Interfacial reaction kinetics

We study irreversible A-B reaction kinetics at a fixed interface separating two immiscible bulk phases, A and B. Coupled equations are derived for the hierarchy of many-body correlation functions. Postulating physically motivated bounds, closed equations result without the need for ad hoc decoupling approximations. We consider general dynamical exponent z, where is the rms diffusion distance after time t. At short times the number of reactions per unit area, , is 2nd order in the far-field reactant densities . For spatial dimensions dabove a critical value , simple mean field (MF) kinetics pertain, where Q_b is the local reactivity. For low dimensions , this MF regime is followed by 2nd order diffusion controlled (DC) kinetics, , provided . Logarithmic corrections arise in marginal cases. At long times, a cross-over to 1st order DC kinetics occurs: . A density depletion hole grows on the more dilute A side. In the symmetric case (), when the long time decay of the interfacial reactant density, , is determined by fluctuations in the initial reactant distribution, giving . Correspondingly, A-rich and B-rich regions develop at the interface analogously to the segregation effects established by other authors for the bulk reaction . For fluctuations are unimportant: local mean field theory applies at the interface (joint density distribution approximating the product of A and B densities) and . We apply our results to simple molecules (Fickian diffusion, z=2) and to several models of short-time polymer diffusion (z>2). Received 8 June 1998 and Received in final form 10 September 1999     

光折变聚合物材料的研究进展

本综述了光折变聚合物材料的发展历史和现状。概括出了这种新型光折变材料的发展思路,并汇总了各种类型材料的光折变特性参数。     

Si/Ge/Si异质横向SPiN二极管固态等离子体解析模型

采用横向表面PiN(SPiN)二极管构造的硅基可重构天线具有众多优于传统天线的独特优势, 是实现天线小型化和提升雷达与微波通信系统性能的有效技术途径. 本文提出一种Si/Ge/Si异质横向SPiN二极管, 并基于双极扩散模型与Fletcher型边界条件, 在大注入条件下建立了二极管结电压、电流密度与本征区固态等离子体浓度分布解析模型, 并数值模拟分析了本征区长度、P⁺与N⁺区掺杂浓度、外加电压对所建模型的影响. 结果表明, 固态等离子体浓度随本征区长度的增加下降, 随外加电压的增加而指数上升, 随P⁺与N⁺区掺杂浓度的提高而上升, 电流密度随外加电压的增加而指数上升. 同等条件下, 异质SPiN二极管的固态等离子体浓度相比同质二极管提高近7倍以上. 本文所建模型为硅基可重构天线的设计与应用提供有效的参考.     

“聚龙一号”装置上磁驱动铝飞片实验的数值模拟

采用二维磁驱动数值模拟程序MDSC2,对大电流脉冲装置聚龙一号上的151发次磁驱动370 m厚铝飞片实验、164发次磁驱动330 m厚铝飞片实验进行了数值模拟和分析。数值模拟表明：370 m厚铝飞片和330 m厚铝飞片的磁驱动过程中, VISAR测量的速度不是飞片自由面的速度,而是飞片中邻近自由面最近的固体反射面的速度。这是由于磁驱动飞片发射过程中,飞片自由面部分被烧蚀,密度低于固体密度状态,而飞片自由面和加载面中间的飞片还保持固体密度状态。VISAR测量的激光将穿过自由面的低于固体密度状态的飞片部分,到达飞片自由面最近的固体密度位置再反射回去,获得这一位置的飞片速度。数值模拟的飞片固体反射面速度历史和VISAR测量的速度历史相吻合。     

基于空间模型测量点的照度比值的CIE标准一般天空类型选择

为了计算自然光照度,需要从CIE定义的15种天空类型中正确选择一种对应当前实际天空。首先根据朝向太阳与背向太阳的垂直天空照度的比值将15种天空类型划分为6组,然后根据天空光透过窗口在空间模型两个不同测量点形成的照度的比值对6组天空类型做进一步划分,最终实现对CIE定义的15种天空类型的选择。将天空类型的选择结果与实际天空类型相比较,结果表明,这种天空类型选择方法所得结果可以准确地对应当前实际天空类型。     

面向数据挖掘的静态电源综合故障诊断研究

静态电源是机场桥载设备最重要的组成部件之一,应用非常广泛。然而,其产生的频发故障会造成设备利用率低、修复率时长和经济损失等问题,在基于桥载设备的安监系统上,提出了静态电源综合故障诊断方法,通过数据挖掘软件,建立了静态电源故障诊断预测模型。通过在线数据库测试结果表明得到了综合故障诊断方法在预测静态电源故障上显现的特点,得到了静态电源的未来状态,实现了对静态电源的实时故障进行预测,进而为解决故障提供方向和目标,最终达到降低经济损失最大化的目的。     

Solid phase synthesis of azapeptides using an automatic synthesizer

Peptides containing azaglycine located terminally or within the backbone have been prepared in the solid phase by means of an automatic synthesizer.     

The Threshold and Modes of the End pumped Solid state Laser

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How to measure energy dissipation in dynamic mode atomic force microscopy

When studying a mechanical system like an atomic force microscope (AFM) in dynamic mode it is intuitive and instructive to analyse the forces involved in tip–sample interaction. A different but complementary approach is based on analysing the energy that is dissipated when the tip periodically interacts with the sample surface. This method does not require solving the differential equation of motion for the oscillating cantilever, but is based entirely on the analysis of the energy flow in and out of the dynamic system. Therefore the problem of finding a realistic model to describe the tip–sample interaction in terms of non-linear force–distance dependencies and damping effects is omitted. Instead, it is possible to determine the energy dissipated by the tip–sample interaction directly by measuring such quantities as oscillation amplitude, frequency, phase shift and drive amplitude. The method proved to be important when interpreting phase data obtained in tapping mode, but is also applicable to a variety of scanning probe microscopes operating in different dynamic modes. Additional electronics were designed to allow a direct mapping of local energy dissipation while scanning a sample surface. By applying this technique to the cross-section of a polymer blend a material specific contrast was observed.     

Impedance studies on polyacrylonitrile–CuX2–DMSO (X=Cl, Br, CF3SO3) solid polymer electrolyte

A series of polyacrylonitrile–dimethylsulfoxide–CuX₂ (X=CF₃SO₃⁻, Cl⁻, Br⁻), films (foils) were prepared by means of the solution cast technique. The thickness of the foils was between 0.04 and 0.09 cm and they contained 70–80 wt.% of the solvent. Conductivities of the solid electrolytes were obtained from impedance measurements. The conductivity increases with the increase of the salt content up to 8 wt.%; at higher concentrations (>8 wt.%) the conductivity is more or less stable, and reaches, in the case of Cu(CF₃SO₃)₂ and CuCl₂, the level of ca. 10⁻³ Ω⁻¹ cm⁻¹ at room temperature. The foils based on the CuBr₂ show even higher conductivity, close to 10⁻² Ω⁻¹ cm⁻¹ at room temperature, a value comparable to that characteristic for liquid solutions. The temperature variation of the conductivity for all the systems studied is of the Arrhenius type. The activation energy, determined from linear plots lnσ=f(T⁻¹), is of the order ca. 14 kJ mol⁻¹ for the PAN/CuBr₂/DMSO and of ca. 21 kJ mol⁻¹ for the PAN/CuCl₂/DMSO and the PAN/Cu(CF₃SO₃)₂/DMSO systems.