion to the reaction time. The present results strongly suggest that KGSO has remarkable photocatalytic activity for the reduction of NO with C₂H₆.     

Oxidation of Methanol on Pt,Pt–Ru,and Pt–Ru–Mo Electrocatalysts Dispersed in Polyaniline: An in situ Infrared Reflectance Spectroscopy Study

The electrochemical oxidation of methanol was investigated on a Pt–Ru–Mo catalyst with an in situ infrared reflectance spectroscopy. The electrocatalysts were prepared by an electrochemical deposition and dispersed in a conducting three-dimensional matrix of polyaniline (PAni). We observed that CO₂ is produced from methanol oxidation at 350 mV vs. RHE on PAni/Pt–Ru–Mo, which is 100 mV less negative than on PAni/Pt–Ru and 200 mV less than on PAni/Pt. The results suggest that Pt–Ru–Mo is less sensitive to CO_ADS poisoning than Pt–Ru and much more sensitive than Pt. Large differences are observed concerning the average wavenumber of _ADS between Pt–Ru–Mo, Pt–Ru, and Pt.     

Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloride

Plasma-chemical reduction of SiCl₄ in mixtures with H₂ and Ar has been studied by optical emission spectroscopy (OES) and laser interferometry techniques. It has been found that the Ar:H₂ ratio strongly affects the plasma composition as well as the deposition (r _D) and etch (r _E) rates of Si: H, Cl films and that the electron impact dissociation is the most important channel for the production of SiCl_x species, which are the precursors of the film growth. Chemisorption of SiCl_x and the reactive surface reaction SiCl_x+H–SiCl_(x–1)0+HCl are important steps in the deposition process. The suggested deposition model givesr _D [SiCl_x][H], in agreement with the experimental data. Etching of Si: H, Cl films occurs at high Ar: H₂ ratio when Cl atoms in the gas phase become appreciable and increases with increasing Cl concentration. The etch rate is controlled by the Cl atom chemisorption step.     

The use of silicon in the preparation of apolar glass capillary columns

As an extention of previous reports, variables affecting the performance of columns modified by silicon deposition have been optimized. The aim of this work was to produce thermostable apolar glass capillary columns regardless of the glass type used and to maintain column performance under stressful conditions. The main parameters studied were the influence of glass type, leaching effects, and silicon layer thickness on column activity. Deactivation and stationary phase conditions were held constant. Both coated and uncoated columns were tested. The thickness of the silicon layer was found to be relatively unimportant. There was no difference whether soft glass or borosiiicate glass was used and leaching before silicon deposition did not influence column activity. Bare silicon surfaces showed considerable activity especially in respect to interactions with free acids and bases. There are indications that the surface consists of silicon oxide and other oxygenated forms of silicon rather than of the element. Treatment of the silicon layers with dilute hydrofluoric acid and the strict exclusion of traces of oxygen and water did not improve the situation. In spite of such specific interactions, silicon surfaces were easily deactivated by heat treatment with polysiloxanes. Silicon surfaces deactivated by baking with octamethyltetrasiloxane at 400°C are inert and temperature stable and show characteristics similar to persilylated surfaces.     

负载型Au-Pd双金属催化剂的制备及其对CO氧化的催化活性

采用改性的等体积浸渍法制备了SiO2负载的Au-Pd双金属催化剂,考察了催化剂的焙烧温度对CO氧化反应活性的影响.与623,723和773K的条件下焙烧的催化剂相比,673K焙烧的催化剂具有良好的催化CO氧化活性,CO完全转化温度低于398K.应用N2物理吸附、X射线衍射、程序升温还原、CO程序升温脱附及X射线光电子能谱等技术对催化剂进行了表征.结果表明,673K焙烧的催化剂具有最大的比表面积和最小的孔径,存在Au0,Pd0和PdO相,AuxPdy合金相很少;而773K焙烧的催化剂上除了含有Au0,Pd0和PdO相外,还存在明显的AuxPdy合金相.具有大比表面积,小孔径,Au0,Pd0和PdO多相共存的催化剂可使CO的吸附量增加,催化活性提高;而AuxPdy合金相的生成并不能提高催化剂的催化活性.     

