ESR EVIDENCE OF AN ELECTRON TRANSFER BETWEEN ARYLPHOSPHINES AND ARYLNITROSO COMPOUNDS

Abstract

Electron transfer between arylphosphines and arylnitroso compounds gives rise to the formation of free radicals which have been characterized by esr     

1,3-Migration of Trimethylsilyl Group from Carbon to Oxygen in Highly Sterically Hindered Silanol of the Type (Me 3 Si) 3 CSi(C 6 H 4 Me- p )MeOH and Reaction of the Related Iodide with Iodine Monochloride and Iodine Monobromide

The silanol (Me 3 Si) 3 CSi(C 6 H 4 Me- p )MeOH has been shown to isomerize to (Me 3 Si) 2 CHSi(C 6 H 4 Me- p )(Me)(OSiMe 3 ) when it was kept at room temperature for 10 h in 0.2 M NaOMe/MeOH. Corresponding isomerizations of the above silanol (to give (Me 3 Si) 2 CHSi(C 6 H 4 Me- p ) (Me)(OSiMe 3 )) are complete after 26 h under reflux in pyridine. The reaction involve 1,3-migration from carbon to oxygen within a silanolate ion to give a carbanion, which rapidly acquires a proton from the solvent. Treatment of (Me 3 Si) 3 CSi(C 6 H 4 Me- p )MeOH with MeLi in Et 2 O/THF give, by the same rearrangement, the organolithium reagent (Me 3 Si) 2 CLiSi(C 6 H 4 Me- p )(Me)(OSiMe 3 ) which on treatment with Me 2 SiHCl gives (Me 3 Si) 2 C(SiMe 2 H)Si(C 6 H 4 Me- p )(Me)(OSiMe 3 ) and (Me 3 Si) 2 CHSi(C 6 H 4 Me- p )(Me)(OSiMe 3 ). When the experiment was repeated, but with Me 3 SiCl in place of Me 2 SiHCl, it gives exclusively (Me 3 Si) 2 CHSi(C 6 H 4 Me- p )(Me)(OSiMe 3 ). Treatment of the organolithium reagent (Me 3 Si) 2 CLiSi(C 6 H 4 Me- p )(Me)(OSiMe 3 ) with Mel gives exclusively (Me 3 Si) 2 CMeSi(C 6 H 4 Me- p )(Me)(OSiMe 3 ). The related iodide (Me 3 Si) 3 CSi(C 6 H 4 Me- p )Mel reacts with ICI and IBr to give rearranged (Me 3 Si) 2 C(SiMe 2 X)Si(C 6 H 4 Me- p )Me 2 and unrearranged products (Me 3 Si) 3 CSi(C 6 H 4 Me- p )MeX, (X = Cl, Br) respectively. The rearranged bromide (Me 3 Si) 2 C(SiMe 2 Br)Si(C 6 H 4 Me- p )Me 2 reacts with a range of silver [I] salts AgY (Y = OOCCH 3 , SO 4 2 m ) and Mercury [II] salt HgY 2 (Y = OOCCH 3 , SO 4 2 m ) in glacial CH 3 COOH to give the corresponding species (Me 3 Si) 2 C(SiMe 2 OOCCH 3 )Si(C 6 H 4 Me- p )Me 2 . The reaction of the bromide with AgBF 4 in MeOH or i -PrOH give the corresponding rearranged products (Me 3 Si) 2 C(SiMe 2 Y)Si(C 6 H 4 Me- p )Me 2 (Y = --OMe, --OPr i ).     

A silicon-position dependent 6-endo-trig cyclization during Tsuji–Trost alkylation

Two silylated cyclohexenes products have been prepared by using a Tsuji–Trost palladium-catalyzed cyclization. It involves the generation of a cationic π-allylic palladium complex bearing a triethylsilyl group on C-3, which cyclizes via a 6-endo-trig process to afford the cyclohexene derivatives. It is also demonstrated that the position of the silyl group on the starting allylic substrate strongly influenced the reaction. It could favor either the production of the expected cyclohexenyl ring or a diene by an elimination that occurs on the silyl-substituted C-2 π-allylic palladium complex.     

Improvement in the light conversion efficiency of silicon solar cell by spin coating of CuO,ZnO nanoparticles and CuO/ZnO mixed metal nanocomposite material

Synthesis of pure Zinc oxide (ZnO), Copper oxide (CuO) nanoparticles (NPs) and their (ZnO/CuO) nanocomposites (NCs) in 1:1 M ratio were successfully prepared by co-precipitation method. The structural properties of the as synthesized nanoparticles and nanocomposite materials were investigated using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD) techniques. Optical band-gap studies were done using UV–Visible absorption spectroscopy. Photovoltaic properties of pure ZnO NPs, CuO NPs and ZnO/CuO NCs coated over a single-crystalline silicon solar cell were carried out to compare improvement of light-conversion efficiency in coated solar cell. The maximum light conversion efficiencies were found to be of 8.02% for CuO (3 mg/ml concentration) and 7.28% for ZnO NPs (3 mg/ml concentration), whereas that of mixed metal nanocomposite CuO/ZnO NCs was found to be 7.62%. at very low concentration of 1 mg/ml. This indicates with low concentration of mixed metal NCs an improvement in light efficiency can be obtained. The enhancement in efficiency could be due to formation of p - n heterojunction by CuO/ZnO NCs composites which enhances the number of electrons and holes participating in conduction on the surface.     

