Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

A new on-line methodology is used to characterize the negative bias temperature instability (NBTI) without inherent recovery. Saturation drain voltage shift and mobility shift are extracted by I_D-V_D characterizations, which were measured before stress, and after every certain stress phase, using the proportional differential operator (PDO) method. The new on-line methodology avoids the mobility linearity assumption as compared with the previous on-the-fly method. It is found that both reaction--diffusion and charge-injection processes are important in NBTI effect under either DC or AC stress. A similar activation energy, 0.15 eV, occurred in both DC and AC NBTI processes. Also degradation rate factor is independent of temperature below 90\du\ and sharply increases above it. The frequency dependence of NBTI degradation shows that NBTI degradation is independent of frequencies. The carrier tunnelling and reaction--diffusion mechanisms exist simultaneously in NBTI degradation of sub-micron pMOSFETs, and the carrier tunnelling dominates the earlier NBTI stage and the reaction--diffusion mechanism follows when the generation rate of traps caused by carrier tunnelling reaches its maximum.     

CdS/TiO2/漂珠复合光催化剂制备及其降解高效氯氰菊酯研究

采用溶胶-凝胶-浸渍法制备了Cds/TiO2/漂珠复合光催化剂,通过SEM,XRD对其结构进行了表征.以高效氯氰菊酯(BEC)杀虫剂的光催化降解为模型反应,研究了CdS/TiO2/漂珠的光催化性能,探讨了影响催化剂活性的因素及采用太阳光作光源处理BEC的可行性.结果表明,CdS/TiO2/漂珠投加量为3 000mg·L-1,初始浓度为45 mg·L-1、初始pH为6.5,通气量为200 mL·min-1时间为60 min,BEC降解率分别为92.1%(125W高压汞灯)和79.3%(5 W紫外灯),采用太阳光照射300 min,BEC降解率可达93.4%.BEC的降解反应遵从L-H动力学模型,测得反应速率常数9.80 mg·(L·min)-1,吸附常数4.36×10-3 L·mg-1.     

X射线探测器图像的恢复研究

图像退化是引起X射线探测器图像质量下降的主要原因。图像恢复,可以提高系统的分辨率和对比度灵敏度。通过对射线成像系统图像退化的分析,介绍了反滤波信号恢复方法,并提出了一种近似恢复算法,该算法将反滤波恢复近似为除法运算的恢复。给出了恢复前后的图像及标准差的对比,实验结果表明了该算法的有效性。     

The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Step-stress experiments are performed in this paper to investigate the degradation mechanism of an AlGaN/GaN high electron mobility transistor(HEMT).It is found that the stress current shows a recoverable decrease during each voltage step and there is a critical voltage beyond which the stress current starts to increase sharply in our experiments.We postulate that defects may be randomly induced within the AlGaN barrier by the high electric field during each voltage step.But once the critical voltage is reached,the trap concentration will increase sharply due to the inverse piezoelectric effect.A leakage path may be introduced by excessive defect,and this may result in the permanent degradation of the AlGaN/GaN HEMT.     

Surface and interfacial properties of PVDF/acrylic copolymer blends before and after UV exposure

Morphological and chemical properties of both the surface and interface of poly(vinylidene fluoride)/poly(methyl methacrylate)-co-poly(ethyl acrylate) (PVDF/PMMA-co-PEA) blend films have been investigated before and after the samples were exposed to ultraviolet (UV) irradiation using a xenon arc lamp at 50 °C and 9% relative humidity (RH) for 7 months. Surface and interfacial morphologies were studied by atomic force microscopy (AFM). Chemical composition information was obtained by confocal Raman microscopy, attenuated total reflection-FTIR spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS), and contact angle measurements. Results show an enrichment of the PVDF material at the air surface, while the acrylic copolymer enriches the interface. Blends having greater than 50% mass fraction of PVDF show little change in the surface morphology after UV exposure for 7 months. However, for a lower PVDF content, blends exhibit significant degradation of PMMA-co-PEA copolymer and a much rougher surface after UV exposure. Microstructural changes in the PVDF spherulites are also observed after UV degradation. It is found that the surface and interfacial morphologies are correlated with the chemical properties.     

Cu2O/Ag复合物的合成及SERS原位分析其可见光催化降解活性

A multifunctional Cu₂O/Ag micro-nanocomposite, which has the characteristics of high catalytic activities under the visible light and high surface-enhanced Raman scattering (SERS) activity, was fabricated via a facile method and employed for the in situ SERS monitoring of the photocatalytic degradation reaction of crystal violet. Through the variation of the AgNO₃ concentration, Ag content on the Cu₂O template can be controllably tuned, which has great influence on the SERS effect. The results indicate that Ag nanoparticles form on the Cu₂O nanoframes to obtain the Cu₂O/Ag nanocomposite, which can act as an excellent bifunctional platform for in situ monitoring of photocatalytic degradation of organic pollutions by SERS.     

