Mechanism of defect evolution in H+ and He+ implanted InP

The defect evolution in InP with the 75 keV H⁺ and 115 keV He⁺ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He⁺ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H⁺ implanted InP. After annealing, the H⁺ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H₂ molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.     

Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass

The determination of band offsets is crucial in the optimization of Ga₂O₃-based devices, since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous interfaces. In this work, the band offsets of the Ga₂O₃/FTO heterojunction are studied using x-ray photoelectron spectroscopy (XPS) based on Kraut's method, which suggests a staggered type-Ⅱ alignment with a conduction band offset (ΔE_C) of 1.66 eV and a valence band offset (ΔE_V) of -2.41 eV. Furthermore, the electronic properties of the Ga₂O₃/FTO heterostructure are also measured, both in the dark and under ultraviolet (UV) illuminated conditions (254 nm UV light). Overall, this work can provide meaningful guidance for the design and construction of oxide hetero-structured devices based on wide-bandgap semiconducting Ga₂O₃.     

不同衬底和CdCl2退火对磁控溅射CdS薄膜性能的影响

在科宁7059玻璃, FTO, ITO, AZO四种衬底上磁控溅射CdS薄膜, 并在CdCl₂+干燥空气380 ℃退火, 分别研究了不同衬底和退火工艺对CdS薄膜形貌、结构和光学性能的影响. 扫描电子显微镜形貌表明: 不同衬底原位溅射CdS薄膜的形貌不同, 退火后相应CdS薄膜的晶粒度和表面粗糙度明显增大. XRD衍射图谱表明: 不同衬底原位溅射和退火CdS薄膜均为六角相和立方相的混相结构, 退火前后科宁7059玻璃, FTO, AZO衬底上CdS薄膜有 H(002)/C(111) 最强衍射峰, ITO衬底原位溅射CdS薄膜没有明显的最强衍射峰, 退火后出现 H(002)/(111) 最强衍射峰. 紫外-可见分光光度计分析表明: AZO, FTO, ITO, 科宁7059玻璃衬底CdS薄膜的可见光平均透过率依次减小, 退火后相应衬底CdS薄膜的可见光平均透过率增大, 光学吸收系数降低; 退火显著增大了不同衬底CdS薄膜的光学带隙. 分析得出: 上述结果是由于不同衬底类型和退火工艺对CdS多晶薄膜的形貌、结构和带尾态掺杂浓度改变的结果. 关键词： CdS薄膜 磁控溅射 退火再结晶 带尾态     

Imbert–Fedorov shifts of a Gaussian beam reflected from uniaxially anisotropic chiral media

We study the Imbert–Fedorov (IF) shifts of a reflected Gaussian beam from uniaxially anisotropic chiral media (UACM), where the chirality appears only in one direction and the host medium is a uniaxial crystal or an electric plasma. The numerical results are presented for three kinds of UACM, respectively. It is found that the IF shifts are closely related to the propagation properties of the two eigenwaves in the UACM. In general, when either of the eigenwaves is totally reflected, the IF shifts can change abruptly near the critical angle. The cross-polarized reflection coefficient has a greater effect on the spatial IF (SIF) shift than on the angular IF (AIF) shift, and the sign of the AIF shift depends mainly on that of the difference between the co-polarized reflectivity. By designing artificially the electromagnetic parameters of the UACM, we can control the IF shifts and acquire their more abundant properties.     

Quantum anomalous Hall effect and related topological electronic states

Over a long period of exploration, the successful observation of quantized version of anomalous Hall effect (AHE) in thin film of magnetically doped topological insulator (TI) completed a quantum Hall trio—quantum Hall effect (QHE), quantum spin Hall effect (QSHE), and quantum anomalous Hall effect (QAHE). On the theoretical front, it was understood that the intrinsic AHE is related to Berry curvature and U(1) gauge field in momentum space. This understanding established connection between the QAHE and the topological properties of electronic structures characterized by the Chern number. With the time-reversal symmetry (TRS) broken by magnetization, a QAHE system carries dissipationless charge current at edges, similar to the QHE where an external magnetic field is necessary. The QAHE and corresponding Chern insulators are also closely related to other topological electronic states, such as TIs and topological semimetals, which have been extensively studied recently and have been known to exist in various compounds. First-principles electronic structure calculations play important roles not only for the understanding of fundamental physics in this field, but also towards the prediction and realization of realistic compounds. In this article, a theoretical review on the Berry phase mechanism and related topological electronic states in terms of various topological invariants will be given with focus on the QAHE and Chern insulators. We will introduce the Wilson loop method and the band inversion mechanism for the selection and design of topological materials, and discuss the predictive power of first-principles calculations. Finally, remaining issues, challenges and possible applications for future investigations in the field will be addressed.     

Franck–Condon Factors and r‐Centroids for the B–, C–, F–, and G–X Band Systems of YF Molecule

The Franck–Condon factors and r‐centroids, which are very closely related to relative transition probabilities, have been evaluated by a more reliable numerical integration procedure for the B¹π–X¹Σ⁺, C¹Σ⁺–X¹Σ⁺, F¹Σ⁺–X¹Σ⁺, and G¹π–X¹Σ⁺ band systems of the YF molecule, using suitable potentials.     

Color centers in irradiated MgF2

Abstract

Color centers in rutile-structured MgF₂ single crystals irradiated at 20K/360K by reactor neutrons are investigated spectroscopically at LNT. Four different types of the F-F vacancy bond in MgF₂ are possibly identified to the observed absorption bands as due to the F₂ centers; instead of previous assignments, the 300nm band to the F₂(D_2h), the 325nm band to the F₂(C₁), the 355nm band to the F₂(C_2v), and the 400nm band to the F₂(C_2h) centers.     

The effect of the location of stage-I fatigue crack across the persistent slip band on its growth rate – A 3D dislocation dynamics study

Abstract

A 3D dislocation dynamics study to ascertain the probable path of stage-I fatigue crack propagation across the persistent slip band (PSB) in austenitic stainless steel is presented. Cyclic plasticity and the resulting crack tip slip displacement (CTSD) are evaluated for cracks of varying length introduced at PSB-center and at two PSB-matrix interfaces. CTSD attains high value at either of the two interfaces irrespective of the proximity of crack front to the grain boundary. Further, a difference in microcrack propagation rate is also observed among the two interfaces. The present results assert microcrack propagation preferrentially along one of the two PSB-matrix interfaces rather than at the PSB-center. A pre-existing PSB dislocation structure localises the cyclic slip for crack lengths up to approximately half of the grain depth for an applied strain range of 2 × 10^?4.     

Some exact solutions of generalized Zakharov system

In this paper, we seek exact solutions of generalized Zakharov system. We use extended trial equation method to obtain exact solutions of this system. Consequently, we obtain some exact solutions including soliton solutions, rational, Jacobi elliptic and hyperbolic function solutions of this system by using extended trial equation method.