Raman scattering investigations on Co-doped ZnO epitaxial films: Local vibration modes and defect associated ferromagnetism

Raman scattering spectroscopy has been performed on high quality Co-doped ZnO epitaxial films, which were grown on Al₂O₃ (0001) by oxygen-plasma assisted molecular beam epitaxy. Raman measurements revealed two local vibration modes (LVMs) at 723 and 699 cm⁻¹ due to the substitution of Co²⁺ in wurtzite ZnO lattice. The LVM at 723 cm⁻¹ is found to be an elemental sensitive vibration mode for Co substitution. The LVM at 699 cm⁻¹ can be attributed to enrichment of Co²⁺ bound with oxygen vacancy, the cobalt–oxygen vacancy–cobalt complexes, in Zn_1−xCo_xO films associated with ferromagnetism. The intensity of LVM at 699 cm⁻¹, as well as saturated magnetization, enhanced after the vacuum annealing and depressed after oxygen annealing.     

Semiconductor optical fibres: progress and opportunities

This paper reviews recent progress in the nascent field of semiconductor optical fibres, from the fundamentals through to device demonstration. The incorporation of semiconductor materials into both the step‐index and microstructured fibre geometries provides a route to introducing new optoelectronic functionality into existing glass fibre technologies. Herein, the various fabrication methods that have been developed as of to date are described, and their compatibility with the different semiconductor materials and fibre designs discussed. Results will be presented on the optical transmission properties of several fibre types, with particular attention being paid to the observation of nonlinear propagation in silicon core fibres. Finally, some speculation regarding the future prospects and applications of this new class of fibre will be provided.     

Design of an ultrafast all-optical NOR logic gate based on Mach-Zehnder interferometer using quantum-dot SOA

This paper proposes a design for all-optical NOR logic gate, based on Mach-Zehnder interferometer (MZI) using quantum-dot semiconductor optical amplifier (QD-SOA). In this regard, a theoretical model for an ultrafast all-optical signal processor is developed using QD-SOA to achieve high bit rate operation. We have demonstrated the NOR gate operation in two cases of with and without an optical control pulse. Simulations have been carried out at data bit rates 160 Gb/s, 200 Gb/s, and 250 Gb/s for the case that control pulse is not applied, and also at data bit rates 1 Tb/s and 2 Tb/s in presence of control pulse which leads to improvement of gain recovery time and ultrafast NOR logic operation. In addition, quality factors of the output signals in presence and without the control pulse at different bit rates with different bias currents have been investigated for pseudo-random binary sequence (PRBS) of word length 2⁸–1.     

Spaser spectroscopy with subwavelength spatial resolution

We propose a method for high-sensitivity subwavelength spectromicroscopy based on the usage of a spaser (plasmonic nanolaser) in the form of a scanning probe microscope tip. The high spatial resolution is defined by plasmon localization at the tip, as is the case for apertureless scanning near-field optical microscopy. In contrast to the latter method, we suggest using radiationless plasmon pumping with quantum dots instead of irradiation with an external laser beam. Due to absorption at the transition frequencies of neighboring nano-objects (molecules or clusters), dips appear in the plasmon generation spectrum. The highest sensitivity is achieved near the generation threshold.     

Polaron effect dependence of thermopower in organic semiconductors

A unified physical model for thermopower was presented in organic semiconductors, based on the Marcus theory and variable-range hopping theory. According to the proposed model, the characteristic of charge carrier thermoelectric transport in organic semiconductors has been investigated. In particular, polaron effects, energetic disorder, and carrier density dependence of the thermopower have been discussed in detailed. The calculation also shows a good agreement with the experimental data in organic semiconductors.     

高增益双层组合GaAs光电导开关设计与实验研究

设计制备了一种由双层半绝缘GaAs:EL2晶体组成的新型超快光电导功率开关.由于触发状态下双层GaAs晶体之间满足动态分压关系,使该开关在强电场偏置下触发时,双层GaAs晶体既能先后发生高增益过程,又能相互抑制对方进入锁定状态,开关输出为近似方波的双峰脉冲.因此,这种开关的工作方式既具有非线性模式特有的所需触发光能小、上升速度快等优点,又具有线性模式特有的重复工作频率高、使用寿命长等优点.偏压6500V时用脉宽8ns、能量3mJ的1064nm激光触发,输出电脉冲的上升沿为13.2ns,下降沿为54.6ns 关键词： 光电半导体开关 高增益 锁定效应     

Electrical properties of metal-oxide semiconductor nano-particle device

We have studied the electrical transport properties of two types of devices utilizing metal-oxide semiconductor nano-particles, Cu₂O and Fe₂O₃. The metal-oxide nano-particles are embedded in a polyimide matrix through chemical reaction between the metal thin film and polyamic acid as a precursor of polyimide. To test the electron tunneling via nano-particles, Au nano-electrodes are fabricated on a SiO₂/Si substrate with a 30 nm gap by electron-beam lithography. A single electron tunneling behavior was apparent in the devices with Cu₂O nano-particle inserted into the nano-gap electrodes. Also, a memory effect was measured in a floating-gated memory device structure with Fe₂O₃ nano-particles embedded in a polyimide matrix.     

泽贝克/佩尔捷效应演示实验

应用半导体温差发电模块制作了半导体温差发电演示装置,该装置可直观演示泽贝克效应及佩尔捷效应,同时还具有测量泽贝克系数等功能.     

射频溅射法制备Pb_(1-x)Co_xSe薄膜及物性研究

利用复合靶共溅射法制备了半磁性半导体 Ｐｂ１－ ｘ Ｃｏｘ Ｓｅ 薄膜．研究了薄膜的成分结构以及电阻率温度特性和磁化率温度特性间的关系．结果表明：由于 Ｃｏ 离子介入, Ｐｂ１－ ｘ Ｃｏｘ Ｓｅ 发生了由金属特性向半导体特性的转变,在充分低的温度下,并伴有磁相转变．磁相转变温度与磁性离子浓度相关,磁化率的相对变化幅度与磁性离子浓度有关     

UPWIND FINITE VOLUME SCHEMES FOR SEMICONDUCTOR DEVICE

The mathematical model of semiconductor devices is described by the initial boundary value problem of a system of three nonlinear partial differential equations. One equation in elliptic form is for the electrostatic potential; two equations of convection-dominated diffusion type are for the electron and hole concentrations. Finite volume element procedure are put forward for the electrostatic potential, while upwind