长寿命导H^＋全固态电致变色器件的研究

研究了导Ｈ＾＋离子全固态电致变色器件性能退化摧在机制，发现有两个因素导致器件性能退化，在器件褪色过程中，存在于ＷＯ３薄膜中的水份将导致ＯＨ＾－在ＷＯ３中积累而在其中产生碱性环境，ＷＯ３溶于碱性环境而生成钨酸盐，在较高电压作用下Ｈ２Ｏ电解释放出气体Ｈ２和Ｏ２而使膜层剥落，通过改进器件结构和改善制备工艺条件，获得了光学密度高达０．５，着色／漂白（Ｃｏｌｏｒ／Ｂｌｅａｃｈ）循环次数高达１０＾６以上的性能     

Origin of cathodic degradation and new phase formation at the La0.9Sr0.1MnO3/YSZ interface

New phase formation at the La_0.9Sr_0.1MnO₃/YSZ interface and its effects on the cathodic performances were studied at 900 °C in air. The resistance caused by the interfacial product layer kept increasing with time to reach up to 40% of the total resistance after 500 h. The interfacial product was identified as La₂Zr₂O₇ by XRD measurement. The electrical conductivity of La₂Zr₂O₇ (2.4 × 10⁻⁵ S cm⁻¹ at 1000 °C), measured by AC impedance and current interruption methods, was 4 to 7 orders of magnitude smaller than those of La_0.9Sr_0.1MnO₃ electrode or YSZ electrolyte. Either the electronic conductivity or the electrochemical O₂ reduction activity of La₂Zr₂O₇ was negligible. Combining these results, a conclusion was made that the cathodic degradation comes mainly from the growth of interfacial product layer and its contribution to the cell resistance increment is ohmic in nature.     

Short‐wavelength infrared defect emission as a probe of degradation processes in 980 nm single‐mode diode lasers

Infrared emission from 980‐nm single‐mode high power diode lasers is recorded and analyzed in the wavelength range from 0.8 to 8.0 μm. A pronounced short‐wavelength infrared (SWIR) emission band with a maximum at 1.3 μm originates from defect states located in the waveguide of the devices. The SWIR intensity is a measure of the non‐equilibrium carrier concentration in the waveguide, allowing for a non‐destructive waveguide mapping in spatially resolved detection schemes. The potential of this approach is demonstrated by measuring spatially resolved profiles of SWIR emission and correlating them with mid‐wavelength infrared (MWIR) thermal emission along the cavity of devices undergoing repeated catastrophic optical damage. The enhancement of SWIR emission in the damaged parts of the cavity is due to a locally enhanced carrier density in the waveguide and allows for an analysis of the spatial damage patterns. The figure shows a side view of a diode laser during catastrophic degradation as recorded by a thermocamera within 5 successive current pulses. The geometry of the device is given in grayscale. The position of the laser chip is indicated by the dotted line. The thermal signatures of the internal degradation of the diode laser are overlaid in color. The bi‐directional spread of the damage along the laser cavity is clearly visible.     

光纤转动引起光纤光谱效率变化与改正

光纤的焦比退化(focal ratio degradation)是光纤光谱效率损失的重要原因之一。光纤在安装和每次定位过程中,光纤的转动和扭曲会引起光纤焦比退化发生变化,从而改变光纤的传输效率,每根光纤由此造成的传输效率变化都会存在差异。而这样的效率差异无法用通常天文观测中使用的晨昏天光平场或者圆顶平场改正。减天光是光纤光谱数据处理中决定光谱质量的重要环节。减天光处理要求对不同光纤的传输效率进行归一化处理,以扣除不同光纤之间传输效率差异导致的天光背景测量的误差。对于与天光背景亮度接近乃至更暗的观测目标而言,光纤传输效率的改正精度决定了减天光的精度。测试了LAMOST望远镜光纤转动对光纤传输效率的影响情况。在检查了光谱中天光发射线强度与光纤传输效率的关系,和验证了光纤效率变化与波长变化相对独立的基础上,提出并且证实了通过测量各光纤中天光发射线强度作为光纤相对效率变化量来改正光纤效率差异的方法是可行的。这种方法已经被应用到LAMOST二维光谱处理当中。