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931.
Edward Sun 《Journal of luminescence》2010,130(8):1485-1488
The characteristics of temperature-dependent photoluminescence (PL) from Si nanocrystals and effects of arsenic-doping (As-doping) were investigated. The Si nanocrystals on a p-type Si substrate were prepared by low pressure chemical vapor deposition and post-deposition thermal oxidation. The As-doping process was carried out using the gas-phase-doping technique. Temperature-dependent PL from Si nanocrystals exhibited considerable differences between samples with/without As-doping. Phase transition between electron-hole liquid and free exciton was observed in the undoped Si nanocrystals, leading to the increase in PL intensity with temperature less than 50 K. Electron emission from As-doped Si nanocrystals to the p-Si substrate was responsible for the significant increase in PL intensity with temperature greater than 50 K. Characteristics of light emission from Si nanocrystals will facilitate the development of silicon-based nanoscaled light-emitting devices. 相似文献
932.
F. Moreno R. Vilaplana O. Muoz A. Molina D. Guirado 《Journal of Quantitative Spectroscopy & Radiative Transfer》2006,100(1-3):277
We have compared simulated and measured scattering matrices of a size distribution of olivine particles at wavelengths of 633 and 442 nm. The computations were carried out for size distributions of irregularly-shaped compact particles with different average projected areas using the discrete-dipole approximation (DDA). The results of the comparison show that the model of irregularly-shaped particles mimic the observations far better than the results given by spheres, spheroids or rectangular prisms having a wide range in aspect ratios. The computed scattering matrices for size distributions of irregularly-shaped particles do not depend very strongly on the precise particle shape assumed, providing a method to infer certain physical properties of an ensemble of natural dust particles, such as the refractive index, when some information on the sample, as the size distribution, is known a priori. 相似文献
933.
J.M. Morbec 《Surface science》2006,600(5):1107-1112
In this work we have performed an ab initio total energy investigation of the Ge adsorption process on the Si-terminated SiC(0 0 0 1)- and (3 × 3) surfaces. We find that Ge adatoms lying on the topmost sites of the and (3 × 3) surfaces represent the energetically more stable configurations at the initial stage of the Ge adsorption on the SiC(0 0 0 1) surface. The Si → Ge substitutional adsorption processes have been examined as a function of the Si and Ge chemical potentials. Increasing the Ge coverage, we verify that the formation of Ge wetting layer on the surface, and Ge nanocluster on the (3 × 3) surface are the energetically more stable configurations, in accordance with recent experimental findings. 相似文献
934.
K. Lai W. Pan D.C. Tsui S. Lyon M. Mühlberger F. Schffler 《Physica E: Low-dimensional Systems and Nanostructures》2006,34(1-2):176
Tilted field magnetotransport study was performed in a two-valley strained Si quantum well and hysteretic diagonal resistance spikes were observed near the coincidence angles. The spike around filling factor ν=3 develops into a giant feature when it moves to the high-field edge of the quantum Hall (QH) state and quenches for higher tilt angles. When the spike is most prominent, its peak resistance is temperature independent from T20 mK up to 0.3 K, which is different from the critical behavior previously reported near the Curie temperature of the QH ferromagnet in AlAs quantum wells. Our data suggest a strong interplay between spins and valleys near the coincidence. 相似文献
935.
Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si 1-x Ge x /relaxd Si 1-y Ge y (s-Si/s-SiGe/Si 1-y Ge y) metal-oxide-semiconductor field-effect transistor (PMOSFET),an-alytical expressions of the threshold voltages for buried channel and surface channel are presented.And the maximum allowed thickness of s-Si is given,which can ensure that the strong inversion appears earlier in the buried channel (compressive strained SiGe) than in the surface channel (tensile strained Si),because the hole mobility in the buried channel is higher than that in the surface channel.Thus they offer a good accuracy as compared with the results of device simulator ISE.With this model,the variations of threshold voltage and maximum allowed thickness of s-Si with design parameters can be predicted,such as Ge fraction,layer thickness,and doping concentration.This model can serve as a useful tool for p-channel s-Si/s-SiGe/Si 1-y Ge y metal-oxide-semiconductor field-effect transistor (MOSFET) designs. 相似文献
936.
