The randomly fluctuating impurity strength initiated excitation in doped quantum dots

We investigate the excitation behavior of a repulsive impurity doped quantum dot under the influence of randomly fluctuating dopant potential. We have considered Gaussian impurity centers doped at different locations. The investigation reveals the interplay between dopant location and dopant’s spatial stretch in modulating the excitation pattern. Maximization in the excitation rate has been observed as a function of fluctuating dopant strength owing to the conflict between opposing influences that promote and hinder excitation.     

Long-time fidelity and chaos for a kicked nonlinear oscillator system

We deal with a system comprising a nonlinear (Kerr-like) oscillator excited by a series of ultra-short external pulses. We introduce the fidelity-based entropic parameter that can be used as an indicator of quantum chaos. Moreover, we propose to use the fidelity-like parameter comprising the information about the mean number of photons in the system. We shall concentrate on the long-time behaviour of the parameters discussed, showing that for deep chaos cases the quantum fidelities behave chaotically in the classical sense despite their strictly quantum character.     

Control of device performances of phosphorescent white organic light-emitting diodes by managing charge transport properties of host materials

Interlayer-free phosphorescent white organic light-emitting diodes (PHWOLEDs) with a mixed-host emitting structure in red emitting layer were developed and device performances were investigated according to the host composition in the red emitting layer. Device performances could be effectively managed by a simple change of host materials in the red emitting layer. A high quantum efficiency was obtained in PHWOLEDs with electron transport-type host in the red emitting layer and red emission was strong in PHWOLEDs with mixed-host in the red emitting layer. In addition, stable color performances were obtained in electron transport-type host rich devices.     

Effect of substrate temperature on structural, optical and electrical properties of pulsed laser ablated nanostructured indium oxide films

Nanocrystalline indium oxide (INO) films are deposited in a back ground oxygen pressure at 0.02 mbar on quartz substrates at different substrate temperatures (T_s) ranging from 300 to 573 K using pulsed laser deposition technique. The films are characterized using GIXRD, XPS, AFM and UV-visible spectroscopy to study the effect of substrate temperature on the structural and optical properties of films. The XRD patterns suggest that the films deposited at room temperature are amorphous in nature and the crystalline nature of the films increases with increase in substrate temperature. Films prepared at T_s ≥ 473 K are polycrystalline in nature (cubic phase). Crystalline grain size calculation based on Debye Scherrer formula indicates that the particle size enhances with the increase in substrate temperature. Lattice constant of the films are calculated from the XRD data. XPS studies suggest that all the INO films consist of both crystalline and amorphous phases. XPS results show an increase in oxygen content with increase in substrate temperature and reveals that the films deposited at higher substrate temperatures exhibit better stoichiometry. The thickness measurements using interferometric techniques show that the film thickness decreases with increase in substrate temperature. Analysis of the optical transmittance data of the films shows a blue shift in the values of optical band gap energy for the films compared to that of the bulk material owing to the quantum confinement effect due to the presence of quantum dots in the films. Refractive index and porosity of the films are also investigated. Room temperature DC electrical measurements shows that the INO films investigated are having relatively high electrical resistivity in the range of 0.80-1.90 Ωm. Low temperature electrical conductivity measurements in the temperature range of 50-300 K for the film deposited at 300 K give a linear Arrhenius plot suggesting thermally activated conduction. Surface morphology studies of the films using AFM reveal the formation of nanostructured indium oxide thin films.     

Hamiltonian map approach to 1D Anderson model

A one-dimensional diagonal tight binding electronic system is analyzed with the Hamiltonian map approach to study analytically the inverse localization length of an infinite sample. Both the uncorrelated and the dichotomic correlated random potential sequences are considered in the evaluations of the inverse localization length. Analytical expressions for the invariant measure or the angle density distribution are the main motivation of this work in order to derive analytical results. The well-known uncorrelated weak disorder result of the inverse localization length is derived with a clear procedure. In addition, an analytical expression for high disorder is obtained near the band edge. It is found that the inverse localization length goes to 1 in this limit. Following the procedure used in the uncorrelated situation, an analytical expression for the inverse localization length is also obtained for the dichotomic correlated sequence in the small disorder situation.     

Evolution processes of coupled thermal qubits

We investigate the quantum speed limit time (QSLT) of quantum evolution before thermal equilibrium of two coupled qubits each of which is coupled to a separate thermal bath at the same temperature within the Born-Markov approximation. The evolution process in one particular initial state can change between speed-up and speed-down two times before reaching equilibrium. We call this double cusp behaviour. This behaviour is an anomalous phenomenon in evolution processes in the weak-coupling Markovian regime. We study QSLT corresponding to all pure initial energy eigenstates and categorise them. In addition, we also display the conditions for double cusp behaviour in terms of temperature, qubit interaction and frequency.     

Passive synthesis rules of coupled-cavity quantum cascade lasers

A new approach to passive electromagnetic modelling of coupled–cavity quantum cascade lasers is presented in this paper. One of challenges in the rigorous analysis of such eigenvalue problem is its large size as compared to wavelength and a high quality factor, which prompts for substantial computational efforts. For those reasons, it is proposed in this paper to consider such a coupled-cavity Fabry-Perot resonant structure with partially transparent mirrors as a two-port network, which can be considered as a deterministic problem. Thanks to such a novel approach, passive analysis of an electrically long laser can be split into a cascade of relatively short sections having low quality factor, thus, substantially speeding up rigorous electromagnetic analysis of the whole quantum cascade laser. The proposed method allows to determine unequivocally resonant frequencies of the structure and the corresponding spectrum of a threshold gain. Eventually, the proposed method is used to elaborate basic synthesis rules of coupled–cavity quantum cascade lasers.     

Electron and hole states in a quantum ring grown by droplet epitaxy: Influence of the layer inside the ring opening

The electronic structure of the conduction and valence bands of a quantum ring containing a layer inside the ring opening is modeled. This structure (nanocup) consists of a GaAs nanodisk (the cup’s bottom) and a GaAs nanoring (the cup’s rim) which encircles the disk. The whole system is embedded in an (Al,Ga)As matrix, and its shape resembles realistic ring structures grown by the droplet epitaxy technique. The conduction-band states in the structure are modeled by the single-band effective-mass theory, while the 4-band Luttinger–Kohn model is adopted to compute the valence-band states. We analyze how the electronic structure of the nanocup evolves from the one of a quantum ring when the size of either the nanodisk or the nanoring is changed. For that purpose, (1) the width of the ring, (2) the disk radius, and (3) the disk height are separately varied. For dimensions typical for experimentally realized structures, we find that the electron wavefunctions are mainly localized inside the ring, even when the thickness of the inner layer is 90% of the ring thickness. These calculations indicate that topological phenomena, like the excitonic Aharonov–Bohm effect, are negligibly affected by the presence of the layer inside the ring.     

A Volume Inequality for Quantum Fisher Information and the Uncertainty Principle

Let A ₁,…,A _N be complex self-adjoint matrices and let ρ be a density matrix. The Robertson uncertainty principle

Hopf-algebraic renormalization of QED in the linear covariant gauge

In the context of massless quantum electrodynamics (QED) with a linear covariant gauge fixing, the connection between the counterterm and the Hopf-algebraic approach to renormalization is examined. The coproduct formula of Green’s functions contains two invariant charges, which give rise to different renormalization group functions. All formulas are tested by explicit computations to third loop order. The possibility of a finite electron self-energy by fixing a generalized linear covariant gauge is discussed. An analysis of subdivergences leads to the conclusion that such a gauge only exists in quenched QED.