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71.
L. Bartosch P. Kopietz 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,28(1):29-36
We consider the effect of Coulomb interactions on the average density of states (DOS) of disordered low-dimensional metals
for temperatures T and frequencies ω smaller than the inverse elastic life-time 1/τ. Using the fact that long-range Coulomb interactions in two dimensions (2d) generate ln2-singularities in the DOS ν(ω) but only ln-singularities in the conductivity σ(ω), we can re-sum the most singular contributions
to the average DOS via a simple gauge-transformation. If σ(ω) > 0, then a metallic Coulomb gapν(ω) ∝ |ω|/e
4 appears in the DOS at T = 0 for frequencies below a certain crossover frequency Ω
2 which depends on the value of the DC conductivity σ(0). Here, - e is the charge of the electron. Naively adopting the same procedure to calculate the DOS in quasi 1d metals, we find ν(ω) ∝ (|ω|/Ω
1)1/2exp(- Ω
1/|ω|) at T = 0, where Ω
1 is some interaction-dependent frequency scale. However, we argue that in quasi 1d the above gauge-transformation method is on less firm grounds than in 2d. We also discuss the behavior of the DOS at finite temperatures and give numerical results for the expected tunneling conductance
that can be compared with experiments.
Received 28 August 2001 / Received in final form 28 January 2002 Published online 9 July 2002 相似文献
72.
S Uma Sankar 《Pramana》2006,67(4):655-663
In this talk I review the physics possible at India-based Neutrino Observatory (INO). I discuss the improvement in the precision
of currently known quantities and the possibility measuring the presently unknown quantities. 相似文献
73.
We give a new independent self-dual 3-basis for the trivial variety with two binary operations.
Received October 24, 2006; accepted in final form January 25, 2007. 相似文献
74.
采用模匹配方法,研究了非均匀磁场下开放的四端量子波导中的电子输运性质. 结果表明,从一端入射的电子可以透射到两个与之垂直的输出端和一个与之平行的输出端. 在没有外加磁场的情况下,两个垂直输出端的输运概率是相同的,但垂直端与水平端的输运概率不同;在外加磁场下,由于磁边缘态效应,两个垂直输出端的输运概率也有着相当大的差别. 通过施加不同的磁场,我们能获得丰富的电子输运结构,如台阶,宽谷,尖峰等;通过调节磁场的大小和比例以及结构参数可控制该量子结构在各输出端的输运概率.
关键词:
电子输运
介观体系
磁效应 相似文献
75.
A. M. Berezhkovskii Yu. A. Makhnovskii R. A. Suris 《Journal of statistical physics》1991,65(5-6):1025-1041
We review a novel approach to treating many-body effects in diffusion-limited kinetics. The derivation of the general expression for the survival probability of a Brownian particle in the presence of randomly distributed traps is given. The reduction of this expression to both the Smoluchowski solultion and the wellknown asymptotic behavior is demonstrated. It is shown that the Smoluchowski solution gives a lower bound for the particle survival probability. The correction to the Smoluchowski solution which takes into account the particle death slowdown in the initial process stage is described. The steady-state rate-constant concentration dependence and the reflection of many-body effects in it are discussed in detail. 相似文献
76.
A survey of the contributions of Aldo Cossu in finite geometry is given.
Dedicated to the memory of Professor Aldo Cossu 相似文献
77.
78.
M. Esmaeelpour 《Applied Surface Science》2006,252(18):6353-6359
This research investigates the effect of ion implantation dosage level and further thermal treatment on the physical characteristics of chromium coatings on Si(1 1 1) substrates. Chromium films had been exposed to nitrogen ion fluencies of 1 × 1017, 3 × 1017, 6 × 1017 and 10 × 1017 N+ cm−2 with a 15 keV energy level. Obtained samples had been heat treated at 450 °C at a pressure of 2 × 10−2 Torr in an argon atmosphere for 30 h. Atomic force microscopy (AFM) images showed significant increase in surface roughness as a result of nitrogen ion fluence increase. Secondary ion mass spectroscopy (SIMS) studies revealed a clear increased accumulation of Cr2N phase near the surface as a result of higher N+ fluence. XRD patterns showed preferred growth of [0 0 2] and [1 1 1] planes of Cr2N phase as a result of higher ion implantation fluence. These results had been explained based on the nucleation-growth of Cr2N phase and nitrogen atoms diffusion history during the thermal treatment process. 相似文献
79.
The spectral structure of two parameter unbounded operator pencils of waveguide type is studied. Theorems on discreteness
of the spectrum for a fixed parameter are proved. Variational principles for real eigenvalues in some parts of the root zones
are established. In the case of n = 1 (quadratic pencils) domains containing the spectrum are described (see Fig. 1–3). Conditions in the definition of the
pencils of waveguide type arise naturally from physical problems and each of them has a physical meaning. In particular a
connection between the energetic stability condition and a perturbation problem for the coefficients is given. 相似文献
80.
Nobuaki Kanamaru 《Journal of luminescence》2002,96(1):5-35
Time-resolved fluorescence spectra of a title molecule (with benzene and aliphatic amine parts) in various media, after excitation by several lasers were observed to complement the previous work by conventional spectroscopy [N. Kanamaru, J. Tanaka, J. Phys. Chem. 95 (1991) 6441]. Though complex with many new features, the results were roughly consistent with the previous ones. The significant conclusions are as follows: (1) The emission to be ascribed to the amine (N) part, with more than one component (of nN and aN types) is observed not only for the acetonitrile solution (as previously reported) but also for all the other media. (2) Contrary to the case of a nonpolar hexane solution, both of N fluorescences in the other media reveal unusually long-lived decay components. This can be interpreted by assuming the so-called charge-transfer-to-solvent (CTTS) state that is nonfluorescent and lies just below the fluorescent state. (3) This observation in the protic media can also be taken as another evidence of the peculiar hydrogen bonding between this amine and the protic solvent molecules [N. Kanamaru, J. Tanaka, J. Phys. Chem. 95 (1991) 6441]. (4) Thus, the unexpectedly large quantum yields of N fluorescences in the polar media are now interpreted as arising due to the slow S1N→(CTTS)→S0 internal conversions. 相似文献