大脑能量代谢和神经传递动力学的NMR测定方法

能量代谢和神经传递是生命的基石,它们与所有神经性和精神性疾病都有互为因果的关系,因此其研究对于脑功能的认识具有重要意义. 正常情况下,葡萄糖代谢是大脑能量的主要来源,但定量描述大脑内糖类物质与神经传递动力学参数的研究方法是该领域内的一个瓶颈问题. 核磁共振（NMR）方法以其特有的优势迅速成为该研究领域内的重要的研究工具. 本文重点旨在对大脑中能量代谢和神经传递动力学进行研究的NMR技术、方法及其应用进行较详细的介绍.     

Electronic band transformation from indirect gap to direct gap in Si-H compound

The electronic band structures of periodic models for Si-H compounds are investigated by the density functional theory.Our results show that the Si-H compound changes from indirect-gap semiconductor to direct-gap semiconductor with the increase of H content.The density of states,the partial density of states and the atomic charge population are examined in detail to explore the origin of this phenomenon.It is found that the Si-Si bonds are affected by H atoms,which results in the electronic band transformation from indirect gap to direct gap.This is confirmed by the nearest neighbour semi-empirical tight-binding (TB) theory.     

Si_3N_4粒度对逆反应烧结制备Si_3N_4/SiC复合材料性能的影响

研究了不同粒度的Si3N4粉体对制备的逆反应烧结Si3N4-SiC复合材料性能的影响。结果表明:同一升温制度下,Si3N4粒度从0.074 mm减小到0.045 mm,Si3N4-SiC复合材料体积密度增大,显气孔率变低,抗折强度降低。随着Si3N4粒度减小,材料中的Si3N4含量降低;中温保温从900℃升到1200℃,Si3N4含量升高;高温保温温度从1350℃到1500℃,材料内部氧化程度增高,Si3N4含量降低,SiO2含量升高;Si3N4-SiC复合材料玻璃相增多,玻璃相中有SiO2晶体析出,使得孔隙被生成的玻璃相和发育的SiO2晶粒填充,材料的气孔减少。     

激光晶化形成纳米硅材料的场电子发射性质研究

利用KrF准分子激光退火超薄非晶硅膜,并结合热退火技术制备了单层纳米硅薄膜并研究了薄膜的场电子发射性质.在晶化形成的纳米硅薄膜中可以观测到稳定的场电子发射现象,其开启电场从原始淀积的非晶硅薄膜的17V/μm降低到8.5V/μm,而场发射电流密度可以达到0.1mA/cm².激光晶化后形成的纳米硅材料的场电子发射特性的改善可以从薄膜表面形貌的改变以及高密度纳米硅的形成所导致的内部电场增强作用来解释. 关键词： 纳米硅 场发射 激光晶化     

氮化硅纳米薄膜非平衡热导率实验研究

3ω实验方法是一种可以对薄膜热导率进行瞬时测量的方法。根据3ω方法测试原理,搭建了薄膜导热系数测试平台,并且分别测试低频率段和高频段薄膜与基底的温升以及薄膜热导率。测试结果表明:Si3N4薄膜的热导率随温度的升高而增大;高频段下,热导率受频率影响大,误差大;在低频段下薄膜热导率与频率变化基本无关;基于电子与声子的局部热平衡运输方程假设,S i3N4薄膜的热导率具有极度非平衡性;通过比较电阻、热导率与温度的关系可以看出加热器的尺寸大小会影响薄膜的热导率,最佳加热器的宽度选用20μm左右。     

用于集成光学陀螺的波导谐振腔设计

给出了一种集成光学陀螺谐振腔的优化设计方案,在保证集成光学陀螺精度的同时更利于微型化。选用传输损耗为0.01dB/cm的硅基二氧化硅材料作基底,谐振腔内损耗仅为0.5dB,保证了谐振腔的高清晰度;采用准单模矩形波导结构,利用弯曲波导对一阶模的有效限制实现了光的基模传输,利于谐振腔的小型化;分析了波导的传输损耗、波导耦合器分光比对谐振腔性能及陀螺极限灵敏度的影响,得出波导耦合器分光比的优化参数,并仿真得到谐振腔的谐振清晰度达到70以上。在激光器线宽为30kHz,探测器响应度0.95A/W,积分时间为10s的条件下,系统的极限灵敏度为1.6°/h。     

