基于自适应加速移频的PV孤岛检测与仿真

针对并网光伏(PV)系统的孤岛检测问题,提出一种复合负脉冲电流幅值干扰的自适应加速移频法。基于公共耦合点电压频率朝某个方向的持续变化次数,该方法对频率偏移正反馈系数进行自适应分段调节以加速频率偏移越限,如果变化次数超过12次,且频率仍未越限,则施加持续2个工频周期的负脉冲电流幅值干扰,触发欠压保护,从而检测出孤岛。Matlab仿真表明,与传统的AFD方法相比,该方法不仅对电网谐波影响小,而且孤岛检测盲区小,能有效在高速自动重合闸动作之前使光伏系统与电网解列,具有重要的应用价值。     

Synthesis of new truxene based organic sensitizers for iodine-free dye-sensitized solar cells

Developing arylamine photosensitizers with high extinction coefficients, proper electronic structures, and steric properties is warranted for the dye-sensitized solar cells (DSCs) employing iodine-free redox shuttles. Two new organic sensitizers (M21 and M22) featuring unsymmetrical truxene-based triarylamine donor have been synthesized and compared to its reference sensitizer M4. The effects of unsymmetrical truxene-based triarylamine donors were investigated by their absorption spectra, electrochemical and photovoltaic properties. The incorporation of strong electron donor unit (i.e., dipropylfluorene and 4-methoxybiphenyl) has resulted in an improved light harvesting capacity, and thus photocurrent as well as efficiency of cells. M22 sensitized DSCs employing the Co(II/III)tris(1,10-phenanthroline)-based redox electrolyte affords a short circuit photocurrent of 13.1 mA cm⁻², an open circuit voltage of 861 mV, and a fill factor of 0.70, corresponding to an overall conversion efficiency of 7.89% under standard AM 1.5 sunlight.     

MP-C60(M=Zn,Cu,Co)化合物的合成、表征及光电转换性能研究

采用1,3-偶极环加成反应,合成了共价键连卟啉-富勒烯配体(H2P-C60)及配合物MP-C60(M=Zn,Cu,Co)。利用红外光谱、元素分析、紫外-可见光谱、核磁共振氢谱及质谱等手段对产物进行表征。同时对产物的光电转换性能进行了研究。光伏效应结果表明,产物具有优良的光电转换性能。尤其在O2/H2O介质电对中,光生电压值最大可达到195mV,镀层厚度在1μm时,光伏效应值最大。     

Electrical characteristics of chlorophyll-a polyvinyl alcohol photovoltaic cells

A type of photovoltaic cell was made by sandwiching micro-crystalline chlorophyll-a (chla) layer and polyvinyl alcohol (PVA) film between two semiconductive optical transparent SnO2 electrodes, such as SnO2/chla/PVA/SnO2. The cell showed a dark rectifying effect and presented photovaltaic properties on illumination, which was illustrated by the charge distribution in the cell. It was suggested that the SnO2/chla junction might be responsible for photovaltage and the chla/ PVA for the charge separation upon irradiation of visible light. The equivalent electric circuit was discussed and its e-quivalent component values were calculated.     

Electrochemical, spectroelectrochemical and theoretical studies on the reduction and deprotonation of the photovoltaic sensitizer [(H3-tctpy)Ru(NCS)3] (H3-tctpy=2,2′:6′,2′′-terpyridine-4,4′,4′′-tricarboxylic acid)

The electrochemical reduction of the black dye photosensitizer [(H₃-tctpy)Ru^II(NCS)₃]⁻ (H₃-tctpy=2,2′:6′,2′′-terpyridine-4,4′,4′′-tricarboxylic acid) used in photovoltaic cells has been found to be a complex process when studied in dimethylformamide. At low temperatures, fast scan rates and at a glassy carbon electrode, the chemically reversible ligand based one-electron reduction process [(H₃-tctpy)Ru(NCS)₃]⁻+e⁻[(H₃-tctpy√⁻)Ru(NCS)₃]²⁻ is detected. This process has a reversible half-wave potential (E^r_1/2) of −1585±20 mV versus Fc/Fc⁺ at 25°C. Under other conditions, a deprotonation reaction occurs upon reduction, which produces [(H_3−x-tctpy^x−)Ru(NCS)₃]^(1+x)− and hydrogen gas. Mechanistic pathways giving rise to the final products are discussed. The E^r_1/2-value for the ligand based reductions of the deprotonated complex is 0.70 V more negative than for [(H₃-tctpy)Ru(NCS)₃]⁻. Consequently, data obtained from molecular orbital calculations are consistent with the reaction [(H₃-tctpy)Ru(NCS)₃]⁻+e⁻→[(H₂-tctpy⁻)Ru(NCS)₃]²⁻+1/2H₂ yielding the monodeprotonated complex as the major product obtained after electrochemical reduction of [(H₃-tctpy)Ru(NCS)₃]⁻. The E^r_1/2-values for the metal based Ru^II/III process differ by 0.30 V when data obtained for the protonated and deprotonated forms of the black dye are compared. Electronic spectra obtained during the course of experiments in an optically transparent thin layer electrolysis configuration are consistent with the overall reaction scheme proposed on the basis of voltammetric measurements and molecular orbital calculations. Reduction studies on the free ligand, H₃-tcpy, are consistent with results obtained with [(H₃-tctpy)Ru(NCS)₃]⁻.     

