Three New Iron(II) Thiocyanato Coordination Polymers Based on 4,4′‐Bipyridine as Ligand and the Influence of Methanol on Their Structures

Reaction of iron(II) thiocyanate with 4,4‐bipyridine (bipy) in methanol leads to the formation of three new solvates of different composition depending on the reaction conditions: At room temperature two new ligand‐rich 1:2 (1:2 = ratio between metal and N‐donor ligand) polymorphic forms [Fe(NCS)₂(bipy)₂ · 2MeOH]_n ( 1I ) and [Fe(NCS)₂(bipy)(MeOH)₂ · (bipy)]_n ( 1II ) are obtained, whereas solvothermal conditions leads to the formation of the new ligand‐deficient 1:1 compound [{Fe(NCS)₂(bipy)(MeOH)}₂]_n ( 2 ). All crystal structures were determined by X‐ray single crystal structure analysis. In the crystal structure of modification 1I the metal atoms are coordinated by four bridging bipy ligands, which connect them into layers. The methanol molecules occupy voids in the structure. Compared to 1I in modification 1II the crystal structure contains of linear Fe–bipy–Fe chains, which are further connected by hydrogen bonds between coordinating MeOH and noncoordinated bipy ligands into layers. The ligand‐deficient 1:1 compound 2 shows a completely different coordination topology with linear Fe–bipy–Fe chains, which are connected by coordinating methanol molecules into double‐chains. In all compounds the thiocyanato anions are terminal N‐bonded to the metal atoms. Investigation of the thermal behavior of compound 1I shows a two‐step decomposition, in which ligand‐deficient intermediates are formed. Magnetic measurements on 1I reveal Curie–Weiss paramagnetism with increasing antiferromagnetic interactions on cooling.     

Novel and highly sensitive mixed-polymeric electrokinetic chromatography system for determination of contaminants and impurities of heparin samples

A mixed‐polymeric electrokinetic chromatography system has been developed for the simultaneous determination of a contaminant like oversulfated condroitin sulfate (OSCS) and impurities expressed as dermatan (Der) in heparin (Hep) samples. The EKC system consisted of 0.5% w/v polymeric β‐CD, 0.4% w/v tetronic^® 1107 and 400 mM tris‐phosphate buffer at pH 3.5. The optimized electrophoretic conditions included the use of an uncoated‐silica capillary of 50 cm of total length and 75 μm id, an applied voltage of ?7 kV, a temperature of 30°C and 200 nm UV‐detection. The highly sensitive method developed showed low values of LOD, 0.07% w/w (0.07 μg/mL) (OSCS) and 0.1% w/w (0.1 μg/mL) (Der), and values of LOQ 0.2% w/w (0.2 μg/mL) (OSCS) and 0.3% w/w (0.3 μg/mL) (Der) with a concentration level of Hep sample as low as 0.1 mg/mL. Additional parameters of validation such as specificity, linearity, accuracy, and robustness were evaluated according to international guidelines. Owing to its simplicity, high sensitivity, and reliability, the proposed method can be an advantageous alternative to the traditional methodologies for the analysis of Hep in raw material and specially in finished products because of the low amounts of Hep sample required.     

Emission properties of femtosecond (fs) laser fabricated microstructures in Polystyrene (PS)

We fabricated microstructures and micro craters in thin films and bulk of PS. To the best of our knowledge, this is the first report of the emission from fs laser modified regions of PS when excited at 337, 400, 458, 488 and 514 nm wavelengths with different emission peaks. We systematically studied the emission in context of formation of optical centers and analyzed the spectra of irradiated PS. Change in the excitation wavelength leads to a shift in the emission peak, whereby, we infer that the emission should be due to a myriad of optical centers. Interestingly these optical centers have a similar excitation spectrum. Diphenylbutadiene (DPBD) is probably the main optical center among other optical centers thus formed in the process of fs laser irradiation of PS.     

Spectroscopic investigations of femtosecond laser irradiated polystyrene and fabrication of microstructures

We report microfabrication of structures in bulk and thin films of polystyrene (PS) using femtosecond (fs) laser pulses. For the first time to our knowledge, we report emission from the fs laser modified regions of bulk and thin films of PS when excited at 458, 488, and 514 nm. Moreover, we report the existence of peroxide type free radicals, for the first time, in fs laser irradiated bulk PS. We observed the suppression of Raman modes in case of structures fabricated at higher energies and the same effect was noticed in central portion of the structures fabricated. No appreciable broadening was observed in the case of structures fabricated at low energies. Possible applications resulting from such structures are discussed briefly.     

The influence of nickel concentration on photoluminescence spectra of ZnSe:Ni samples

Photoluminescence (PL) spectra of ZnSe samples grown by iodine transport method and doped with Ni during the growth process and grown from the melt and doped with Ni by diffusion from a gas phase are investigated in visible and infrared (IR) ranges at 77 and 300 K. It is shown that under sub-band excitation, the PL spectra for the undoped samples of both types are similar and may be attributed to self-activated luminescence with participation of iodine- and V_Zn-based centres. The PL study for ZnSe samples doped with Ni carried out at various Ni concentrations, temperatures, and excitation intensities gives reason to ascribe the observed bands in near-IR and IR ranges to ³T₂(F)→³T₁(F) and ³T₁(P)→³T₁(F) intracentre transitions within the Ni_Zn²⁺(d⁸) ion.     

