An investigation of the Nd2O3-MoO3 phase system: Thermal decomposition of Nd2Mo4O15 and formation of Nd6Mo10O39

A new neodymium molybdate, Nd₆Mo₁₀O₃₉, has been identified in the Nd₂O₃-MoO₃ phase system. Nd₆Mo₁₀O₃₉ appears to be a metastable phase, which does not form directly from a stoichiometric mixture of Nd₂O₃ and MoO₃ oxides. Instead, it can be obtained by thermal decomposition of Nd₂Mo₄O₁₅. Nd₂Mo₄O₁₅ usually decomposes into Nd₂(MoO₄)₃, and the formation of Nd₆Mo₁₀O₃₉ critically depends on the heating regime used.The structure of Nd₆Mo₁₀O₃₉ has been determined by single crystal X-ray diffraction. It crystallizes in the monoclinic space group C2/c, with unit cell parameters of , , , β=100.767(2)°, at 120 K. Nd atoms are seven and eight coordinate, and pairs of coordination polyhedra share edges and faces, respectively, to form Nd₂O₁₂ and Nd₂O₁₃ groups. All Mo atoms are in tetrahedral coordination environments, with some of the tetrahedra sharing corners to form pyromolybdate groups.     

Moderate pressure synthesis of rare earth nickelate with metal-insulator transition using polymeric precursors

Rare earth nickelates exhibit a reversible metal-semiconductor phase transition that is, in the infrared range, responsible for a thermo-optical contrast. The state of the art synthesis of these compounds usually requires high oxygen pressure to stabilize Ni in the oxidation state 3⁺. In this work, using polymeric precursor associated with moderate pressure annealing, we show that it is possible to obtain fully oxidized rare earth nickelate with metal-insulator transition. Using thermogravimetric analysis, X-ray diffraction and transmission electronic microscopy we compare different samples synthesized at different oxygen pressures and demonstrate their structural similarity. Thermo-optical properties were measured, in the infrared range, using reflectance measurements and confirmed the metal-insulator transition at 60 °C in both samples.TEM observations lead to the conclusion that the structure commonly obtained at 175 bar is perfectly observed in the 20 bar sample without major structural defects. The two samples exhibit a thermochromic behavior and thermo-optical properties of the two samples are equivalent.     

Synthesis and crystal structure of Ln2MGe4O12, Ln=rare-earth element or Y; M=Ca, Mn, Zn

The crystal structure of the promising optical materials Ln₂M²⁺Ge₄O₁₂, where Ln=rare-earth element or Y; M=Ca, Mn, Zn and their solid solutions has been studied in detail. The tendency of rare-earth elements to occupy six- or eight-coordinated sites upon iso- and heterovalent substitution has been studied for the Y_2−xEr_xCaGe₄O₁₂ (x=0-2), Y_2−2xCe_xCa_1+xGe₄O₁₂ (x=0-1), Y₂Ca_1−xMn_xGe₄O₁₂ (x=0-1) and Y_2−xPr_xMnGe₄O₁₂ (x=0-0.5) solid solutions. A complex heterovalent state of Eu and Mn in Eu₂MnGe₄O₁₂ has been found.     

Exchange-coupled nanoscale SmCo/NdFeB hybrid magnets

Nanoscale hybrid magnets containing SmCo₅ and Nd₂Fe₁₄B hard magnetic phases have been produced via a novel “in-one-pot” processing route. The grain size of the processed bulk composite materials is controlled below 20 nm. The refinement of the nanoscale morphology leads to effective inter-phase exchange coupling that results in single-phase like magnetic properties. Energy product of 14 MGOe was obtained in the isotropic nanocomposite magnets at room temperature. At elevated temperatures, the hybrid magnets have greatly improved thermal stability compared to the Nd₂Fe₁₄B single-phase counterpart and have substantially increased magnetization and energy products compared to the single-phase SmCo₅ counterpart.     

The influence of nitrogen vacancies on the magnetic behaviour of rare-earth nitrides

The rare-earth nitrides are ferromagnetic semiconductors with promise for spintronic devices. Their most common dopants are nitrogen vacancies (V_N), with a small enough energy of formation that they exist at of order 1% in epitaxial films. Here we report preliminary investigations of their effect on the magnetic states of two of them in the series, GdN and EuN. In the former we find an enhanced Curie temperature at very high V_N concentration, and the Eu²⁺ ions associated with V_N in the latter show strong exchange with their Eu³⁺ neighbours that might form the basis of a diluted magnetic semiconductor.     

Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN

Because of their possible applications in spintronic and optoelectronic devices, GaN dilute magnetic semiconductors (DMSs) doped by rare-earth (RE) elements have attracted much attention since the high Curie temperature was obtained in RE-doped GaN DMSs and a colossal magnetic moment was observed in the Gd-doped GaN thin film. We have systemically studied the GaN DMSs doped by RE elements (La, Ce–Yb) using the full-potential linearized augmented plane wave method within the framework of density functional theory and adding the considerations of the electronic correlation and the spin-orbital coupling effects. We have studied the electronic structures of DMSs, especially for the contribution from f electrons. The origin of magnetism, magnetic interaction and the possible mechanism of the colossal magnetic moment were explored. We found that, for materials containing f electrons, electronic correlation was usually strong and the spin–orbital coupling was sometimes crucial in determining the magnetic ground state. It was found that GaN doped by La was non-magnetic. GaN doped by Ce, Nd, Pm, Eu, Gd, Tb and Tm are stabilized at antiferromagnetic phase, while GaN doped by other RE elements show strong ferromagnetism which is suitable materials for spintronic devices. Moreover, we have identified that the observed large enhancement of magnetic moment in GaN is mainly caused by Ga vacancies (3.0μB per Ga vacancy), instead of the spin polarization by magnetic ions or originating from N vacancies. Various defects, such as substitutional Mg for Ga, O for N under the RE doping were found to bring a reduction of ferromagnetism. In addition, intermediate bands were observed in some systems of GaN:RE and GaN with intrinsic defects, which possibly opens the potential application of RE-doped semiconductors in the third generation high efficiency photovoltaic devices.     

Growth and properties of Nd:Lu3Ga5O12 laser crystal by floating-zone method

Neodymium (Nd) doped lutetium gallium garnet (Nd:Lu₃Ga₅O₁₂, Nd:LuGG) single crystal was successfully grown by the optical floating-zone method for the first time to our knowledge. Its absorption and luminescence spectra at room temperature were measured. By using the J–O theory, the spectral parameters of Nd:LuGG were calculated, which indicated that Nd:LuGG should possess comparable and even better laser properties than Nd:YAG. The maximum output power of 855 mW at 1062 nm was achieved with slope efficiency of 23.4% under a pump power of 5.2 W, and optical conversion efficiency of 16.4%. All the results show that Nd:LuGG is a potential laser material.     

分子筛稳定的Lewis酸稀土中心在醛自缩合反应中的应用

羟醛缩合是重要的C–C键偶联反应,可以增长碳链,降低O/C比,用于生产很多大宗化学品,在生物质转化和生物油升级中广受关注.本文以丙醛分子自缩合反应作为模型反应,对比研究了稀土分子筛和稀土氧化物在醛自缩合反应中的催化性能,发现稀土分子筛的活性远高于稀土氧化物,其中Y/Beta活性最佳,并且具有良好的循环性能.随后采用程序...