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91.
Takahiro Gunji Ryosuke Shimano Koji Arimitsu Yoshimoto Abe 《Journal of polymer science. Part A, Polymer chemistry》2006,44(8):2542-2550
Tetraethoxysilane (TEOS) and polyethoxysiloxanes (PEOSs; prepared by the acid‐catalyzed hydrolytic polycondensation of TEOS) were subjected to the sol–gel process in the presence of cetyltrimethylammonium bromide (CTAB), respectively. The PEOSs with Mw 700–26,000, as prepared by sol–gel coating of TEOS and PEOS under various conditions, were used. Uniform and crack‐free thin films of thickness 276–613 nm were prepared by spin‐coating of a PEOS solution containing CTAB. When the coating films were sintered at 400 °C, the combustion of ethoxy groups and CTAB took place to provide porous silica thin films. The structure of the thin films was found to be dependent on the molecular weight of PEOS and the molar ratio of CTAB/Si: lamellar or hexagonal phase was observed for Mw less than 15,000 and for CTAB/Si molar ratios greater than 0.10. Honeycomb structures were observed for Mw less than 5000 and for CTAB/Si molar ratios of 0.15. The honeycomb structure was also observed by atomic force microscopy and transmission electron microscope. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2542–2550, 2006 相似文献
92.
Tungsten trioxide and titanium dioxide thin films were synthesised by pulsed laser deposition. We used for irradiations of oxide targets an UV KrF* (λ = 248 nm, τFWHM ≅ 20 ns, ν = 2 Hz) excimer laser source, at 2 J/cm2 incident fluence value. The experiments were performed in low oxygen pressure. The (0 0 1) SiO2 substrates were heated during the thin film deposition process at temperature values within the 300-500 °C range. The structure and crystalline status of the obtained oxide thin films were investigated by high resolution transmission electron microscopy. Our analyses show that the films are composed by nanoparticles with average diameters from a few to a few tens of nm. Moreover, the films deposited at substrate temperatures higher than 300 °C are crystalline. The tungsten trioxide films consist of a mixture of triclinic and monoclinic phases, while the titanium dioxide films structure corresponds to the tetragonal anatase phase. The oxide films average transmittance in the visible-infrared spectral range is higher than 80%, which makes them suitable for sensor applications. 相似文献
93.
M.M. El-Nahass M.A.M. Seyam H.E.A. El-Sayed A.M. Abd El-Barry 《Applied Surface Science》2006,252(18):6218-6227
Thin films of samples of the glassy SxSe100−x system with 0 ≤ x ≤ 7.28 have been prepared by thermal evaporation technique at room temperature (300 K). X-ray investigations show that the structure of pure selenium (Se) does change seriously by the addition of small amount of sulphur S ≤7.28%. The lattice parameters were determined as a function of sulphur content. Results of differential thermal analysis (DTA) of the glassy compositions of the system SxSe100−x were discussed. The characteristic temperatures (Tg, Tc and Tm) were evaluated. Dark electrical resistivities, ρ, of SxSe100−x thin films with different thicknesses from 100 to 500 nm, were measured in the temperature range from 300 to 423 K. Two distinct linear parts with different activation energies were observed. The variation of electrical resistivity of examined compositions has been discussed as a function of the film thickness, temperature and the sulphur content. The application of Mott model for the phonon assisted hopping of small polarons gave the same two activation energies obtained from the resistivity temperature calculations. 相似文献
94.
Thin films of silicon oxynitride have largely replaced pure silicon oxide films as gate and tunnel oxide films in modern technology due to their superior properties in terms of efficiency as boron barrier, resistance to electrical stress and high dielectric strength. A single chamber system for plasma enhanced chemical vapor deposition was employed to deposit different films of SiOxNyHz with 0.85 < x < 1.91. All films were previously characterized by Rutherford back-scattering and infrared spectroscopy to determine the stoichiometry and the presence of various bonding configurations of constituent atoms. We used X-ray reflectivity to determine the electron density profile across the depth, and we showed that the top layer is densified. Moreover, grazing incidence small-angle X-ray scattering was used to study inhomogeneities (clustering) in the films, and it is shown that plate-like inhomogeneities exist in the top and sphere-like particles at the bottom part of the film. Their shape and size depend on the stoichiometry of the films. 相似文献
95.
R. Cristescu G. Dorcioman E. Axente A. Moldovan T. Kocourek M. Albulescu D. Mihaiescu D.B. Chrisey 《Applied Surface Science》2006,252(13):4647-4651
We report the first successful deposition of triacetate-pullulan polysaccharide thin films by matrix assisted pulsed laser evaporation. We used a KrF* excimer laser source (λ = 248 nm, τ ≈ 20 ns) operated at a repetition rate of 10 Hz. We demonstrated by FTIR that our thin films are composed of triacetate-pullulan maintaining its chemical structure and functionality. The dependence on incident laser fluence of the induced surface morphology is analysed. 相似文献
96.
有机薄膜电致发光器件失效过程的动态观测及分析 总被引:4,自引:0,他引:4
对有机薄膜电致发光器件失效的全过程进行了显微动态观察,发现器件工作时,有机层/金属界面形成的气泡逐渐变大变多,最终导致器件完全失效,气泡不仅含有水汽,还存在大量有机气体。 相似文献
97.
98.
99.
P.M.?Kosaka Y.?Kawano M.C.?Salvadori D.F.S.?PetriEmail author 《Cellulose (London, England)》2005,12(4):351-359
The adsorption of cellulose acetate (CA), cellulose acetate propionate (CAP) and cellulose acetate butyrate (CAB) from solutions
prepared in acetone onto silicon wafers led to ultrathin films, which were characterized by ellipsometry, atomic force microscopy
(AFM) and contact angle measurements. The polysaccharides films were characterized in the air just after their formation and
after annealing at temperatures higher than their glass transition temperature or melt temperature. The films thickness close
to 2 nm and surface roughness did not vary significantly upon annealing. AFM images revealed the presence of small clumps
dispersed on a homogeneous layer, which covered completely the Si wafers. Such topographic details were also observed after
annealing. However, upon annealing the films surfaces changed from hydrophilic to hydrophobic, evidencing molecular re-orientation
at the solid–air interface. The adhesion of bovine serum albumin (BSA) and lipase onto the cellulose esters films was quantified
in order to evaluate the possibility of applying such films as selective support for biomolecules. 相似文献
100.
Ronny Kleinhempel Gunar Kaune Matthias Herrmann Hartmut Kupfer Walter Hoyer Frank Richter 《Mikrochimica acta》2006,156(1-2):61-67
Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy
target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural,
electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition
rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min−1 could be achieved. This corresponds to a static deposition rate of 200 nm min−1. The lowest electrical resistivity of 1.1·10−3 Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency
in the visible range corresponding to extinction coefficients being below 10−2. X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition
mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222)
oriented. Compared to undoped In2O3 all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown
in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress
in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa. 相似文献