Short electrospun composite nanofibers: Effects of nanoparticle concentration and surface charge on fiber length

Short composite nanofibers were fabricated by electrospinning polymer/TiO₂ nanoparticle solutions of 13 wt. % cellulose acetate as a polymer under a voltage of 5.5 kV and at a flow rate of 0.1 μL/min, and the nanoparticles could be added in concentrations as high as 50 wt. %. The length of the short composite nanofibers was significantly decreased from 112 to 70 μm by the addition of at least a 5 wt. % concentration of nanoparticles, and it gradually continued to decrease as the nanoparticle concentration was increased. The length of the short composite nanofibers with a low concentration of nanoparticles was affected by the surface charge of the nanoparticles, and negatively charged nanoparticles readily dispersed to the negatively charged polymers in solution, which resulted in an elongation of the fabricated short composite nanofibers.     

基于第一性原理的石墨吸附一氧化碳倾向性研究

利用基于量子力学的第一性原理计算方法,从微观角度研究煤层对一氧化碳气体的吸附机理.根据煤层的基本成分及结构特点,用结构类似的石墨模拟复杂的煤层,建立石墨吸附一氧化碳分子的模型,讨论石墨表面的三种高对称吸附位置,分别是顶位（top位）、桥位（bridge位）、洞位（hollow位）对一氧化碳分子的吸附.结果表明：当一氧化碳分子垂直于石墨表面,且碳原子端靠近碳层时,在石墨（001）表面的桥位（bridge位）有较强的吸附能.     

Long wavelength InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers

We investigated the effect of GaNAs strain-compensating layers (SCLs) on the properties of InAs self-assembled quantum dots (QDs) grown on GaAs (0 0 1) substrates. The GaNAs material can be used as SCL thereby minimizing the net strain, and thus is advantageous for multi-stacking of InAs QDs structures and achieving long wavelength emission. The emission wavelength of InAs QDs can be tuned by changing the nitrogen (N) composition in GaNAs SCLs due to both effects of strain compensation and lowering of potential barrier height. A photoluminescence emission at 77 K was clearly observed for sample with GaN_0.024As_0.976 SCL. Further, we observed an improvement of optical properties of InAs QDs by replacing the more popular GaAs embedding layers with GaNAs SCLs, which is a result of decreasing non-radiative defects owing to minimizing the total net strain.     

Preparation and characterization of activated carbons from impregnation pitch by ZnCl2

Using an impregnation pitch from bituminous coal tar (OP) supplied by Industrias Químicas del Nalon Company as raw material, two phases (isotropic and anisotropic) have been obtained. The latter was used as precursor for the preparation of activated carbons. First, a chemical activation process was carried out with ZnCl₂ as activating agent. The process was conducted at different concentrations and temperatures and by means of impregnation with solid zinc chloride. Optimal values were obtained for samples prepared by using a ZnCl₂:pitch ratio equal to 3:1 (sample AZn3). Next, this sample was thermally treated at two different temperatures, i.e., 700 and 800 °C. A lose of specific surface area, microporosity and mesoporosity was observed with respect to sample AZn3, such a lose being more remarkable as temperature increased. Moreover, impregnation of the anisotropic phase of the original pitch with an aqueous solution of ZnCl₂ followed by thermal treatment resulted in a poorly developed surface area and porous texture, probably due to the presence of Zn complexes, which interfere with the activation process.     

The Chemical Potential

The definition of the fundamental quantity, the chemical potential, is badly confused in the literature: there are at least three distinct definitions in various books and papers. While they all give the same result in the thermodynamic limit, major differences between them can occur for finite systems, in anomalous cases even for finite systems as large as a cm³. We resolve the situation by arguing that the chemical potential defined as the symbol μ conventionally appearing in the grand canonical density operator is the uniquely correct definition valid for all finite systems, the grand canonical ensemble being the only one of the various ensembles usually discussed (microcanonical, canonical, Gibbs, grand canonical) that is appropriate for statistical thermodynamics, whenever the chemical potential is physically relevant. The zero–temperature limit of this μ was derived by Perdew et al. for finite systems involving electrons, generally allowing for electron–electron interactions; we extend this derivation and, for semiconductors, we also consider the zero–T limit taken after the thermodynamic limit. The enormous finite size corrections (in macroscopic samples, e.g. 1 cm³) for one rather common definition of the c.p., found recently by Shegelski within the standard effective mass model of an ideal intrinsic semiconductor, are discussed. Also, two very–small–system examples are given, including a quantum dot.     

