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81.
Rafa Lewandkw Miosz Grodzicki Piotr Mazur Antoni Ciszewski 《Surface and interface analysis : SIA》2021,53(1):118-124
Al2O3 insulator layers were deposited step by step by the physical vapor deposition (PVD) method onto gallium nitride in the wurtzite form, n‐type and (0001)‐oriented. The substrate surface and the early stages of Al2O3/n‐GaN(0001) interface formation were characterized in situ under ultra‐high vacuum conditions by X‐ray and ultraviolet photoelectron spectroscopy (XPS, UPS). The electron affinity (EA) of the substrate cleaned by annealing was 3.6 eV. Binding energies of the Al 2p (76.0 eV) and the O 1s (532.9 eV) confirmed the creation of the Al2O3 compound in the deposited film for which the EA was 1.6 eV. The Al2O3 film was found to be amorphous with a bandgap of 6.9 eV determined from the O 1s loss feature. As a result, the calculated Al2O3/n‐GaN(0001) valence band offset (VBO) is ?1.3 eV and the corresponding conduction band offset (CBO) 2.2 eV. 相似文献
82.
陈红霞 《原子与分子物理学报》2015,32(6)
本文采用第一性原理密度泛函理论系统的研究了Fe原子单掺杂和双掺杂(ZnTe)12团簇的结构和磁性质。我们考虑了替代掺杂和间隙掺杂。不管是单掺杂还是双掺杂,间隙掺杂团簇都是最稳定结构。团簇磁矩主要来自Fe-3d态的贡献,4s 和4p 态也贡献了一小部分磁矩。由于轨道杂化,相邻的Zn和Te原子上也产生少量自旋。最重要的是,我们指出间隙双掺杂团簇是铁磁耦合,在纳米量子器件有潜在的应用价值。 相似文献
83.
The 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) doped polymer films were prepared with Polypyrrole (PPy) and Polyvinyl alcohol (PVA) polymers by solution-casting. The change in structure and chemical composition of samples was identified by XRD and FTIR respectively. The UV–visible spectroscopy demonstrates the optical characteristics and band gap properties of sample. The homogeneous morphology of sample for higher wt% of PTCDA was examined by atomic force microscopy (AFM). The differential scanning calorimetry (DSC) results demonstrate the decrease in melting temperature (Tm) and degree of crystallinity (χc%) of polymeric organic semiconductor. The mechanical property demonstrates the high tensile strength and improved plasticity nature. Impedance spectroscopy was evaluated to determine the conductivity response of polymeric organic semiconductor. The highest DC conductivity (2.08×10−3 S/m) was obtained for 10 wt% of PTCDA at 140 °C. The decrease in activation energy (Ea) represents the non-Debye process and was evaluated from the slope of ln σdc vs. 103/T plot. 相似文献
84.
A Combined Experimental and Theoretical Study on the Formation of Ag Filaments on β‐Ag2MoO4 Induced by Electron Irradiation 下载免费PDF全文
Juan Andrés Mateus M. Ferrer Lourdes Gracia Armando Beltran Valeria M. Longo Guilherme H. Cruvinel Ricardo L. Tranquilin Elson Longo 《Particle & Particle Systems Characterization》2015,32(6):646-651
A combined experimental and theoretical study is presented to understand the novel observed nucleation and early evolution of Ag filaments on β‐Ag2MoO4 crystals, driven by an accelerated electron beam from an electronic microscope under high vacuum. The growth process, chemical composition, and the element distribution in these filaments are analyzed in depth at the nanoscale level using field‐emission scanning electron microscopy (FE‐SEM) and transmission electron microscopy (TEM) with energy‐dispersive spectroscopy (EDS) characterization. To complement experimental results, chemical stability, structural and electronic aspects have been studied systematically using first‐principles electronic structure theory within a quantum theory of atoms in molecules (QTAIM) framework. The Ag nucleation and formation on β‐Ag2MoO4 are a result of structural and electronic changes of the AgO4 tetrahedral cluster as a constituent building block of β‐Ag2MoO4, consistent with Ag metallic formation. The formation of Ag filament transforms the β‐Ag2MoO4 semiconductor from n‐ to p‐type concomitant with the appearance of Ag defects. 相似文献
85.
利用超快光谱技术系统研究了在丁胺包裹的CdSe量子点敏化的TiO2纳米晶薄膜起始时刻界面间电子转移动力学。与之前的报道不同,该实验结果表明:CdSe量子点经过表面修饰后,两相电子注入机制--热电子和冷电子注入得以被证实,即:电子能分别从CdSe量子点导带中高的振动能级和导带底转移到TiO2的导带。该机制详细描绘了电子在纳米界面间转移的图景。进一步研究发现:热电子注入的电子耦合强度(3.6±0.1 meV)比弛豫后的基态电子注入高两个数量级,基于Marcus理论,伴随着0.083 eV的重组能,冷电子注入的耦合强度值为~50 μeV。 相似文献
86.
The properties of AlxGa1−xN/GaN high electron mobility transistor (HEMT) impacted by pressure are characterized quantitatively. The results indicate that the dislocation density increases as the critical thickness decreases with increasing pressure. The two-dimensional electron gas density was found to be linearly changeable with the pressure. A simulation has been completed to verify the influence of electron mobility. The results show that the misfit dislocation scattering induced by the pressure is a major limiting factor for the properties of HEMT. 相似文献
87.
《Current Applied Physics》2015,15(10):1222-1225
Light-emitting diodes (LEDs) with a Mg-doped p-type Ga1−xInxN (0 ≤ x ≤ 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga1−xInxN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm2 is obtained when inserting a 5 nm-thick p-type Ga0.97In0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs. 相似文献
88.
89.
Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor
《Current Applied Physics》2015,15(10):1130-1133
We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the “n+” source/drain regions and “p+” body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of ∼50.0 V, an average ON-resistance of 48.7 mΩ-mm2 and a peak transconductance of 53.6 μS/μm similar to that of a comparable LDMOS. 相似文献
90.
Mechanistic Study of the Role of Primary Amines in Precursor Conversions to Semiconductor Nanocrystals at Low Temperature 下载免费PDF全文
Dr. Kui Yu Dr. Xiangyang Liu Queena Y. Chen Prof. Huaqing Yang Prof. Mingli Yang Xinqin Wang Prof. Xin Wang Dr. Hong Cao Dr. Dennis M. Whitfield Prof. Changwei Hu Dr. Ye Tao 《Angewandte Chemie (International ed. in English)》2014,53(27):6898-6904
Primary alkyl amines (RNH2) have been empirically used to engineer various colloidal semiconductor nanocrystals (NCs). Here, we present a general mechanism in which the amine acts as a hydrogen/proton donor in the precursor conversion to nanocrystals at low temperature, which was assisted by the presence of a secondary phosphine. Our findings introduce the strategy of using a secondary phosphine together with a primary amine as new routes to prepare high‐quality NCs at low reaction temperatures but with high particle yields and reproducibility and thus, potentially, low production costs. 相似文献