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91.
Christian Erich Zybill Mahmoud Abdel-Hafiez Sami Allam Tharwat El Sherbini 《Progress in Solid State Chemistry》2007,35(2-4):469-480
Ferroelectric thin films form an equilibrium domain structure compatible with their respective crystallographic symmetry. In tetragonal (111) PZT, 90° domains prevail; in (pseudo-tetragonal) (100) SBT both 90° and 180° domains are present. The size of 90° domains has been measured for e.g., PZT as slabs of 15 nm width. Domain size is a result of stress minimization in the film during the paraelectric (PE) → ferroelectric (FE) transition. A precise and regular domain pattern for (111) PZT and (100) SBT films has been investigated in detail by TMSFM. Single domains can be addressed mechanically with the tip of an AFM. Such single domain switching corresponds to a data storage density of 200 Gbit/inch2. Applications of ferroelectric and high- paraelectric materials for e.g., non-volatile data storage replacing DRAM devices or as sensors in infrared cameras are increasingly becoming popular. 相似文献
92.
G. Teowee J. M. Boulton C. D. Baertlein R. K. Wade D. R. Uhlmann 《Journal of Sol-Gel Science and Technology》1994,2(1-3):623-626
A series of monolithic Pt-PZT-Pt capacitors was prepared based on sol-gel derived PZT 53/47 films fired to 700 C. After deposition of top Pt electrodes, the capacitors were subjected to post-metallization annealing (PMA) temperatures of 100 C to 700 C. Dielectric and ferroelectric (FE) characterizations were performed. Increasing the PMA temperature produced lower values of spontaneous and remanent polarizations, dielectric constant and leakage currents. The observations are correlated with a proposed FE capacitor model. 相似文献
93.
Michael Grätzel 《Journal of Sol-Gel Science and Technology》1994,2(1-3):673-677
Transparent nanocrystalline films of oxide semiconductors such as TiO2 and Fe2O3 have been prepared on a conducting glass support employing a sol-gel procedure. The films are composed of nanometer-sized particles sintered together to allow for percolative charge carrier transport. The internal surface of these films is very high, roughness factors of the order of 1000 being readily obtained. Electric polarization was applied for forward and reverse biasing of the films and the resulting optical changes have been analyzed to derive their flat band potential. Band gap excitation of such nanocrystalline semiconductors produces electron-hole pairs which migrate through the film to be collected as electric current. Steady state photolysis and time resolved laser techniques have been applied to scrutinize the mechanism of light induced charge separation within the nanostructure. When derivatized with a suitable chromophore, TiO2 films give extraordinary efficiencies for the conversion of incident photons into electric current, exceeding 90% for certain transition metal complexes within the wavelength range of their absorption band. The underlying physical principles of these astonishing findings will be discussed. Exploiting this discovery, we have developed a new type of photovoltaic device whose overall light to electric energy conversion yield is 10% under simulated AM 1.5 solar radiation. 相似文献
94.
YBa2Cu3O7-δ and Tl2Ba2CaCu2O8 thin films for microwave filters were synthesized by pulsed laser deposition and the two-step thalliation process. Substrate
quality requirements and the relation of thin film morphology, microstructure with microwave surface resistance were discussed. 相似文献
95.
X.T Zhang Y.C LiuZ.Z Zhi J.Y ZhangY.M Lu D.Z ShenW Xu X.W FanX.G Kong 《Journal of luminescence》2002,99(2):149-154
The properties of the excitonic luminescence for nanocrystalline ZnO thin films are investigated by using the dependence of excitonic photoluminescence (PL) spectra on temperature. The ZnO thin films are prepared by thermal oxidation of ZnS films prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The X-ray diffraction (XRD) indicates that ZnO thin films have a polycrystalline hexagonal wurtzite structure with a preferred (0 0 2) orientation. A strong ultraviolet (UV) emission peak at 3.26 eV is observed, while the deep-level emission band is barely observable at room temperature. The strength of the exciton-longitudinal-optical (LO) phonon coupling is deduced from the temperature dependence of the full-width at half-maximum (FWHM) of the fundamental excitonic peak, decrease in exciton-longitudinal-optical (LO) phonon coupling strength is due to the quantum confinement effect. 相似文献
96.
97.
The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation. 相似文献
98.
反应离子镀光学薄膜的微观结构分析 总被引:2,自引:1,他引:1
用反应离子镀方法制备了TiO2单层膜及TiO2/SiO2多层膜,用透射电子显微镜分别观察了由反应离子镀方法及传统蒸镀法二种不同工艺制得的TiO2单层膜及TiO2/SiO2多层膜的断面结构,并对TiO2单层膜进行了喇曼分析和卢瑟福背散射分析。 相似文献
99.
H. Kuramochi J. Okabayashi F. Takano M. Mizuguchi T. Manago H. Akinaga 《Surface science》2004,550(1-3):192-198
Strong magnetic poles at characteristic rectangular defects have been observed using a magnetic force microscope on a MnAs(
1 0 0) thin film with the thickness of 30 nm. The MnAs thin film was epitaxially grown on a GaAs(0 0 1) substrate. The magnetic poles were in one-arranging direction, being independent of the magnetization direction of the film. The poles were pinned at the edges of the rectangular defects until just below the Curie temperature, and formed a stable magnetic-field loop on the MnAs surface. The stability of the magnetic pole pinning shows the distinctive feature of the magnetic domain structure on the surface with a strong anisotropy, which was built in the heterostructure of MnAs and GaAs. 相似文献
100.
Wenran Feng Chizi Liu Guangliang Chen Guling Zhang Weichao Gu Erwu Niu Si-Ze Yang 《Applied Surface Science》2007,253(11):4923-4927
Hard films prepared by pulsed high energy density plasma (PHEDP) are characterized by high film/substrate adhesive strength, and high wear resistance. Titanium carbonitride (TiCN) films were deposited onto YG11C (ISO G20) cemented carbide cutting tool substrates by PHEDP at room temperature. XRD, XPS, SEM, AES, etc. were adopted to analyze the phases (elements) composition, microstructure and the interface of the films, respectively. The results show that, the uniform dense films are composed of grains ranging from 70 to 90 nm. According to the AES result, there is a broad transition layer between the film and the substrate, due to the ion implantation effect of the PHEDP. The transition layer is favorable for the film/substrate adhesion. 相似文献