Theory of the transmission of metal strip gratings on a dielectric substrate application to submillimeter laser coupling

The advantages of supported metal strip gratings with respect to free-standing metal meshes are pointed out for applications as laser output couplers. A new, simple formula for the power transmission through the strip grating on a dielectric plate is derived from a line equivalent-circuit model. This formula is in good agreement with measurements performed on several samples, at different submillimeter wavelengths. An application to output couplers of far-infrared gas discharge lasers allows to improve the reliability of such lasers.x Unité associée au CNRS. U.A. 836.     

The electrical properties of semiconductor/metal,semiconductor/liquid,and semiconductor/conducting polymer contacts

Critical comparisons are drawn between the basic electrical properties of semiconductor/metal, semiconductor/liquid, and semiconductor/conducting polymer junctions. A theoretical model is developed to describe the basic current-voltage properties of semiconductor contacts, with emphasis on the contrasts between ideal and observed behavior. Using the concepts from this model, the characteristics of a variety of semiconductor contacts are evaluated. The discussion focuses on the following semiconductors: Si, GaAs, InP, and II-VI compounds based on the Cd-(chalcogenide) materials.     

螯合树脂研究──ⅩⅩⅦ·巯基胺型螯合树脂的化学改性及其吸附性能

巯基胺型螯合树脂经烷氧基环硫丙烷和二烷基胺基环硫丙烷改性后。合成了一系列新的螫合树脂．这些树脂与原树脂相比，对贵金属离子的吸附性能有一定的改善．特别是用二烷基胺基环硫丙烷改性后的树脂，效果更为明显．还讨论了树脂结构与吸附性能之间的关系．     

金属蛋白研究中几个值得注意的动向

本文叙述了金属蛋白和金属酶研究中近年来几个值得注意的发展动向，即与金属离子相关的疾病（特别是神经退行性疾病）、金属离子在蛋白质的折叠、聚集和装配中的作用，金属伴侣分子、金属蛋白的设计和构建、金属蛋白与DNA相互作用。     

FTIR－PAS技术在卟啉类化合物中的应用（Ⅳ）──稀土乙酰丙酮－meso－四－（α－萘基）四苯并卟啉配合物的红外光谱

研究了ｍｅｓｏ－四－（α－萘基）四苯并卟啉及其Ｄｙ，Ｈｏ，Ｅｒ，ＴＭ，Ｙｂ，Ｌｕ乙酸丙酮形成的配合物在３６００～２２０ｃｍ－１范围内的傅里叶变换红外光声光谱（ＦＴＩＲ－ＰＡＳ），对主要谱带进行了经验归属。结果表明，四－（ａ－萘基）四苯并卟啉与稀土乙酰丙酮配合物中稀土金属离子配位削弱了乙酰丙酮环上Ｍ—Ｏ键的伸缩振动，使此谱带向低波数位移。金属敏感港带出现在～１５１３，～１３２３～１０９０，１０５３和～２５０ｃｍ－１。     

New Plasmon Waveguides Composed of Twin Metal Wedges with a Nano Gap

We have numerically shown the existence of coupled wedge plasmons (CWPs) which propagates along a nano gap of a twin metal wedge. The CWPs are formed by wedge plasmons which can interact with each other. The dispersion relations of the wavenumber, propagation distance, and beam area of CWPs, are described and show that the characteristics of CWPs are similar to those of wedge plasmons and of gap plasmons. We also propose a new plasmon waveguide composed of twin metal wedges with a nano gap.     

Multiple frequency radiofrequency-optical resonance in a four-level model of rubidium atoms with optical pumping

We consider a four-level model for alkali metal atoms with optical pumping by nonresonant light under conditions when magnetic dipole transitions are induced between energy sublevels of the hyperfine structure in the ground state. We present the dependences of the observed signal as a function of the frequency detuning of the applied rf fields relative to the resonant value, calculated in the density matrix formalism. We note the absence of a light shift in the radiofrequency-optical resonance signal, independent of the amplitude of the rf field and the optical and thermal relaxation rates. We show that when using a modulation technique for phase detection of the signal, its maximum discrimination ability is observed under conditions for simultaneous modulation of the pump light intensity and the frequency of the rf field, which in principle does not occur in the classical two-level model for optically oriented atoms in magnetic resonance. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 3, pp. 326–329, May–June, 2006.     

Phase transition and optoelectronic properties of MgH2

In this article, structural and electronic properties of MgH₂ have been studied. The aim behind this study was to find out the ground state crystal structure of MgH₂. For the purpose, density functional theory (DFT)-based full-potential linearized augmented plane wave (FP-LAPW) calculations have been performed in three different space groups: P4₂/mnm (α-MgH₂), Pa3 (β-MgH₂) and Pbcn (γ-MgH₂). It has been found that the ground state structure of MgH₂ is α-MgH₂. The present study shows that α-MgH₂ transforms into γ-MgH₂ at a pressure of 0.41 GPa. After further increase in pressure, γ-MgH₂ transforms into β-MgH₂ at a pressure of 3.67 GPa. The obtained results are in good agreement with previously reported experimental data. In all the studied phases, the behavior of MgH₂ is insulating and its optical conductivity is around 6.0 eV. The α-MgH₂ and γ-MgH₂ are anisotropic materials while β-MgH₂ is isotropic in nature.     

Topological nature of in‐gap bound states in disordered large‐gap monolayer transition metal dichalcogenides

We propose a physical model based on disordered (a hole punched inside a material) monolayer transition metal dichalcogenides (TMDs) to demonstrate a large‐gap quantum valley Hall insulator. We find an emergence of bound states lying inside the bulk gap of the TMDs. They are strongly affected by spin–valley coupling, rest‐ and kinetic‐mass terms and the hole size. In addition, in the whole range of the hole size, at least two in‐gap bound states with opposite angular momentum, circulating around the edge of the hole, exist.Their topological insulator (TI) feature is analyzed by the Chern number, characterized by spacial distribution of their probabilities and confirmed by energy dispersion curves (energy vs. angular momentum). It not only sheds light on overcoming low‐temperature operating limitation of existing narrow‐gap TIs, but also opens an opportunity to realize valley‐ and spin‐qubits. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Multi‐crystalline silicon solar cells with metal‐assisted nano‐texturing using HNO3 as hole injection agent

In this study, metal‐assisted etching (MAE) with nitric acid (HNO₃) as a hole injecting agent has been employed to texture multi‐crystalline silicon wafers. It was previously proven that addition of HNO₃ enabled control of surface texturing so as to form nano‐cone shaped structures rather than nanowires. The process parameters optimized for optically efficient texturing have been applied to multi‐crystalline wafers. Fabrication of p‐type Al:BSF cells have been carried out on textured samples with thermal SiO₂/PECVD‐SiN_x stack passivation and screen printed metallization. Firing process has been optimized in order to obtain the best contact formation. Finally, j_sc enhancement of 0.9 mA/cm² and 0.6% absolute increase in the efficiency have been achieved. This proves that the optimized MAE texture process can be successfully used in multi‐crystalline wafer texturing with standard passivation methods.

J –V curves and SEM images of the nano and iso‐textured samples. j_sc enhancement of 0.9 mA/cm² together with 0.6% absolute efficiency gain was observed on nano‐textured samples.