29Si NMR in solid state with CPMG acquisition under MAS

A remarkable enhancement of sensitivity can be often achieved in ²⁹Si solid-state NMR by applying the well-known Carr–Purcell–Meiboom–Gill (CPMG) train of rotor-synchronized π pulses during the detection of silicon magnetization. Here, several one- and two-dimensional (1D and 2D) techniques are used to demonstrate the capabilities of this approach. Examples include 1D ²⁹Si{X} CPMAS spectra and 2D ²⁹Si{X} HETCOR spectra of mesoporous silicas, zeolites and minerals, where X = ¹H or ²⁷Al. Data processing methods, experimental strategies and sensitivity limits are discussed and illustrated by experiments. The mechanisms of transverse dephasing of ²⁹Si nuclei in solids are analyzed. Fast magic angle spinning, at rates between 25 and 40 kHz, is instrumental in achieving the highest sensitivity gain in some of these experiments. In the case of ²⁹Si–²⁹Si double-quantum techniques, CPMG detection can be exploited to measure homonuclear J-couplings.     

Tetra-σ bonding adsorption of pyridine on Si(1 0 0)-2 × 1

We studied adsorption of pyridine on Si(1 0 0) at room temperature using high resolution photoemission spectroscopy (PES) and near edge X-ray adsorption fine structure (NEXAFS) in the partial electron yield (PEY) mode. The Si 2p, C 1s, N 1s spectra of pyridine on Si(1 0 0) showed that pyridine is chemisorbed on Si(1 0 0)-2 × 1 through the formation of the tetra-σ-bonded structure with the N atom and three C atoms. NEXAFS was conducted to characterize the adsorption geometry of pyridine on Si(1 0 0). The π* orbital of CC bond showed a good angle dependence in C K-edge NEXAFS spectra, and we were able to estimate the adsorption angle between chemisorbed pyridine of CC bond and the Si(1 0 0) surface using an analytical solution of NEXAFS intensity. We find the coexistence of two different tight bridges with the adsorption angles 42 ± 2° and 45 ± 2° with almost equal abundance.     

Growth and modification of thin a-Si:H/a-Ge:H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing

A combination of ArF-Excimer laser assisted techniques has been used for depositing and modifying ultra thin amorphous Si/Ge bi-layer structures. The first step consisted in producing, at low substrate temperatures, thin bi-layer coatings through Laser induced Chemical Vapour Deposition (LCVD) in both, large areas as well as in small regions of Si(1 0 0) wafers. In the second step, these bi-layer structures have been modified through Pulsed Laser Induced Epitaxy (PLIE) for obtaining heteroepitaxial SiGe alloys with a thin buried Ge rich layer, while keeping a shallow upper Si rich surface with good crystalline quality. Threshold for epitaxial alloy formation has been determined by Raman spectroscopy and estimated to be above 200 mJ/cm². Optical profilometry has been used for evaluating the thickness of the structures and the lateral dimensions of patterned features. SEM, TOF-SIMS and XPS have been used to corroborate the results. For testing IC compatibility, some samples have been overgrown with epitaxial Si and etched through conventional IC processing techniques, revealing that the laser processed layers are suitable to be used as sacrificial layers for producing Micro-Electro-Mechanical Systems (MEMSs) or Silicon-on-Nothing (SON) devices.     

Pt-induced structures on Si(1 1 0) studied by STM

The structures induced by platinum (Pt) adsorption on Si(1 1 0) surface have been studied by scanning tunneling microscopy (STM) for coverage up to 2 monolayers (ML). Three surface phases have been found to form: “5×4”, “13×2” and “6×5” for Pt coverages 0.3, 0.5 and 1 ML respectively. All structures are formed by one-dimensional rows aligned along the direction. At the coverage >1 ML islands of, probably, Pt silicide start to form in form of 1D nanowires.