Catalytic properties of manganites in the oxidation of CO and hydrocarbon

Manganites with a spinel structure MMn₂O₄ (M = Co, Cu, Zn, Mo) and M¹ _0.5M² _0.5 Mn₂O₄ (M = Co, Cu, Zn, Mg) have been synthesized and tested in the catalytic oxidation of CO, C₃H₆, and ethylbenzene. The dependence of the catalytic activity of the manganites on the nature of the cation has been established. The spinels containing transition metal ions (Cu, Co) are more active. A relation between catalytic and adsorption properties of manganites has been established. The participation of the lattice oxygen in the oxidation of CO to CO₂ has been found. The mechanism of the oxidation is discussed.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No, 11, pp, 2686–2669. November, 1996.     

Stereoselective total synthesis of (S)-Virol C and (S)-1-dehydroxyvirol A

A stereoselective total synthesis of (S)-Virol C and (S)-1-dehydroxyvirol A has been developed, based upon the selective and sequential substitution of the two trimethylsilyl groups of readily available 1,4-bis(trimethylsilyl)-1,3-butadiyne.     

Electrosorption of hydrogen into palladium-gold alloys

Hydrogen electrosorption into Pd-Au alloys has been studied in acidic solutions (1 M H₂SO₄) using cyclic voltammetry. Pd-Au electrodes with limited volume were prepared by electrochemical co-deposition. It was found that the maximum H/(Pd+Au) ratios decrease monotonically with increasing gold content and reach zero at ca. 70 at% Au. Similarly to the case of Pd limited volume electrodes, two peaks in the hydrogen region, corresponding to two types of sorbed hydrogen, are observed on voltammograms for Pd-rich alloys. The hydrogen capacity, H/(Pd+Au), measured electrochemically, depends on the sweep rate in the cyclic voltammetry experiments, which suggests that two different mechanisms for hydrogen desorption from the Pd-Au alloy are possible. After a strong decrease of Pd concentration at the electrode surface, caused by long cyclic polarization to sufficiently anodic potentials, the amount of absorbed hydrogen is still significant for alloys initially rich in Pd. The results obtained from CO adsorption experiments suggest that only Pd atoms are active in the hydrogen absorption/desorption process. Electronic Publication     

Catalytic properties of spinel-type complex oxides in oxidation reactions

The catalytic activity of M^IM^II ₂O₃ spinel-type complex oxides (M^I = Cu, Ni, Mn, Zn, Mg, Co, M^II = Co, Cr, Al) in the oxidation of CO and ethylbenzene has been investigated. The Co-containing catalysts were more active than the Cr- and Al-containing catalysts. The nature of the cation influenced the catalytic activity. Higher activities were observed for the catalysts containing two transition elements. A correlation between the catalytic and adsorption properties was established.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 10, pp. 1730–1732, October, 1994.     

Quo Vadis total reflection X-ray fluorescence?

The multielement trace analytical method ‘total reflection X-ray fluorescence’ (TXRF) has become a successfully established method in the semiconductor industry, particularly, in the ultra trace element analysis of silicon wafer surfaces. TXRF applications can fulfill general industrial requirements on daily routine of monitoring wafer cleanliness up to 300 mm diameter under cleanroom conditions. Nowadays, TXRF and hyphenated TXRF methods such as ‘vapor phase decomposition (VPD)-TXRF’, i.e. TXRF with a preceding surface and acid digestion and preconcentration procedure, are automated routine techniques (‘wafer surface preparation system’, WSPS). A linear range from 10⁸ to 10¹⁴ [atoms/cm²] for some elements is regularly controlled. Instrument uptime is higher than 90%. The method is not tedious and can automatically be operated for 24 h/7 days. Elements such as S, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Br, Sn, Sb, Ba and Pb are included in the software for standard peak search. The detection limits of recovered elements are between 1×10¹¹ and 1×10⁷ [atoms/cm²] depending upon X-ray excitation energy and the element of interest. For the determination of low Z elements, i.e. Na, Al and Mg, TXRF has also been extended but its implementation for routine analysis needs further research. At present, VPD-TXRF determination of light elements is viable in a range of 10⁹ [atoms/cm²]. Novel detectors such as silicon drift detectors (SDD) with an active area of 5 mm², 10 mm² or 20 mm², respectively, and multi-array detectors forming up to 70 mm² are commercially available. The first SDD with 100 mm² (!) area and integrated backside FET is working under laboratory conditions. Applications of and comparison with ICP-MS, HR-ICP-MS and SR-TXRF, an extension of TXRF capabilities with an extremely powerful energy source, are also reported.