Mode beating in spot-size converter lasers

An anomalous modulation in the wavelength spectrum has been observed in lasers with spot-size converters. This intensity modulation is shown to be caused by beating between the fundamental lasing mode and radiation modes in the taper. This results in a periodic modulation in the net gain spectrum, which causes wavelength jumps between adjacent net gain maxima, and a drive current dependent spectral width that is expected to affect system performance. The amplitude of this spectral modulation is reduced significantly by either using an angled rear-facet which reflects the beating radiation modes away from the laser axis, or by using a nonlinear, adiabatic taper.     

Method of Self-Mixing in the Spectroscopy of Quasielastically Scattered Laser Radiation

Interaction of a semiconductor laser with its self-radiation quasielastically scattered in the environment is considered. It is established that at small coefficients of coupling of the laser with the scattering medium the spectral density of the power of an optoelectronic signal in the laser faithfully reproduces the shape of the scattered-radiation spectrum at the Doppler-shift frequencies. This makes it possible to measure the spectrum with a resolution characteristic for optical homodynation by recording the optoelectronic signal.     

基于单端半导体光放大器的可调谐超短光脉冲源理论与实验研究

超短光脉冲源是光时分复用(OTDM)系统中的关键器件.提出了一种基于单端半导体光放大器(SOA)的注入型主动锁模光纤激光器产生超短光脉冲的方案，建立了该方案的理论模型.实验实现了高消光比稳定的重复频率10—40GHz皮秒级光脉冲的输出，输出波长在30nm范围内连续可调. 关键词： 超短光脉冲 单端半导体光放大器 主动锁模     

非晶态硒化镉薄膜瞬态光电特性

本文报道用真空热蒸发法淀积的非晶态硒化镉薄膜作光敏介质制备超快光电导探测器。用对撞脉冲锁模Nd:YAG激光器产生的超短光脉冲序列对探测器的响应时间进行检测,结果表明a-CdSe薄膜对皮秒(10^-12秒)级的超短光脉冲作用具有良好的瞬态响应光电特性,探讨a-CdSe薄膜快速弛豫过程的内在机理。     

Passivation of aluminium–n+ silicon contacts for solar cells by ultrathin Al2O3 and SiO2 dielectric layers

Ultra‐thin thermally grown SiO₂ and atomic‐layer‐deposited (ALD) Al₂O₃ films are trialled as passivating dielectrics for metal–insulator–semiconductor (MIS) type contacts on top of phosphorus diffused regions applicable to high efficiency silicon solar cells. An investigation of the optimum insulator thickness in terms of contact recombination factor J_{0_cont} and contact resistivity ρ_c is undertaken on 85 Ω/□ and 103 Ω/□ diffusions. An optimum ALD Al₂O₃ thickness of ～22 Å produces a J_{0_cont} of ～300 fAcm^–2 whilst maintaining a ρ_c lower than 1 mΩ cm² for the 103 Ω/□ diffusion. This has the potential to improve the open‐circuit voltage by a maximum 15 mV. The thermally grown SiO₂ fails to achieve equivalently low J_{0_cont} values but exhibits greater thermal stability, resulting in slight improvements in ρ_c when annealed for 10 minutes at 300 °C without significant changes in J_{0_cont}. The after‐anneal J_{0_cont} reaches ～600 fAcm^–2 with a ρ_c of ～2.5 mΩ cm² for the 85 Ω/□ diffusion amounting to a maximum gain in open‐circuit voltage of 6 mV. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Anisotropic charge transport in flavonoids as organic semiconductors

A quantum mechanical approach has been used to investigate on the potential for using two naturally occurring flavonoids: quercetin and luteolin as candidates for organic semiconductor. Selection of flavonoids enables to evaluate the effects of hydroxyl group structural features. The relationship between molecular packing and charge transport in flavonoids is presented. The calculated results indicate that quercetin should be an ideal candidate as high-performance p-type organic semiconductor material, while luteolin is predicted as n-type organic semiconductor material. The predicted maximum electron mobility value of quercetin is 0.075 cm² V^?1 s^?1, which appears at the orientation angle near 91°/271° of conducting channel on the reference planes b–c. Theoretical investigation of natural semiconductors is helpful for designing higher performance electronic materials used in biochemical and industrial field to replace expensive and rare organic materials.     

Structural investigation of the zincblende-β tin transition for gasb by in situ X-ray absorption spectroscopy

Abstract

The transition to the β tin structure has been observed by X-ray absorption spectroscopy for GaSb at 7.9 GPa. In the low pressure phase, the bulk modulus has been determined. In the high pressure phase, the results for the Ga-Sb and Ga-Ga distances are in good agreement with previous x-ray diffraction data. The pseudo Debye-Waller factor associated to the Ga-Sb distance is abnormally high, indicating that disorder exists for this bond.     

Ionenstrahlätzen – Verfahren und Ausrüstungen für die Mikrostrukturierung

Ion beam techniques are widely used jur modification as well us analysis of materials in development and production of VLSI circuits and their importance is continuously increased in course of the reduction of structure dimensions. Some possibilities and problems connected with the application of ion beams of low energy in the pattern transfer are- described and the stage of development achieved in the Central Institute of Isotope and Radiation Research is outlined.     

Multiple-Output Fiber-Ring Lasers and Amplifiers in a Hybrid CATV and ADSL Broadcasting Optical Fiber Communication System

In this article we propose two kinds of new fiber ring structure with a semiconductor optical amplifier. The first structure is a one-fiber-ring amplifier with an 8 × 8 fiber coupler and a semiconductor optical amplifier (SOA). The second fiber ring structure is a two-fiber-ring laser including an 8 × 8 fiber coupler, a 2 × 2 E/O modulator, and an SOA. The 14-output spectra of the fiber laser are measured. The gain coefficients of each port of the multiple-output-fiber-ring amplifiers are also measured. We apply these two kinds of fiber ring structures in a hybrid CATV and ADSL broadcasting optical fiber communication system. This application can develop a broadcasting system with large coverage area without using many laser diodes and optical amplifiers. The performance of such a system is also analyzed in this article.