Polymorphism in alternating polyketones studied by x-ray diffraction and calorimetry

Differential scanning calorimetry and high temperature x-ray diffraction were used to study the perfectly alternating copolymer of ethene and carbon monoxide (polyketone; POKC2). It was found that oriented POK-C2 fibers show a crystalline phase transition at a temperature between 110–125°C with a 10% change in crystalline density. At this temperature, the crystal structure reported recently (POK-α) is transformed to a crystal structure that was reported in the past for room temperature imperfectly alternating polyketone. The latter structure will be designated as POK-β. The influence of chain defects on the crystal structure was studied by synthesizing terpolymers (POK-C2/C3), in which small amounts of propylene-CO units are incorporated into the polymer backbone. The resulting terpolymers differ from the copolymer by the presence of methyl groups randomly distributed along the polyketone backbone chain. Evidence is presented that indicates that the methyl groups are built into the crystal lattice as defects. With more than 5 mole-% propene the terpolymer fibers crystallize exclusively in the β-modification. Below this level the α/β ratio (at room temperature) increases with decreasing amounts of propene. Both as-synthesized and as-spun POK-C2 were found to consist of both POK-α and POK-β; the α/β ratio depends on the method of preparation. Because the drawn POK-C2 fibers studied here consist exclusively of POK-α, the process of spinning and drawing leads to the transformation of unoriented β-rich material into oriented POK-α. © 1995 John Wiley & Sons, Inc.     

Unique edge structure and stability of fabricated dimer islands on Si(001)

The edge structure and stability of monolayer-high islands fabricated on Si(001) surfaces by scanning tunneling microscopy have been analyzed theoretically. In contrast to the edges of similar islands grown by depositing Si, the properties of edges of fabricated islands are determined by the length of the trench of dimers that are removed to create the island. We demonstrate the possibility of controlling the edge structure, and thus the stability, through a selective process of atom removal.     

Nitroxyl free radical binding to Si(1 0 0): a combined scanning tunneling microscopy and computational modeling study

The ultra-high vacuum scanning tunneling microscope (UHV-STM) was used to investigate the addition of the 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) radical to the Si(1 0 0) surface. Room temperature studies performed on clean Si(1 0 0)-2 × 1 confirm the proposed binding of the unpaired valence electron associated with the singly occupied molecular orbital (SOMO) of the molecule with a Si dangling bond. A strong bias dependence in the topography of isolated molecules was observed in the range of −2.0 to +2.5 V. Semiempirical and density functional calculations of TEMPO bound to a three-dimer silicon cluster model yield occupied state density isosurfaces below the highest occupied (HOMO) and unoccupied state densities isosurfaces above the lowest unoccupied molecular orbital (LUMO) which trend in qualitative agreement with the bias dependent STM topography. Furthermore, the placement of TEMPO molecules on dangling bonds was controlled with atomic precision on the monohydride Si(1 0 0) surface via electron stimulated desorption of H, demonstrating the compatibility of nitroxyl free radical binding chemistries with nanopatterning techniques such as feedback controlled lithography.     

SIMS analysis of residual gas elements with a Cameca IMS-6f ion microprobe

In this paper, we present experimental data for SIMS analysis of residual gas elements (RGEs) with a Cameca IMS-6f ion microprobe. We considered a simple experimental technique, which provides an effective separation of the secondary ions, sputtered from the bulk of a target, and from the molecules, adsorbed on the analyzed surface from the residual atmosphere. The technique needs the sputtering yield of one monolayer (ML) per second to be applied. The method improves (in more than one order of magnitude) the detection limit for RGEs in SIMS analysis, and simultaneously, provides information about the residual atmosphere at the sample surface and in the main chamber of the experimental instrument. The method provides a calibration method for an ion gauge, and can be used for SIMS analysis with a gas (O₂) flooding.     

XRR and GISAXS study of silicon oxynitride films

Thin films of silicon oxynitride have largely replaced pure silicon oxide films as gate and tunnel oxide films in modern technology due to their superior properties in terms of efficiency as boron barrier, resistance to electrical stress and high dielectric strength. A single chamber system for plasma enhanced chemical vapor deposition was employed to deposit different films of SiO_xN_yH_z with 0.85 < x < 1.91. All films were previously characterized by Rutherford back-scattering and infrared spectroscopy to determine the stoichiometry and the presence of various bonding configurations of constituent atoms. We used X-ray reflectivity to determine the electron density profile across the depth, and we showed that the top layer is densified. Moreover, grazing incidence small-angle X-ray scattering was used to study inhomogeneities (clustering) in the films, and it is shown that plate-like inhomogeneities exist in the top and sphere-like particles at the bottom part of the film. Their shape and size depend on the stoichiometry of the films.     

钯II催化CO/乙烯共聚加压原位红外光谱研究

聚酿以其优良的物理、化学性能及原料（CO乙烯）简单易得的优点，在世界范围内已引起人们的普遍关注．为寻找价廉的催化剂或改良高效或（11）一双磷催化剂以推动聚酮的工业化进程，必须对共聚机理进行深入的研究．S；，n［’，’1、DrentP］等人根据对产品主链和端基的分析首先     

Chemical analysis of acidic silicon etch solutions: I. Titrimetric determination of HNO3, HF, and H2SiF6

The chemical etching of silicon using HF-HNO₃ mixtures is a widely used process in the processing of silicon wafers for microelectronic or photovoltaic applications. The control of the etch bath composition is the necessary condition for an effective bath utilization, for the replenishment of the consumed acids, and to maintain a certain etch rate. The present paper describes two methods for the total analysis of the individual etch bath constituents HF, HNO₃, and H₂SiF₆. Both methods start with an aqueous acid-base titration determining the total acid concentration and the concentration of H₂SiF₆. The first method is an acid-base titration using a 0.1 mol L⁻¹ methanolic solution of cyclohexylamine (CHA) as non-aqueous titrant to determine the content of nitric acid. Then, the amount of hydrofluoric acid is calculated from the difference between the total acid and nitric acid content. The second method is based on the determination of the total fluoride concentration using a fluoride ion-selective electrode (F-ISE). The content of hydrofluoric acid is obtained from the difference between the total fluoride content and the amount of fluoride bound as H₂SiF₆. The amount of nitric acid results finally calculated as difference to the total acid content.     

极谱杂多酸吸附波测定合金中硅

在pH2—4的盐酸介质中,硅(Ⅳ)、锑(Ⅲ)与铝(Ⅵ)形成三元杂多酸,此三元杂多酸在0.4mol/L的HCl中能迅速在滴汞电极上还原而产生灵敏的极谱电流。其峰电位为-0.30V(vs.SCE)。测定下限是8×10~(-8)mol/L。     

三效催化剂作用下的NO+CO催化反应机理

NO与CO在Pt/Rh/Pd及载体组成的三效催化剂上的氧化还原应用是控制汽车尾气对空气污染的一个关键反应，这一反应随着近年来对环境保护的日益重视而成为国内外研究的热点，本文主要综述了NO及CO在Pt,Rh,Pd上的吸附及反应机理的实验及理论研究现状，总结得出：在三效催化剂对NO CO的催化反应中，Pt,Pd对CO的催化氧化起主要作用，而Rh对NO的解离有很好的活化作用。