Synthesis and characterization of new HgS nanoparticles prepared by Hg(II)-triazole-3-thiol as precursor

Nine Hg(II) complexes, [Hg(DiphtS)₂(L-L)](2–7) {where, HDiphtS = 4,5-diphenyl-1,2,4-triazole-3-thiol; L-L = bis(diphenylphosphino)ethane (dppe) (2); 1,3-bis(diphenylphosphino)propane (dppp)(3); 1,4-bis(diphenylphosphino)butane (dppb)(4); 1,1′-bis(diphenylphosphino)ferrocene (dppf)(5); 2,2′-bipyridine (Bipy)(6) and 1,10-phenanthroline (Phen)(7) } or [Hg(DiphtS)₂(L)₂] (8–9) {where L = triphenylphosphine (Ph₃P) (8) and triphenylphosphine sulphide (Ph₃PS) (9)}, have been prepared form the reaction of [Hg(DiphtS)₂](1) with phosphine or amine as co-ligands. Then characterized by the IR, NMR (¹H and ³¹P) spectroscopy, elemental analysis, molar conductivity. The results supported the monodentate behaviour of HDiphtS ligand in all complexes (1–9) in anion form through the sulfur atom. Complexes 1, 2 and 6 have been used as single source precursors for the preparation of ethylene-diamine capped HgS-nanoparticles. Powder X-ray diffraction (PXRD), and scanning electron microscopy (SEM), have been used to characterize the HgS nanoparticles.     

Thickness effect on the band gap of magnetron sputtered Pb45Se45O10 thin films on Si

Oxygen doped PbSe thin films with different thickness were grown on the Si (100) substrates by magnetron sputtering, and characterized using scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and physical properties measurement system. As the film thickness increased, the intensity of the (200) PbSe prominent diffraction peak increased, while the (220) peak almost vanished, indicating the primary growth direction. The change rate between the light and dark resistance increased with the film thickness, and the maximum of 64.76% was obtained. According to the density functional theory calculations and the experimental results, the band gap of the PbSe thin films decreased from 0.278 eV to 0.21 eV when doped with oxygen. Doping with oxygen during the deposition process is a viable way to prepare PbSe thin films with a tunable band gap. The band gap increased almost linearly with the lattice constant, confirmed by the calculated and experimental results.     

ZnSe-石墨烯/TiO_2声催化剂上罗丹明B降解与反应氧物种生成(英文)

Nanostructured ZnSe-graphene/TiO2 was synthesized by a hydrothermal-assisted approach. ZnSe-graphene/TiO2 exhibited favorable adsorption of rhodamine B, a wide wavelength absorption range, and efficient charge separation. Reactive oxygen species were generated by the oxidation of 1,5-diphenyl carbazide to 1,5-diphenyl carbazone. The sonocatalytic reaction mechanism was pro-posed. These findings potentially broaden the applications of sonocatalytic technologies.     

CM⁃Phos配体在钯催化交叉偶联反应中的应用

本文综合评述了近年来2-[2-(二环己膦基)苯基]-1-甲基-1H-吲哚(CM-Phos)膦配体及其衍生物在钯催化的交叉偶联反应中的应用, 主要根据不同种类的交叉偶联反应进行系统性分述, 并对该领域的发展前景进行了展望.     