The effect of Co ion implantation on Ge1−xMnx films

Ge_1−xMn_x (x = 0, 0.013, 0.0226, 0.0339, 0.0565, 0.0678, 0.0904, 0.113) films prepared by magnetron sputtering at 773 K had a Ge cubic structure except for x = 0.1130. Co ion implantation into these films can effectively prevent the formation of a second phase. Both single-doped and co-doped samples were ferromagnetic at room temperature. The d-d exchange interaction between the interstitial Mn (MnT) and the substituted Mn (Mn_Ge) resulted in ferromagnetism in the sputtered films. Since Co ion implantation destroyed the Mn_T-Mn_Ge-Mn_T complex, the saturated magnetization decreased. Hall measurements revealed that the Co ion implanted films were n-type semiconductors, and the anomalous Hall Effect (AHE) suggested the ferromagnetism was carrier-mediated in the implanted films.     

Effect of substrate texture on the growth of hematite nanowires

The effect of texture of iron foil substrate on the growth of hematite nanowires by annealing method has been investigated in detail. Three substrates of different textures were prepared from a [2 0 0] oriented iron foil by some simple processes. The hematite nanowires on these substrates were synthesized by annealing iron foil at 700 °C in moist oxygen. The growth pattern of nanowires on these substrates showed that the growth of hematite nanowires depends strongly on the iron substrate texture and [1 1 0] oriented iron grains are necessary for their growth. The samples were characterized by Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM), X-ray diffraction (XRD), Electron Back Scatter Diffraction (EBSD) and Raman Spectroscopy. We have also tried to explain the various observations on the mechanism of growth. Mainly, the presence of water vapor significantly enhanced the formation of hematite nanowires which resulted in a very dense and aligned growth of nanowires on the substrate areas of favorable texture. Finally, the study proved the substrate texture to be a powerful tool to control growth of nanowires and can be used efficiently for patterning and large scale synthesis of the nanowires.     

Polymers with spatial or topological constraints: Theoretical and computational results

In this review, we provide an organized summary of the theoretical and computational results that are available for polymers subject to spatial or topological constraints. Because of the interdisciplinary character of the topic, we provide an accessible, non-specialist introduction to the main topological concepts, polymer models, and theoretical/computational methods used to investigate dense and entangled polymer systems. The main body of our review deals with (i) the effect that spatial confinement has on the equilibrium topological entanglement of one or more polymer chains and (ii) the metric and entropic properties of polymer chains with fixed topological states. These problems have important technological applications and implications for life sciences. Both aspects, especially the latter, are amply covered. A number of selected open problems are finally highlighted.     

Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

The anisotropic film properties of m-plane GaN deposited by metal organic vapour phase epitaxy (MOVPE) on LiAlO₂ substrates are investigated. To study the development of layer properties during epitaxy, the total film thickness is varied between 0.2 and 1.7 μm. A surface roughening is observed caused by the increased size of hillock-like features. Additionally, small steps which are perfectly aligned in (1 1 −2 0) planes appear for samples with a thickness of ∼0.5 μm and above. Simultaneously, the X-ray rocking curve (XRC) full width at half maximum (FWHM) values become strongly dependent on incident X-ray beam direction beyond this critical thickness. Anisotropic in-plane compressive strain is initially present and gradually relaxes mainly in the [1 1 −2 0] direction when growing thicker films. Low-temperature photoluminescence (PL) spectra are dominated by the GaN near-band-edge peak and show only weak signal related to basal plane stacking faults (BSF). The measured background electron concentration is reduced from ∼10²⁰ to ∼10¹⁹ cm⁻³ for film thicknesses of 0.2 μm and ∼1 μm while the electron mobilities rise from ∼20 to ∼130 cm²/V s. The mobilities are significantly higher in [0 0 0 1] direction which we explain by the presence of extended planar defects in the prismatic plane. Such defects are assumed to be also the cause for the observed surface steps and anisotropic XRC broadening.     

Strain variation in p-GaN by different spacer layers in the light emitting diodes and their microstructural and emission behaviors

InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) with different spacer layer structures were grown by metalorganic chemical vapor deposition. Fast-Fourier-transformed high-resolution transmission electron microscopy was used to determine the influence of the strain status in the spacer layer on Mg distribution and device performance. A comparison of the (1 1¯ 0 0) planar distance showed that the high-temperature grown InGaN layer in the spacer had a high level of stored strain. This led to the formation of a continuous facet contrast induced by Mg segregation in the p-layer, which was responsible for the deterioration of the electroluminescence performance of the LEDs. These results show that the delicate control of stored strain in nitride films is important for improving the device performance.