Resonantly enhanced off-specular X-ray scattering from polymer/polymer interfaces<Superscript>⋆</Superscript>

We have used measurements of the absolute intensity of diffuse X-ray scattering to extract the interfacial tension of a buried polymer/polymer interface. Diffuse scattering was excited by an X-ray standing wave whose phase was adjusted to have a high intensity at the polymer/polymer interface and simultaneously a node at the polymer/air interface. This method permits the capillary-wave-induced roughness of the interface, and hence the interfacial tension, to be measured independently of the polymer/polymer interdiffusion.     

Molecular dynamics simulations of pure methane and carbon dioxide hydrates: lattice constants and derivative properties

ABSTRACT

We report extensive molecular dynamics simulation results of pure methane and carbon dioxide hydrates at pressure and temperature conditions that are of interest to various practical applications. We focus on the calculation of the lattice constants of the two pure hydrates and their dependence on pressure and temperature. The calculated lattice constants are correlated using second order polynomials which are functions of either temperature or pressure. Finally, the obtained correlations are used in order to calculate two derivative properties, namely the isothermal compressibility and the isobaric thermal expansion coefficient. The current simulation results are also compared against reported experimental measurements and other simulation studies and good agreement is found for the case of isothermal compressibility. On the other hand, for the case of isobaric thermal expansion coefficient good agreement is found only with other simulation studies, while the simulation studies are in disagreement with experiments, particularly at low temperatures.     

Bound states of Dirac fermions in monolayer gapped graphene in the presence of local perturbations

In graphene,conductance electrons behave as massless relativistic particles and obey an analogue of the Dirac equation in two dimensions with a chiral nature.For this reason,the bounding of electrons in graphene in the form of geometries of quantum dots is impossible.In gapless graphene,due to its unique electronic band structure,there is a minimal conductivity at Dirac points,that is,in the limit of zero doping.This creates a problem for using such a highly motivated new material in electronic devices.One of the ways to overcome this problem is the creation of a band gap in the graphene band structure,which is made by inversion symmetry breaking(symmetry of sublattices).We investigate the confined states of the massless Dirac fermions in an impured graphene by the short-range perturbations for "local chemical potential" and "local gap".The calculated energy spectrum exhibits quite different features with and without the perturbations.A characteristic equation for bound states(BSs) has been obtained.It is surprisingly found that the relation between the radial functions of sublattices wave functions,i.e.,f_m~+(r),g_m~+(r),and f_m~-(r),g_m~-(r),can be established by SO(2) group.     

Carrier transport in III–V quantum-dot structures for solar cells or photodetectors

According to the well-established light-to-electricity conversion theory,resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent,which have been observed in quantum dots without a p–n junction at an external bias.Here,we experimentally observed more than 88% of the resonantly excited photo carriers escaping from In As quantum dots embedded in a short-circuited p–n junction to form photocurrent.The phenomenon cannot be explained by thermionic emission,tunneling process,and intermediate-band theories.A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p–n junction.The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors.     

Tribological properties of diamond-like carbon films deposited by pulsed laser arc deposition

A novel method, pulsed laser arc deposition combining the advantages of pulsed laser deposition and cathode vacuum arc techniques, was used to deposit the diamond-like carbon (DLC) nanofilms with different thicknesses. Spectroscopic ellipsometer, Auger electron spectroscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, atomic force microscopy, scanning electron microscopy and multi-functional friction and wear tester were employed to investigate the physical and tribological properties of the deposited films. The results show that the deposited films are amorphous and the sp$^{2}$, sp$^{3}$ and C--O bonds at the top surface of the films are identified. The Raman peak intensity and surface roughness increase with increasing film thickness. Friction coefficients are about 0.1, 0.15, 0.18, when the film thicknesses are in the range of 17--21~nm, 30--57~nm, 67--123~nm, respectively. This is attributed to the united effects of substrate and surface roughness. The wear mechanism of DLC films is mainly abrasive wear when film thickness is in the range of 17--41~nm, while it transforms to abrasive and adhesive wear, when the film thickness lies between 72 and 123~nm.