光刻技术:发展路径及未来趋势

光刻技术在半导体器件大规模生产中发挥重要作用.今天,多数先进半导体生产都已经应用ArF准分子激光浸润光刻技术.双重图像曝光和侧壁图像转移技术使ArF准分子激光浸润光刻技术延伸到32纳米半节距(HP)器件的制造成为可能.为了制造更小尺寸的器件,必须开发新的制造工艺.极端紫外线光刻是制造22纳米半节距甚至更小尺寸半导体器件的先进下一代光刻技术解决方案.另外,其他技术解决方案,如纳米压印光刻技术和无掩模直描光刻技术等也被考虑用于制造更小节点尺寸的器件,但是目前这些方案仅仅处在研发阶段,而且在现阶段就已经呈现出在大规模生产中的诸多困难.本文从材料的角度对光刻技术进行一个整体描述,并对光刻技术未来趋势进行讨论.     

卟啉类化合物分子光电器件研究进展

分子电子器件是未来分子电路的微电子元件,已成为有机功能纳米材料研究的热点。 卟啉类化合物的π共轭体系表现出的独特光电性能和良好的热稳定性,使其作为光电器件、模拟生物酶、分子识别和传感材料在材料化学、医学、生物化学和分析化学等领域展现出良好的应用前景,由于卟啉分子平面结构的易修饰性,常用卟啉化合物组装单元来构建功能化的卟啉光电器件。 本文综述了卟啉类化合物的特点及其在光电器件中的应用进展。     

聚吡咯/还原氧化石墨烯复合物的合成及电容性能

通过原位聚合方法制备不同配比的聚吡咯/氧化石墨（PPy/GO）复合物,将其用NaBH4还原得到聚吡咯/还原氧化石墨烯(PPy/RGO)复合物,采用X射线衍射、红外光谱和场发射扫描电子显微镜（FESEM）对其结构和形貌进行物理表征。 采用循环伏安、恒电流充放电和交流阻抗等电化学方法系统研究了所制备样品的电化学性能。 实验结果表明,在电流密度为0.5 A/g、吡咯（Py）与GO质量比为95∶5时,得到的复合物还原前后比电容分别可达401.5和314.5 F/g,远高于单纯的GO（34.8 F/g）和PPy（267.5 F/g）。 经过1200圈循环稳定性测试后,PPy/RGO复合物比电容保持了原来的62.5%,与PPy和PPy/GO（电容保持率分别为16.8%和46.4%）相比,PPy/RGO表现出更好的循环稳定性能,有望成为超级电容器电极材料。     

共价键联的多金属氧酸盐/SBA-15介孔杂化材料的电化学性质研究

采用循环伏安法和碳糊电极, 考察了用共缩合法和二次嫁接法合成的多金属氧酸盐(POM)/SBA-15介孔杂化材料的电化学性质以及氧化还原性能. 在乙腈介质和所检测的电势范围内, 溶液中游离的 物种和浸渍负载于介孔氧化硅上的同样POM物种显示两对W^VI单电子氧化还原峰; 共价键联于介孔氧化硅上的 物种也显示两对峰, 但第一对峰的峰电流增大, 还原电位比浸渍样品正移, 表明共价键联的POM不仅能够保持其原有的氧化还原性能, 而且比浸渍负载的POM具有更强的氧化性. 峰流～扫速的关系显示, 在低扫速时, 样品的氧化还原过程是表面控制的; 在高扫速时, 则是扩散控制的. 另外, 钨磷酸盐样品的氧化性大于钨硅酸盐样品; 共缩合法和二次嫁接法合成的样品具有相似的电化学行为.     

基于富勒烯衍生物修饰玻碳电极的DNA电化学传感器

以富勒烯C₆₀, L-苏氨酸及对苯二甲醛为原料, 在氮气保护下反应得到含醛基官能团的2-(4-醛基苯基)-5-(1-羟乙基)富勒烯吡咯烷衍生物(C₆₀-CHO). 将该材料修饰于玻碳电极表面, 并利用醛基与氨基之间温和、高效的缩合反应, 将5-氨基修饰的寡聚核苷酸共价固定到了C₆₀-CHO修饰的玻碳电极表面, 构建了一种新型的电化学DNA传感器. 以[Fe(CN)₆]^3−/4−为电活性探针, 采用电化学阻抗法对转基因植物CaMV35S启动子基因特征片段进行检测. 实验结果表明, 杂交前后的电子传递电阻差值(DR_et)与目标序列浓度对数(lg C_S2)在1.0×10^－13～1.0×10^－9 mol/L浓度范围内呈良好的线性关系, 线性回归方程为DR_et/(10³ Ω)＝3.471 lg (C_S2/mol/L)＋50.425 (r＝0.9977), 检测限为1.5×10⁻¹⁴ mol/L. 杂交特异性实验进一步表明该传感器对完全互补、碱基错配和非互补序列具有良好的识别能力.     