Room-temperature magnetic properties of SiC based nanowires synthesized via microwave heating method

Two kinds of ferromagnetic SiC based nanowires with and without Ni catalyst were successfully synthesized by employing microwave heating method. The comprehensive characterizations and vibrating sample magnetometer (VSM) have been applied to investigate the micro-structures and magnetic properties of as-grown nanowires. For the nanowires synthesized without using Ni catalyst, the diameters and lengths are in the range of 20–60 nm and dozens of micrometers, respectively. Particularly, the results of transmission electron microscopy (TEM) show that the nanowires consist of SiC core and SiO_x shell. The SiC/SiO_x coaxial nanowires exhibit room-temperature ferromagnetism with saturation magnetization (Ms) of 0.2 emu/g. As to the nanowires obtained using Ni catalyst, the scanning electron microscopy (SEM) results indicate that the Ni catalyzed nanowires have a nano-particle attached on the tip and a uniform diameter of approximately 50 nm. The vapor-liquid-solid (VLS) growth mechanism can be used to explain the formation of the Ni catalyzed nanowires. The detection result of VSM indicates that the Ni catalyzed nanowires possess the paramagnetism and the ferromagnetism, simultaneously. The enhancement of the ferromagnetism, compared with the SiC/SiO_x coaxial nanowires, could be attributed to the Ni₂Si and NiSi phases.     

Low power Electro-optical filter: Constructed using silicon nanobeam resonator and PIN junction

In this paper, a high tunable Electro-optical filter is designed and simulated with low electric power consumption. A silicon nanobeam resonator based on one-dimensional photonic crystal in the form of Fabry–Perot structure, silicon-on-insulator waveguide, is proposed with a PIN junction. In designing nanobeam resonator, “deterministic design method” is used to achieve the high quality factor and high-transmission rate. Tuning of the resonant wavelength in the output channel of the filter is achieved by manipulating the refractive index of the active area by using the free-carrier dispersion effect. The output wavelengths of designed device can be tuned for the telecom-friendly 1.55 µm range. The device shows a wavelength shift higher than 3 nm for a power consumption of only 0.9 mW. Finally, the simulation results show that the provided device can be considered as a narrowband and tunable Electro-optical filter that is suitable for DWDM communication system.     

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the “n⁺” source/drain regions and “p⁺” body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of ∼50.0 V, an average ON-resistance of 48.7 mΩ-mm² and a peak transconductance of 53.6 μS/μm similar to that of a comparable LDMOS.     

硅钙合金中钙含量的测定

研究了用一氧化二氮-乙炔火焰原子吸收光谱法测定硅钙合金中钙,并对样品消化处理条件和干扰因素进行了综合考虑.该法灵敏度高、步骤简单,操作容易掌握,干扰少等特点.其相对标准偏差均小于1.0%(n=6).加标回收率均为97.0%-100.0%范围内,本法完全达到了仪器分析质量与质量控制要求.     

1200 V碳化硅功率MOSFET低温特性的实验表征及分析

碳化硅功率MOSFET是宽禁带功率半导体器件的典型代表,具有优异的电气性能。基于低温环境下的应用需求,研究了1200 V碳化硅功率MOSFET在77.7 K至300 K温区的静/动态特性,定性分析了温度对碳化硅功率MOSFET性能的影响。实验结果显示,温度从300 K降低至77.7 K时,阈值电压上升177.24%,漏-源极击穿电压降低32.99%,栅极泄漏电流降低82.51%,导通电阻升高1142.28%,零栅压漏电流降低89.84%(300 K至125 K)。双脉冲测试显示,开通时间增大8.59%,关断时间降低16.86%,开关损耗增加48%。分析发现,碳化硅功率MOSFET较高的界面态密度和较差的沟道迁移率,是导致其在低温下性能劣化的主要原因。     

硅的原子吸收光谱分析进展

对近十年来用原子吸收光谱法测定硅的情况进行评述．重点介绍用石墨炉测定硅时，为了避免硅与石墨炉中碳形成难熔碳化硅影响测定硅的灵敏度而使用的各种化学改进剂，涂层石墨管和一些新的实验技术．引用参考文献４２篇．