EFFICIENT POLYMER PHOTOVOLTAIC DEVICES BASED ON POLYMER D-A BLENDS*

Recent work demonstrated that efficient solar-energy conversion could be achieved in polymer photovoltaic cells(PVCs) based on interpenetrating bi-continuous networks. In this paper we present a comprehensive study on improvingenergy conversion efficiencies of PVCs based on composite films of MEHPPV and fullerene derivatives. Carrier collectionefficiency of ca. 30% el/ph and energy conversion efficiency of 3.9% were achieved at 500 nm. At reverse bias of 15 V, thephotosensitivity reached 0.8 A/W, corresponding to a quantum efficiency over 100% el/ph. These results suggest that highefficiency photoelectric conversion can be achieved in polymer devices with M-P-M structure. These devices are promisingfor practical applications such as plastic solar cells and plastic photodetectors.     

Photovoltaic devices based on electrodeposited poly(3-methylthiophene) with tin oxide as the transparent electrode

We report on the use of electrodeposited poly(3-methylthiophene) (PMeT) in photovoltaic devices. Photocurrent measurements in devices with PMeT as the active conjugated polymer layer were carried out showing that the combination of Ni and tin oxide (TO) as electrode materials presents advantages relative to Al and TO. The choice of these electrode materials permits the carriers with the lowest mobility, the negative charge carriers, to be collected near the exciton generation/dissociation region, i.e. near the transparent TO electrode, avoiding the tendency for space charge accumulation and consequently the reduction of device efficiency. Electronic Publication     

Fluoropolymer films in the photovoltaic industry

The unique combinations of properties that fluoropolymer exhibit are ideal for photovoltaic modules. Typical modules take advantage of fluoropolymers’ properties in many ways. This brief overview discusses the most common uses of fluoropolymers in the photovoltaic energy industry and some of the reasons behind their popularity.     

BTBPD-PC61BM体系光伏性质的密度泛函理论计算

Designing and fabricating high-performance photovoltaic devices have remained a major challenge in organic solar cell technologies.In this work,the photovoltaic performances of BTBPD-PC₆₁BM system were theoretically investigated by means of density functional theory calculations coupled with the Marcus charge transfer model in order to seek novel photovoltaic systems.Moreover,the hole-transfer properties of BTBPD thin-film were also studied by an amorphous cell with 100 BTBPD molecules.Results revealed that the BTBPDPC₆₁BM system possessed a middle-sized open-circuit voltage of 0.70 V,large short-circuit current density of 16.874 mA/cm²,large fill factor of 0.846,and high power conversion efficiency of 10%.With the Marcus model,the charge-dissociation rate constant was predicted to be as fast as 3.079×10¹³ s^-1 in the BTBPD-PC₆₁BM interface,which was as 3-5 orders of magnitude large as the decay (radiative and non-radiative) rate constant (10⁸-10¹⁰ s^-1),indicating very high charge-dissociation efficiency (～100%) in the BTBPD-PC₆₁BM system.Furthermore,by the molecular dynamics simulation,the hole mobility for BTBPD thin-film was predicted to be as high as 3.970×10^-3 cm²V^-1s^-1,which can be attributed to its tight packing in solid state.     

Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell

To investigate the effect of quantum dot (QD) layers on the photovoltaic process of InAs/GaAs QD solar cell (QDSC), QD layers were embedded in conventional GaAs p-n junction SC (GaAs SC) structures. The photoreflectance (PR) was examined at different temperatures (T) and excitation light intensities (I_ex) to investigate the photovoltaic effects through observation of the Franz-Keldysh oscillations (FKOs) in the PR spectra. The evaluated the p-n junction electric fields (F_pn) of the InAs QDSC was different from that of the GaAs SC. Moreover, InAs QDSC show that the different photovoltaic behaviors compared with GaAs SC by varying I_ex and T. From these considerations, we suggest that the different photovoltaic behaviors are caused by the effect of the additional photo-carrier generation in InAs QD layers resulting in enhancement of the field screening effect in F_pn.