Real‐Time and Broadband Terahertz Wave Scattering Manipulation via Polarization‐Insensitive Conformal Graphene‐Based Coding Metasurfaces

Here, for the first time, the real‐time and broadband manipulation of terahertz (THz) waves are acquired by introducing a multifunctional graphene‐based coding metasurface (GBCM). The designed structure consists of subwavelength patterned graphene units whose operational statuses can be dynamically switched between two digital states of “0” and “1”. By engineering the spatial distribution of chemical potentials across the GBCM, various scattering patterns having single, two, four, and numerous reflection beams are elaborately achieved just within one planar structure. To compute the far‐field pattern of GBCM, an inverse discrete Fourier transform (IDFT) is established, providing a fast and efficient design method. The proposed GBCM provides a low reflection bellow ?10 dB over a broad frequency band ranging from 1 THz to 1.9 THz. In addition, the metasurface retains its low reflection behavior in a wide range of incident wave angles for both TE and TM polarizations. According to conformal invariance of graphene sheets, the stealth property of GBCM is well preserved while wrapping around a curved object. The proposed technique of real‐time scattering manipulation leads to multifunctional THz devices, opening new routes contributing to numerous applications such as imaging and stealth technology.     

并联交错PFC技术在磁体电源中的应用

并联交错功率因数校正(powerfactorcorrection,PFC)具有能减小输入电流纹波,减小电感磁芯尺寸,减小输出电容纹波、功率因数高等优点．针对其优点,考虑将该变换器应用到强磁场中心的超导磁体电源的备用方案中,以弥补现在运行电源体积过大的不足．本文主要介绍了并联交错PFC的工作原理,对其参数进行设计和选型,分析了控制方法,利用SiC器件,搭建了１kW 的实验样机,实验验证了方案的可行性,为下一步超导磁体电源的升级改造提供了理论和工程经验。     

基于石墨烯的光学控制窄带太赫兹开关

本文提出了一种光控太赫兹开关,该开关采用覆盖单层石墨烯的十字金属谐振器超表面。利用石墨烯表面电导率模型和有限元法计算了这种复合结构的光谱特性。模拟结果表明,在0.2 W/mm²的光泵浦后,传输谱（调制深度为36.8%,Q-因子为250）出现了窄带共振衰减现象。另外,这种衰减的调制深度可以通过改变泵浦强度微调节。因此,光学可调谐太赫兹开关的设计将有助于太赫兹通信应用的功能组件开发。     

Spin-polarization and x-ray magnetic circular dichroism in GaAs

The combination of angular spin momentum with electronics is a promising successor to charge-based electronics. The conduction bands in GaAs may become spin-polarized via optical spin pumping, doping with magnetic ions, or induction of a moment with an external magnetic field. We investigated the spin populations in GaAs with x-ray magnetic circular dichroism for each of these three cases. We find strong anti-symmetric lineshapes at the Ga L₃ edge indicating conduction band spin splitting, with differences in line width and amplitude depending on the source of spin polarization.     

All polymer asymmetric Mach-Zehnder interferometer waveguide sensor by imprinting bonding and laser polishing

We present an all polymer asymmetric Mach–Zehnder interferometer(AMZI) waveguide sensor based on imprinting bonding and laser polishing method. The fabrication methods are compatible with high accuracy waveguide sensing structure. The rectangle waveguide structure of this sensor has three sensing surfaces contacting the test media, and its sensing accuracy can be increased 5 times compared with that of one surface sensing structure. An AMZI device structure is designed. The single mode condition, the length of the sensing arm, and the length deviation between the sensing arm and the reference arm are optimized. The length deviation is optimized to be 19.8 μm in a refractive index range between1.470 and 1.545. We fabricate the AMZI waveguide by lithography and wet etching method. The imprinting bonding and laser polishing method is proposed and investigated. The insertion loss is between-80.36 dB and-10.63 dB. The average and linear sensitivity are 768.1 d B/RIU and 548.95 dB/RIU, respectively. And the average and linear detection resolution of the sensor are 1.30×10~(-6) RIU(RIU: refractive index unit) and 1.82×10~(-5) RIU, respectively. This sensor has a fast and cost-effective fabrication process which can be used in the cases of requiring portability and disposability.