原位制备具有增强光催化活性的S型Bi2Se3/g-C3N4光催化剂

光催化氧化是一种应用前景良好的环境治理技术.与絮凝、物理吸附和化学氧化等常见的方法相比,光催化氧化具有环境友好、氧化完全、方便和廉价等优势.特别是可见光光催化氧化,可利用太阳能中占比最高的可见光,在应用中更具优势.因而,探索可见光响应性能优异的光催化剂一直是光催化氧化领域的一个重要研究内容.硒化铋(Bi₂Se₃)是一种带隙(带隙宽度在0.3~1.3 e V)非常窄的半导体,能吸收全部波长范围的可见光和近红外光.此外,Bi₂Se₃还具有独特的金属表面态,其表面具有良好的导电性.这些特性使其在可见光光催化氧化领域具有很大的应用潜力.然而,由于Bi₂Se₃价带位置高,氧化能力很弱,其价带上的空穴在光催化反应中难以被消耗,导致空穴大量累积,并迅速与光生电子复合,大幅降低了Bi₂Se₃的光催化性能.因此,一直以来,Bi₂Se₃很少被用于光催化反应.如何充分利用Bi₂Se₃的光响应优势,制备出性能优异的光催化剂,仍是具有挑战性和吸引力的研究方向.本文采用预先制备的Bi2O3/g-C₃N₄复合物作为前驱体,通过原位转化的方法,将前驱体置于热的Se蒸汽中,使前驱体上的Bi2O3与Se蒸汽反应,完全转化为Bi₂Se₃纳米颗粒,从而制得Bi₂Se₃/g-C₃N₄复合光催化剂(Bi₂Se₃含量约为4 wt%).透射电镜结果表明,所形成的Bi₂Se₃纳米颗粒较均匀地分布在g-C₃N₄表面.表面功函数分析发现,Bi₂Se₃与g-C₃N₄结合后,它们的费米能级分别由原来的-0.55和-0.18 e V变为平衡时的-0.22 e V,可形成指向g-C₃N₄的内建电场,有利于形成梯型(S型)异质结.在此基础上,能级位移、荧光分析、结构计算和反应自由基测试等结果表明,Bi₂Se₃和g-C₃N₄之间形成了S型异质结.在可见光光催化降解苯酚的实验中,所制备的Bi₂Se₃/g-C₃N₄复合物的光催化活性明显优于单一的Bi₂Se₃和g-C₃N₄.结合比表面、孔结构、光吸收和荧光等对比分析,认为Bi₂Se₃/g-C₃N₄的这种S型异质结构在其光催化活性增强中起到了关键作用.在光照条件下,其g-C₃N₄导带中光生电子向Bi₂Se₃的价带迁移,并与光生空穴复合,从而使Bi₂Se₃导带上可保留更多的高活性光生电子参与光催化反应,由此Bi₂Se₃/g-C₃N₄的光催化活性增强.循环性能测试和光还原实验结果表明,所制备的Bi₂Se₃/g-C₃N₄复合光催化剂具有良好的稳定性.本文工作为高可见光吸收的光催化剂制备和性能增强提供了新途径和新视野.     

Mo掺杂NiMnSe2的制备及其超级电容器性能

成分和结构是影响多元过渡金属硒化物电化学活性的关键因素。适当掺杂其他金属元素可以有效提高电极材料的电化学性能。通过简单的一步水热法,在泡沫镍上制备出了一种无黏结剂的Mo掺杂NiMnSe₂(记作Ni_0.8Mo_0.2MnSe₂)。Mo的少量掺杂为电极材料提供了丰富的反应活性位点,大大提高了NiMnSe₂的电化学性能。在1 A·g^-1时,Ni_0.8Mo_0.2MnSe₂的比容量达到1 404.0 F·g^-1。掺杂Mo显著降低了NiMnSe₂的电荷转移电阻和扩散电阻。组装的混合超级电容器Ni_0.8Mo_0.2MnSe₂//AC (活性炭)比容量达到81.6 F·g^-1,且倍率性能优异。在2 A·g^-1下连续充放电10 000周,容量保持率为95.8%,表现出超高的循环稳定性。混合超级电容器Ni_0.8Mo_0.2MnSe₂//AC在376.6 W·kg^-1的功率密度下,能量密度达25.5 Wh·kg^-1,高于NiMnSe₂//AC (17.3 Wh·kg^-1)。     

Synthesis and characterization of water-soluble palladium(II)-functionalized diphosphine complexes

Water-soluble functionalized bis(phosphine) ligands L (a–h) of the general formula CH₂(CH₂PR₂)₂, where for a: R = (CH₂)₆OH; b–g: R = (CH₂)_nP(O)(OEt)₂, n = 2–6 and n = 8; h: R = (CH₂)₃NH₂ ( Scheme 1), have been prepared photochemically by hydrophosphination of the corresponding 1-alkenes with H₂P(CH₂)₃PH₂. Water-soluble palladium complexes cis-[Pd(L)(OAc)₂] (1–8) were obtained by the reaction of Pd(OAc)₂ with the ligands a–h in a 1:1 mixture of dichloromethane:acetonitrile. The water-soluble phosphine ligands and their palladium complexes were characterized by IR, ¹H and ³¹P NMR. A crystallographic study of complex 1 shows that the Pd(II) ion has a square planar coordination sphere in which the acetate ligands and the diphosphine ligand deviate by less than 0.12 Å from ideal planar.     

有机杂化含Te2^2-／Se3^2-过渡金属化合物的溶剂热合成及晶体结构

本文通过溶剂热法合成了2种新的有机杂化锌碲化物[Zn(dien)2](Te2)(1)和镍硒化物[Ni(dien)2](Se3)(2)(dien=二乙烯三胺),单晶X射线衍射分析结果表明,化合物1属于正交晶系,Cmca空间群,晶胞参数:a=9.212(2),b=10.854(3),c=15.723(4),Z=4。化合物2属于正交晶系,Pna21空间群,晶胞参数:a=18.047(4),b=9.8236(19),c=9.0079(19),Z=4。在两种化合物中,1的阳离子中Zn2 与2个dien螯合形成稍变形的八面体几何构型,阴离子为哑铃型的Te22-。2的阳离子中Ni2 离子与2个dien螯合形成稍变形的八面体几何构型,阴离子为‘V’字型的Se32-。