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81.
利用卢瑟福背散射/沟道技术对射频等离子体辅助分子束外延法生长在蓝宝石衬底上的ZnO/Zn0.9Mg0.1O/ZnO异质结进行了组分分析,并得到了异质结弹性应变随深度的变化,应变由界面向表面逐渐释放,并由负变正,且在ZnO与Zn0.9Mg0.1O界面处轻微增大.负的应变是由于ZnO与衬底的晶格失配和热失配,而逐渐变为正值是Zn0.9Mg0.1O与ZnO的晶格常数差异及弹性应变的
关键词:
异质结
卢瑟福背散射/沟道
弹性应变
ZnMgO 相似文献
82.
M.J. Martín M.L. Calzada J. Mendiola M.F. Da Silva J.C. Soares 《Journal of Sol-Gel Science and Technology》1998,13(1-3):843-847
A depth profile analysis of modified lead titanate thin films was performed by means of Rutherford Backscattering Spectroscopy (RBS). These films were deposited from sol-gel synthesized solutions onto platinized silicon substrates and crystallized by thermal treatments at temperatures of about 650°C. The chemistry of the solution and the thermal treatment for crystallization affect the heterostructure of the resulting films. Losses of lead and formation of substrate-film interfaces are produced during the crystallization of the films. These film characteristics determine their ferroelectric response. 相似文献
83.
Krecar D Rosner M Draxler M Bauer P Hutter H 《Analytical and bioanalytical chemistry》2006,384(2):525-530
The germanium concentration and the position and thickness of the quantum well in molecular beam epitaxy (MBE)-grown SiGe
were quantitatively analyzed via low-energy Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS). In
these samples, the concentrations of Si and Ge were assumed to be constant, except for the quantum well, where the germanium
concentration was lower. The thickness of the analyzed quantum well was about 12 nm and it was situated at a depth of about
60 nm below the surface. A dip showed up in the RBS spectra due to the lower germanium concentration in the quantum well,
and this was evaluated. Good depth resolution was required in order to obtain quantitative results, and this was obtained
by choosing a primary energy of 500 keV and a tilt angle of 51° with respect to the surface normal. Quantitative information
was deduced from the raw data by comparing it with SIMNRA simulated spectra. The SIMS measurements were performed with oxygen
primary ions. Given the response function of the SIMS instrument (the SIMS depth profile of the germanium delta (δ) layer),
and using the forward convolution (point-to-point convolution) model, it is possible to determine the germanium concentration
and the thickness of the analyzed quantum well from the raw SIMS data. The aim of this work was to compare the results obtained
via RBS and SIMS and to show their potential for use in the semiconductor and microelectronics industry. The detection of
trace elements (here the doping element antimony) that could not be evaluated with RBS in low-energy mode is also demonstrated
using SIMS instead. 相似文献
84.
85.
V.M. Bermudez 《Surface Science Reports》2017,72(4):147-315
A review is presented that covers the experimental and theoretical literature relating to the preparation, electronic structure and chemical and physical properties of the surfaces of the wurtzite form of GaN. The discussion includes the adsorption of various chemical elements and of inorganic, organometallic and organic species. The focus is on work that contributes to a microscopic, atomistic understanding of GaN surfaces and interfaces, and the review concludes with an assessment of possible future directions. 相似文献
86.
Thin films of lanthanum sulphide (La2S3) have been deposited onto glass substrates by spray pyrolysis technique from non-aqueous (methanol) medium. The structural, morphological, optical, dielectric, electric and thermoemf properties were studied. The films were polycrystalline with an irregular shaped particles present over the porous structure within a fibrous network structure. The optical band gap was estimated to be 2.50 eV. The dielectric properties were measured in the range 100 Hz-1 MHz. The electrical resistivity was of the order of 104 to 105 Ω cm. Thermoemf study revealed that the La2S3 films exhibit p-type electrical conductivity. 相似文献
87.
低能(e,2e)反应中的卢瑟福散射效应 总被引:1,自引:0,他引:1
以入射能量为64.6eV、能量均分、共面不对称几何条件下He原子电子碰撞电离过程为例,分析低能(e,2e)反应中的碰撞机制、交换效应和卢瑟福散射效应,揭示了两种新的碰撞机制(DB碰撞和TB碰撞)的物理实质。 相似文献
88.
在蓝宝石衬底上通过金属有机物化学气相沉积(metal-organic chemical vapor deposition,MOCVD)方法外延生长的GaN薄膜具有良好的结晶品质,χmin达到2.00%. 结合卢瑟福背散射/沟道(Rutherford backscattering/channeling,RBS/C)和高分辨X射线衍射(high-resolution X-ray diffraction,HXRD)的实验测量,研究了不同剂量和不同角度Mg+注入GaN所造成的辐射损伤. 实验结果表明,随注入剂量的增大,晶体的辐射损伤也增大,注入剂量在1×1015atom/cm2以下,χmin小于4.78%,1×1016atom/cm2是Mg+注入GaN的剂量阈值,超过这个阈值,结晶品质急剧变差,χmin达到29.5%;随机注入比沟道注入的辐射损伤大,且在一定范围内随注入角度的增大,损伤也增大,在4×1015atom/cm2剂量下偏离〈0001〉沟道0°,4°,6°,9°时的χmin(%)分别为6.28,8.46,10.06,10.85;经过700℃/10min+1050℃/20s两步退火和1000℃/30s高温快速退火后,晶体的辐射损伤都有一定程度的恢复,而且1000℃/30s高温快速退火的效果更好,晶体的辐射损伤可以得到更好的恢复.
关键词:
GaN
卢瑟福被散射/沟道
高分辨X射线衍射
辐射损伤 相似文献
89.
Dr. Michael Eckert 《Physik in unserer Zeit》2013,44(4):168-173
90.
The erbium ions at energy of 400 keV and dose of 5×10 15 ions/cm 2 were implanted into silicon single crystals at room temperature at the angles of 0,45 and 60.The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique.The results show that the measured values were in good agreement with those obtained from the prediction of TRIM’98 (Transport of Ions in Matter) and SRIM2006 (Stopping and Range of Ions in Matter) codes. 相似文献