Prof. Dr. Qingyang Fan Rui Niu Prof. Dr. Wenzhu Zhang Dr. Wei Zhang Prof. Dr. Yingchun Ding Prof. Dr. Sining Yun 《Chemphyschem》2019,20(1):128-133
Utilizing first principle calculations, a novel Si64 silicon allotrope in the I41/amd space group with tetragonal symmetry (denoted as t-Si64 below) is proposed in this work. In addition, also its structural, anisotropic mechanical, and electronic properties along with its minimum thermal conductivity κmin were predicted. The mechanical and thermodynamic stability of t-Si64 were evaluated by means of elastic constants and phonon spectra. The electronic band structure indicates that t-Si64 is an indirect band gap semiconductor with a band gap: 0.67 eV (primitive cell) compared to a direct band gap of 0.70 eV with respect to a conventional cell. The minimum thermal conductivity of t-Si64 (0.74 W cm−1 K−1) is much smaller than that of diamond silicon (1.13 W cm−1 K−1). Therefore, Si−Ge alloys in the I41/amd space group are potential thermoelectric materials. 相似文献
937.
基于密度泛函理论,系统研究了由两个La@Si_(16)组装而成的高度稳定的管状二聚体La_2@Si_(32)团簇.电子结构分析显示,内嵌La原子诱导的类sp~2杂化对于提高管状Si_(32)的稳定性至关重要.Mülliken布局分析显示,La_2@Si_(32)的总磁矩为2 μ_B,主要来源于两个La原子和第三、第六层的八个Si原子;电荷是由Si原子转移到了La原子上.此外,通过连接一系列La_2@Si_(32)单体而获得了一类组装的硅纳米线La@SiNW,研究结果显示La@SiNW具有金属导电特性,其总磁矩为2 μ_B.上述特征暗示具有磁性的La_2@Si_(32)和La@SiNW可能在自旋电子器件和高密度磁记录材料方面具有潜在的应用前景. 相似文献
938.
939.
采用基于密度泛函理论的第一性原理方法,在局域密度近似(LDA)下研究了B掺杂Si/SiO_2界面及其在压强作用下的电子结构和光学性质.能带的计算结果表明:掺杂前后Si/SiO_2界面均属于直隙半导体材料,但掺B后界面带隙由0. 74 eV减小为0. 57 eV,说明掺B使材料的金属性增强;对B掺杂Si/SiO_2界面施加正压强,发现随着压强不断增大,Si/SiO_2界面的带隙呈现了逐渐减小的趋势,并且由直隙逐渐转变为间隙.光学性质的计算结果表明:掺B对Si/SiO_2界面在低能区(即红外区)的介电函数虚部、吸收系数、折射率以及反射率等光学参数有显著影响,且在红外区出现新的吸收峰;对B掺杂Si/SiO_2界面施加正压强,随着压强增大,红外区的吸收峰逐渐消失,而在紫外区出现了吸收峰.上述结果表明,对Si/SiO_2界面掺B及施加正压强均可调控Si/SiO_2界面的电子结构与光学性质.本文的研究为基于Si/SiO_2界面的光电器件研究与设计提供一定的理论参考. 相似文献
940.
Investigations on AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes With Si‐Doped Quantum Barriers of Different Doping Concentrations 下载免费PDF全文
Kangkai Tian Qian Chen Chunshuang Chu Mengqian Fang Luping Li Yonghui Zhang Wengang Bi Changqing Chen Zi‐Hui Zhang Jiangnan Dai 《固体物理学:研究快报》2018,12(1)
In this work, we investigate the impact of Si doped AlGaN quantum barriers on the optical powers for [0001] oriented III‐nitride based deep‐ultraviolet light‐emitting diodes (DUV LEDs). The polarization‐induced electric field in the active region is screened as the result of Si‐doped quantum barriers, which gives rise to the improved spatial overlap between electron and hole wave functions. The polarization screening effect within the quantum wells is further proven by the observation of the blue shift for the wavelength. However, the hole distribution across the active region can be significantly retarded if the Si dosage in the quantum barriers is too high. Therefore, the improved radiative recombination within the active region can be realized provided that the Si dosage in the quantum barriers is moderately adjusted to guarantee both the better hole injection efficiency and the screened polarization effect in the multiple quantum wells. 相似文献